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(0 0 1) Exchange-coupled FCC/L1 0 FePt bilayers

Journal of magnetism and magnetic materials, 2010, Vol.322 (13), p.1811-1815

2010

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(0 0 1) Exchange-coupled FCC/L1 sub(0) FePt bilayers

Journal of magnetism and magnetic materials, 2010-07, Vol.322 (13), p.1811-1815

2010

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0.07 um InP HEMT MMIC Technology for G-band Power Amplifiers

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, 2006, p.39-41

2006

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In 0.11 Ga 0.89 N‐based p‐i‐n photodetector

Physica status solidi. C, 2009-06, Vol.6 (S2)

2009

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0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

2003 33rd European Microwave Conference, 2003, p.683-686

2003

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A 0.18 /spl mu/m SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001, p.151-154

2001

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0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.401-404

2012

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A 0.18-μm CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements

Microwave and optical technology letters, 2005-04, Vol.45 (2), p.168-170

2005

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A 0.4-4-Gb/s CMOS quad transceiver cell using on-chip regulated dual-loop PLLs

IEEE journal of solid-state circuits, 2003-05, Vol.38 (5), p.747-754

2003

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A 0.4-4 Gb/s CMOS quad transceiver cell using on-chip regulated dual-loop PLLs

2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302), 2002, p.88-91

2002

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A 0.4-4Gb/s CMOS quad transceiver cell using on-chip regulated dual-loop PLLs

2002

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A 0.4-mW/Gb/s Near-Ground Receiver Front-End With Replica Transconductance Termination Calibration for a 16-Gb/s Source-Series Terminated Transceiver

IEEE journal of solid-state circuits, 2013-03, Vol.48 (3), p.636-648

2013

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A 0.4mW/Gb/s 16Gb/s near-ground receiver front-end with replica transconductance termination calibration

2012 IEEE International Solid-State Circuits Conference, 2012, p.132-134

2012

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0.5 Gy X-ray radiation promotes osteoblast differentiation by Wnt/β-Catenin signaling

Zhong hua yi xue za zhi, 2017-06, Vol.97 (23), p.1820-1825

2017

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A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process

1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, 1991, p.362-365

1991

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A 0.5 nJ/Pixel 4 K H.265/HEVC Codec LSI for Multi-Format Smartphone Applications

IEEE journal of solid-state circuits, 2016-01, Vol.51 (1), p.56-67

2016

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A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process

1991 Symposium on VLSI Technology, 1991, p.29-30

1991

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(In 0.52 Al 0.48 ) 1− x Mn x As diluted magnetic semiconductor grown on InP substrates

Journal of physics. Condensed matter, 2006-01, Vol.18 (1), p.L15-L20

2006

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0.5981 μm Sum Frequency Mixing in KTP Crystal

Chinese physics letters, 1991-04, Vol.8 (4), p.215-217

1991

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A 0.6 Mpc H i structure associated with Stephan’s Quintet

Nature (London), 2022-10, Vol.610 (7932), p.461-466

2022

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A 0.8 μ 100-MHz 2-D DCT core processor

IEEE transactions on consumer electronics, 1994-08, Vol.40 (3), p.703-710

1994

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0.9-V DSP blocks: a 15-ns 4-k SRAM and a 45-ns 16-b multiply/accumulator

IEEE journal of solid-state circuits, 1995-10, Vol.30 (10), p.1136-1140

1995

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0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator

Proceedings of 1994 IEEE GaAs IC Symposium, 1994, p.55-58

1994

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000147 PARTIAL TRACHELECTOMY: A NEW TREATMENT CHOICE FOR PERSISTENT OR RECURRENT HIGH GRADE CERVICAL INTRAEPITHELIAL NEOPLASIA

International journal of gynecological cancer, 2005-09, Vol.15 (Suppl 2), p.92-93

2005

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000209 IMPACT OF FDG-PET ON RECURRENT CERVICAL CANCER

International journal of gynecological cancer, 2005-09, Vol.15 (Suppl 2), p.109-109

2005

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(0 0 1) Exchange-coupled FCC/L1 0 FePt bilayers

(0 0 1) Exchange-coupled FCC/L1 sub(0) FePt bilayers

0.07 um InP HEMT MMIC Technology for G-band Power Amplifiers

In 0.11 Ga 0.89 N‐based p‐i‐n photodetector

0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

A 0.18 /spl mu/m SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications

0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

A 0.18-μm CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements

A 0.4-4-Gb/s CMOS quad transceiver cell using on-chip regulated dual-loop PLLs

A 0.4-4 Gb/s CMOS quad transceiver cell using on-chip regulated dual-loop PLLs

A 0.4-4Gb/s CMOS quad transceiver cell using on-chip regulated dual-loop PLLs

A 0.4-mW/Gb/s Near-Ground Receiver Front-End With Replica Transconductance Termination Calibration for a 16-Gb/s Source-Series Terminated Transceiver

A 0.4mW/Gb/s 16Gb/s near-ground receiver front-end with replica transconductance termination calibration

0.5 Gy X-ray radiation promotes osteoblast differentiation by Wnt/β-Catenin signaling

A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process

A 0.5 nJ/Pixel 4 K H.265/HEVC Codec LSI for Multi-Format Smartphone Applications

A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process

(In 0.52 Al 0.48 ) 1− x Mn x As diluted magnetic semiconductor grown on InP substrates

0.5981 μm Sum Frequency Mixing in KTP Crystal

A 0.6 Mpc H i structure associated with Stephan’s Quintet

A 0.8 μ 100-MHz 2-D DCT core processor

0.9-V DSP blocks: a 15-ns 4-k SRAM and a 45-ns 16-b multiply/accumulator

0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator

000147 PARTIAL TRACHELECTOMY: A NEW TREATMENT CHOICE FOR PERSISTENT OR RECURRENT HIGH GRADE CERVICAL INTRAEPITHELIAL NEOPLASIA

000209 IMPACT OF FDG-PET ON RECURRENT CERVICAL CANCER

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