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Bandgap engineering of two-dimensional semiconductor materials

NPJ 2D materials and applications, 2020-08, Vol.4 (1), Article 29

2020

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Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Journal of applied physics, 2014-07, Vol.116 (1)

2014

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Surface passivation and implications on high mobility channel performance (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1544-1549

2009

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GaAs interfacial self-cleaning by atomic layer deposition

Applied physics letters, 2008-02, Vol.92 (7), p.071901-071901-3

2008

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Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

Applied physics letters, 2008-11, Vol.93 (20)

2008

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A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Microelectronic engineering, 2004-04, Vol.72 (1-4), p.257-262

2004

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Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors

Applied physics letters, 2013-04, Vol.102 (13)

2013

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Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

Applied physics letters, 2011-10, Vol.99 (17)

2011

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The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

Applied physics letters, 2009-10, Vol.95 (15), p.151905-151905-3

2009

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In situ surface pre-treatment study of GaAs and In0.53Ga0.47As

Applied physics letters, 2012-04, Vol.100 (15)

2012

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Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

Applied physics letters, 2007-10, Vol.91 (16)

2007

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Indium stability on InGaAs during atomic H surface cleaning

Applied physics letters, 2008-04, Vol.92 (17), p.171906-171906-3

2008

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Chemical and electrical characterization of the HfO2/InAlAs interface

Journal of applied physics, 2013-09, Vol.114 (10)

2013

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Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics

Applied physics letters, 2008-09, Vol.93 (11)

2008

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A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Applied surface science, 2004-07, Vol.234 (1-4), p.429-433

2004

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Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1083-1086

2011

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Formation of pre-silicide layers below Ni1−xPtxSi/Si interfaces

Acta materialia, 2013-04, Vol.61 (7), p.2481-2488

2013

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Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

Applied physics letters, 2010-03, Vol.96 (10)

2010

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In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

Applied physics letters, 2011-07, Vol.99 (4)

2011

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In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

Journal of applied physics, 2013-10, Vol.114 (15)

2013

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Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Microelectronic engineering, 2004-04, Vol.72 (1), p.304-309

2004

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Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Applied surface science, 2004-07, Vol.234 (1-4), p.240-245

2004

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Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

Current opinion in solid state & materials science, 2011-10, Vol.15 (5), p.188-207

2011

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Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Radiation physics and chemistry (Oxford, England : 1993), 2006-11, Vol.75 (11), p.2097-2101

2006

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Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

Applied physics letters, 2009-04, Vol.94 (16)

2009

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Bandgap engineering of two-dimensional semiconductor materials

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Surface passivation and implications on high mobility channel performance (Invited Paper)

GaAs interfacial self-cleaning by atomic layer deposition

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors

Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

In situ surface pre-treatment study of GaAs and In0.53Ga0.47As

Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

Indium stability on InGaAs during atomic H surface cleaning

Chemical and electrical characterization of the HfO2/InAlAs interface

Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

Formation of pre-silicide layers below Ni1−xPtxSi/Si interfaces

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

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