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Ga2O3 films for electronic and optoelectronic applications

Journal of applied physics, 1995-01, Vol.77 (2), p.686-693

1995

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Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source

Applied physics letters, 2005-11, Vol.87 (22)

2005

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Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser

IEEE photonics technology letters, 2006-02, Vol.18 (4), p.625-627

2006

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IEEE_Xplore

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

Journal of applied physics, 1992-11, Vol.72 (9), p.4429-4443

1992

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Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Journal of lightwave technology, 2003-04, Vol.21 (4), p.1020-1031

2003

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IEEE_Xplore

Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I. GaAs, GaN, GaP, GaSb and AlGaAs

Applied surface science, 1999-04, Vol.143 (1-4), p.174-182

1999

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Room-temperature lasing action in In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes

Applied physics letters, 1993-04, Vol.62 (17), p.2021-2023

1993

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Small-signal characteristics of bottom-emitting intracavity contacted VCSEL's

IEEE photonics technology letters, 2000-06, Vol.12 (6), p.609-611

2000

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IEEE_Xplore

Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients

Journal of applied physics, 1993-04, Vol.73 (8), p.3716-3724

1993

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High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers

IEEE photonics technology letters, 2001-09, Vol.13 (9), p.924-926

2001

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IEEE_Xplore

GaAs/AlGaAs microdisk lasers

Applied physics letters, 1994-04, Vol.64 (15), p.1911-1913

1994

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High quality AlxGa1-xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

Applied physics letters, 1991-01, Vol.58 (1), p.77-79

1991

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VCSEL beam waists from optical spectra

IEEE photonics technology letters, 2001-06, Vol.13 (6), p.547-549

2001

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IEEE_Xplore

Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions

Journal of applied physics, 1997-06, Vol.81 (11), p.7647-7661

1997

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Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers

Solid-state electronics, 2002-08, Vol.46 (8), p.1247-1249

2002

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Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

Solid-state electronics, 2002-05, Vol.46 (5), p.699-704

2002

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Dissociation energies of acceptor-hydrogen complexes in InP

Applied physics letters, 1992-09, Vol.61 (13), p.1588-1590

1992

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Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries II. InP, InGaAs, InGaAsP, InAs and AlInAs

Applied surface science, 1999-04, Vol.143 (1-4), p.183-190

1999

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Carbon implantation in InP

Applied physics letters, 1989-11, Vol.55 (19), p.2014-2016

1989

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Strain compensated InGaAs-GaAsP-InGaP laser

IEEE photonics technology letters, 1996-07, Vol.8 (7), p.852-854

1996

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IEEE_Xplore

Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

Applied physics letters, 1990-06, Vol.56 (26), p.2654-2656

1990

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Characterization and annealing of Eu-doped GaN

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-04, Vol.81 (1), p.150-152

2001

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Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures

Applied physics letters, 1990-03, Vol.56 (13), p.1251-1253

1990

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Nonlinear spectroscopy near half-gap in bulk and quantum well GaAs/AlGaAs waveguides

Journal of applied physics, 1992, Vol.71 (4), p.1927-1935

1992

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Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs

IEEE electron device letters, 1998-08, Vol.19 (8), p.309-311

1998

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IEEE_Xplore

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Ga2O3 films for electronic and optoelectronic applications

Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source

Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I. GaAs, GaN, GaP, GaSb and AlGaAs

Room-temperature lasing action in In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes

Small-signal characteristics of bottom-emitting intracavity contacted VCSEL's

Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients

High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers

GaAs/AlGaAs microdisk lasers

High quality AlxGa1-xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

VCSEL beam waists from optical spectra

Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions

Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers

Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

Dissociation energies of acceptor-hydrogen complexes in InP

Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries II. InP, InGaAs, InGaAsP, InAs and AlInAs

Carbon implantation in InP

Strain compensated InGaAs-GaAsP-InGaP laser

Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

Characterization and annealing of Eu-doped GaN

Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures

Nonlinear spectroscopy near half-gap in bulk and quantum well GaAs/AlGaAs waveguides

Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs

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