UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Highly sensitive plasmonic sensor fabricated with multilayer Ag/Si3N4/Au nanostructure for the detection of glucose in glucose/water solutions

Sensors and actuators. A. Physical., 2021-01, Vol.317, p.112430, Article 112430

2021

Volltextzugriff (PDF)

Vacancy-type defects in molecular beam epitaxy low temperature grown GaAs, a positron beam lifetime study

Applied physics letters, 1996-09, Vol.69 (13), p.1867-1869

1996

Volltextzugriff (PDF)

Photocurrent study of molecular beam epitaxy GaAs grown at low temperature

Journal of applied physics, 2000-03, Vol.87 (5), p.2353-2356

2000

Volltextzugriff (PDF)

Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

Applied physics. A, Materials science & processing, 1999-06, Vol.68 (6), p.643-645

1999

Volltextzugriff (PDF)

Infrared measurements in annealed molecular beam epitaxy GaAs grown at low temperature

Applied physics letters, 1995-05, Vol.66 (19), p.2546-2548

1995

Volltextzugriff (PDF)

Effects of growth and postgrowth parameters on the microstructure and copper distribution in Al(Cu)/SiO2 thin films

Journal of electronic materials, 2002, Vol.31 (1), p.L7-L10

2002

Volltextzugriff (PDF)

Positron and electron backscattering from solids

Physical review letters, 1992-06, Vol.68 (26), p.3873-3876

1992

Volltextzugriff (PDF)

Defects and arsenic distribution in low-temperature-grown GaAs

Applied surface science, 1995-01, Vol.85, p.311-314

1995

Volltextzugriff (PDF)

Correlation between arsenic precipitates and vacancy-type defects in low-temperature-grown GaAs

Journal of physics. Condensed matter, 1994-08, Vol.6 (31), p.L455-L460, Article L455

1994

Volltextzugriff (PDF)

Defects in molecular beam epitaxial GaAs grown at low temperatures

Journal of electronic materials, 1994-06, Vol.23 (6), p.519-523

1994

Volltextzugriff (PDF)

Rare gas moderated electrostatic positron beam

Review of scientific instruments, 1991-06, Vol.62 (6), p.1460-1463

1991

Volltextzugriff (PDF)

Depth and radial profiles of defects in Czochralski-grown silicon

Applied physics letters, 1992-10, Vol.61 (16), p.1939-1941

1992

Volltextzugriff (PDF)

Two-dimensional melting of physisorbed submonolayers of argon and nitrogen : a positron annihilation study

Applied Physics A Solids and Surfaces, 1991-04, Vol.52 (4), p.247-254

1991

Volltextzugriff (PDF)

Phase transitions in physisorbed ethane investigated by positron-annihilation spectroscopy

Physical review. B, Condensed matter, 1999-07, Vol.60 (3), p.2057-2063

1999

Volltextzugriff (PDF)

Helium physisorption on internal surfaces of radiation-induced cavities in aluminum: a positron annihilation study

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-05, Vol.56, p.578-581

1991

Volltextzugriff (PDF)

Erratum: ‘‘Infrared measurements in annealed molecular beam epitaxy GaAs grown at low temperature’’ [Appl. Phys. Lett. 66 , 2546 (1995)]

Applied physics letters, 1995-08, Vol.67 (7), p.1036-1036

1995

Volltextzugriff (PDF)

A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy

MRS proceedings, 1992, Vol.262, Article 45

1992

Volltextzugriff (PDF)

Doubly differential positron-backscattering yields

Physical review. B, Condensed matter, 1991-08, Vol.44 (7), p.3486-3489

1991

Volltextzugriff (PDF)

Positron-annihilation study of phase transitions in ethane physisorbed on grafoil

Physical review. B, Condensed matter, 1994-01, Vol.49 (4), p.2821-2824

1994

Volltextzugriff (PDF)

