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Recommended Methods to Study Resistive Switching Devices

Advanced electronic materials, 2019-01, Vol.5 (1), p.n/a

2019

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SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices

Scientific reports, 2020-02, Vol.10 (1), p.2567-2567, Article 2567

2020

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Crossbar array of selector-less TaOx/TiO2 bilayer RRAM

Microelectronics and reliability, 2015-11, Vol.55 (11), p.2220-2223

2015

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3D resistive RAM cell design for high-density storage class memory—a review

Science China. Information sciences, 2016-06, Vol.59 (6), p.31-51, Article 061403

2016

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Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1348-1352

2020

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Semi-Empirical [Formula Omitted] Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

IEEE transactions on electron devices, 2020-01, Vol.67 (3), p.1348

2020

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Influence of uterine manipulator use on the incidence of lymphovascular propagation in the treatment of endometrial cancer

Minimally invasive therapy and allied technologies, 2023-02, Vol.32 (1), p.12-17

2023

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Vertical GaN Transistor with Semi‐Insulating Channel

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Mitigating Asymmetric Nonlinear Weight Update Effects in Hardware Neural Network Based on Analog Resistive Synapse

IEEE journal on emerging and selected topics in circuits and systems, 2018-03, Vol.8 (1), p.116-124

2018

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Internal current amplification induced by dielectric hole trapping in monolayer MoS 2 transistor

Nanotechnology, 2017-11, Vol.28 (47), p.475204

2017

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Strategy of Mitigating Breakdown Interference and Yield Loss in Crossbar Memory

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6082-6086

2021

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Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor

Nanotechnology, 2017-11, Vol.28 (47), p.475204-475204

2017

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Strong Read and Write Interference Induced by Breakdown Failure in Crossbar Arrays

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5497-5504

2020

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Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

Thin solid films, 2014-08, Vol.565, p.19-24

2014

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Interface engineered HfO2-based 3D vertical ReRAM

Journal of physics. D, Applied physics, 2016-04, Vol.49 (21)

2016

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Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures

Applied surface science, 2014-09, Vol.312, p.112-116

2014

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Methodology for Realizing VMM with Binary RRAM Arrays: Experimental Demonstration of Binarized-ADALINE using OxRAM Crossbar

2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, p.1-5

2020

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Additive Manufacturing in Atomic Layer Processing Mode (Small Methods 5/2022)

Small methods, 2022-05, Vol.6 (5), p.n/a

2022

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Stabilization of the Solid-Electrolyte-Interphase Layer and Improvement of the Performance of Silicon–Graphite Anodes by Nanometer-Thick Atomic-Layer-Deposited ZnO Films

ACS applied nano materials, 2024-08, Vol.7 (16), p.18486-18498

2024

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Interface engineered HfO 2 -based 3D vertical ReRAM

Journal of physics. D, Applied physics, 2016-06, Vol.49 (21), p.215102

2016

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Interface engineered HfO sub(2)-based 3D vertical ReRAM

Journal of physics. D, Applied physics, 2016-06, Vol.49 (21), p.215102-215110

2016

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Additive Manufacturing in Atomic Layer Processing Mode

Small methods, 2022-05, Vol.6 (5), p.e2101546-n/a

2022

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Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current

Journal of crystal growth, 2013-11, Vol.382, p.61-66

2013

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Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes

ACS applied materials & interfaces, 2014-02, Vol.6 (4), p.2486-2492

2014

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Resistive switching in nonplanar HfO2-based structures with variable series resistance

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-01, Vol.33 (1)

2015

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Recommended Methods to Study Resistive Switching Devices

SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices

Crossbar array of selector-less TaOx/TiO2 bilayer RRAM

3D resistive RAM cell design for high-density storage class memory—a review

Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

Semi-Empirical [Formula Omitted] Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

Influence of uterine manipulator use on the incidence of lymphovascular propagation in the treatment of endometrial cancer

Vertical GaN Transistor with Semi‐Insulating Channel

Mitigating Asymmetric Nonlinear Weight Update Effects in Hardware Neural Network Based on Analog Resistive Synapse

Internal current amplification induced by dielectric hole trapping in monolayer MoS 2 transistor

Strategy of Mitigating Breakdown Interference and Yield Loss in Crossbar Memory

Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor

Strong Read and Write Interference Induced by Breakdown Failure in Crossbar Arrays

Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

Interface engineered HfO2-based 3D vertical ReRAM

Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures

Methodology for Realizing VMM with Binary RRAM Arrays: Experimental Demonstration of Binarized-ADALINE using OxRAM Crossbar

Additive Manufacturing in Atomic Layer Processing Mode (Small Methods 5/2022)

Stabilization of the Solid-Electrolyte-Interphase Layer and Improvement of the Performance of Silicon–Graphite Anodes by Nanometer-Thick Atomic-Layer-Deposited ZnO Films

Interface engineered HfO 2 -based 3D vertical ReRAM

Interface engineered HfO sub(2)-based 3D vertical ReRAM

Additive Manufacturing in Atomic Layer Processing Mode

Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current

Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes

Resistive switching in nonplanar HfO2-based structures with variable series resistance

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