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547-GHz ft In0.7Ga0.3As-In0.52Al0.48As HEMTs with reduced source and drain resistance

IEEE electron device letters, 2004-05, Vol.25 (5), p.241

2004

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Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

IEEE electron device letters, 2001-08, Vol.22 (8), p.367-369

2001

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Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

IEEE electron device letters, 2001-11, Vol.22 (11), p.507-509

2001

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Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2842-2846

2006

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Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

Applied physics letters, 2004-11, Vol.85 (18), p.4043-4045

2004

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Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

Solid-state electronics, 2006-06, Vol.50 (6), p.1137-1140

2006

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Highly uniform and high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Applied physics letters, 1997-10, Vol.71 (14), p.2005-2007

1997

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Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz

IEEE electron device letters, 2002-10, Vol.23 (10), p.573

2002

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1.3 μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (22 1)A InP substrates by molecular beam epitaxy

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1-2), p.346-349

2006

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Much improved self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy

Journal of physics. Conference series, 2006-05, Vol.38 (1), p.99

2006

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Much improved flat interfaces of InGaAs∕AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2005-05, Vol.23 (3), p.1158-1161

2005

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Photoreflectance characterization of GaAs/AlAs quantum wells with [formula omitted] super-flat interfaces grown by molecular beam epitaxy

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.722-726

2004

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Room temperature lasing of quantum wire VCSELs by optical pumping grown on the [formula omitted]B GaAs substrates by MBE

Physica. E, Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2), p.892-895

2002

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Cathodoluminescence properties of GaAs/AlGaAs pyramidal cap structures with high spatial resolution

Physica status solidi. C, 2006-11, Vol.3 (10), p.3553-3556

2006

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In0.15Ga0.85As/GaAs quantum wire structures grown on (5 5 3)B GaAs substrates by molecular beam epitaxy

Journal of crystal growth, 1999-05, Vol.201-202, p.824-827

1999

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Resonant excitation and anti-Stokes luminescence of GaAs single quantum dots

Journal of luminescence, 2001-12, Vol.94, p.143-146

2001

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Cyclotron resonance of ultrashort-period lateral superlattices

Solid state communications, 2003-09, Vol.127 (9), p.671-675

2003

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547-GHz $f_t$ In $_0.7$ Ga $_0.3$ As–In $_0.52$ Al $_0.48$ As HEMTs With Reduced Source and Drain Resistance

IEEE electron device letters, 2004-05, Vol.25 (5), p.241-243

2004

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Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 2001-10, Vol.40 (10A), p.L1058-L1060

2001

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Confined Multiexciton States of GaAs/AlGaAs Quantum Dots Grown on a (411)A GaAs Surface

Physica status solidi. B. Basic research, 2001-03, Vol.224 (2), p.353-356

2001

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Cyclotron resonance in corrugated lateral superlattices

Physica. E, Low-dimensional systems & nanostructures, 2004-04, Vol.22 (1), p.648-651

2004

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Novel asymmetric gate-recess engineering for sub-millimeter-wave InP-based HEMTs

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2001, Vol.3, p.2159-2162 vol.3

2001

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GaAs/Al0.4Ga0.6As triple barrier resonant tunneling diodes with (411)A super-flat interfaces grown by MBE

Journal of crystal growth, 1999-05, Vol.201-202, p.773-777

1999

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Correction to "Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency"

IEEE electron device letters, 2002-02, Vol.23 (2), p.105-105

2002

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Breakdown of the quantum Hall effect due to electron heating

Solid state communications, 1985-01, Vol.54 (6), p.479-484

1985

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547-GHz ft In0.7Ga0.3As-In0.52Al0.48As HEMTs with reduced source and drain resistance

Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates

Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

Highly uniform and high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz

1.3 μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (22 1)A InP substrates by molecular beam epitaxy

Much improved self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy

Much improved flat interfaces of InGaAs∕AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy

Photoreflectance characterization of GaAs/AlAs quantum wells with [formula omitted] super-flat interfaces grown by molecular beam epitaxy

Room temperature lasing of quantum wire VCSELs by optical pumping grown on the [formula omitted]B GaAs substrates by MBE

Cathodoluminescence properties of GaAs/AlGaAs pyramidal cap structures with high spatial resolution

In0.15Ga0.85As/GaAs quantum wire structures grown on (5 5 3)B GaAs substrates by molecular beam epitaxy

Resonant excitation and anti-Stokes luminescence of GaAs single quantum dots

Cyclotron resonance of ultrashort-period lateral superlattices

547-GHz $f_t$ In $_0.7$ Ga $_0.3$ As–In $_0.52$ Al $_0.48$ As HEMTs With Reduced Source and Drain Resistance

Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

Confined Multiexciton States of GaAs/AlGaAs Quantum Dots Grown on a (411)A GaAs Surface

Cyclotron resonance in corrugated lateral superlattices

Novel asymmetric gate-recess engineering for sub-millimeter-wave InP-based HEMTs

GaAs/Al0.4Ga0.6As triple barrier resonant tunneling diodes with (411)A super-flat interfaces grown by MBE

Correction to "Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency"

Breakdown of the quantum Hall effect due to electron heating

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