Monoenergetic positron beam, positron lifetime, and Hall-effect measurements in III–V epilayers grown at low temperatures by molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1992, Vol.10 (2), p.788-792

1992

Volltextzugriff (PDF)

Helium Physisorption on Internal Surfaces of Radiation-Induced Cavities in Aluminum: a Positron Annihilation Study

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990-11, Vol.B56-B57 (1), p.578-581

1990

Volltextzugriff (PDF)

Decreasing NF-κB expression enhances odontoblastic differentiation and collagen expression in dental pulp stem cells exposed to inflammatory cytokines

PloS one, 2015, Vol.10 (1), p.e0113334-e0113334

2015

Volltextzugriff (PDF)

Two-dimensional physisorbed N2 on grafoil studied by positron annihilation spectroscopy

Physical review. B, Condensed matter, 1989-03, Vol.39 (7), p.3990-3995

1989

Volltextzugriff (PDF)

Two-dimensional physisorbed N 2 on grafoil studied by positron annihilation spectroscopy

Physical review. B, Condensed matter, 1989-03, Vol.39 (7), p.3990-3995

1989

Volltextzugriff (PDF)

Correction: Decreasing NF-κB Expression Enhances Odontoblastic Differentiation and Collagen Expression in Dental Pulp Stem Cells Exposed to Inflammatory Cytokines

PloS one, 2015-04, Vol.10 (4), p.e0127494-e0127494

2015

Volltextzugriff (PDF)

1 – 25 von 32

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(24)
Mit Volltextzugriff
(29)

Publikationsform

Artikel
(31)
Tagungsberichte
(1)

Sprache

Englisch
(32)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Highly sensitive plasmonic sensor fabricated with multilayer Ag/Si3N4/Au nanostructure for the detection of glucose in glucose/water solutions

Vacancy-type defects in molecular beam epitaxy low temperature grown GaAs, a positron beam lifetime study

Photocurrent study of molecular beam epitaxy GaAs grown at low temperature

Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

Infrared measurements in annealed molecular beam epitaxy GaAs grown at low temperature

Effects of growth and postgrowth parameters on the microstructure and copper distribution in Al(Cu)/SiO2 thin films

Positron and electron backscattering from solids

Defects and arsenic distribution in low-temperature-grown GaAs

Correlation between arsenic precipitates and vacancy-type defects in low-temperature-grown GaAs

Defects in molecular beam epitaxial GaAs grown at low temperatures

Rare gas moderated electrostatic positron beam

Depth and radial profiles of defects in Czochralski-grown silicon

Two-dimensional melting of physisorbed submonolayers of argon and nitrogen : a positron annihilation study

Phase transitions in physisorbed ethane investigated by positron-annihilation spectroscopy

Helium physisorption on internal surfaces of radiation-induced cavities in aluminum: a positron annihilation study

Erratum: ‘‘Infrared measurements in annealed molecular beam epitaxy GaAs grown at low temperature’’ [Appl. Phys. Lett. 66 , 2546 (1995)]

A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy

Doubly differential positron-backscattering yields

Positron-annihilation study of phase transitions in ethane physisorbed on grafoil

Monoenergetic positron beam, positron lifetime, and Hall-effect measurements in III–V epilayers grown at low temperatures by molecular beam epitaxy

Helium Physisorption on Internal Surfaces of Radiation-Induced Cavities in Aluminum: a Positron Annihilation Study

Decreasing NF-κB expression enhances odontoblastic differentiation and collagen expression in dental pulp stem cells exposed to inflammatory cytokines

Two-dimensional physisorbed N2 on grafoil studied by positron annihilation spectroscopy

Two-dimensional physisorbed N 2 on grafoil studied by positron annihilation spectroscopy

Correction: Decreasing NF-κB Expression Enhances Odontoblastic Differentiation and Collagen Expression in Dental Pulp Stem Cells Exposed to Inflammatory Cytokines

Suchergebnisse filtern