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Oxidative enzyme activation of cellulose substrates for surface modification

Green chemistry : an international journal and green chemistry resource : GC, 2022-05, Vol.24 (1), p.426-44

2022

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Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

MRS bulletin, 2009-07, Vol.34 (7), p.485-492

2009

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.547-556

2008

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Authentic leadership and flourishing: Do trust in the organization and organizational support matter during times of uncertainty?

Frontiers in psychology, 2022-09, Vol.13, p.955300-955300

2022

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Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

Chemical communications (Cambridge, England), 2015-11, Vol.51 (86), p.15692-15695

2015

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Social wellbeing profiles: associations with trust in managers and colleagues, job satisfaction, and intention to leave

Frontiers in psychology, 2024-06, Vol.15, p.1157847

2024

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Switching mechanism in two-terminal vanadium dioxide devices

Nanotechnology, 2015-04, Vol.26 (16), p.165202-165202

2015

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Reduced Target-Resolution Strategy for Rapid Multi-Observer Site Location Optimisation

IEEE access, 2020, Vol.8, p.203252-203269

Heyns, Andries M.

2020

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Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature

The Journal of chemical physics, 2019-03, Vol.150 (10), p.104703-104703

2019

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Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Thin solid films, 2012-02, Vol.520 (8), p.3211-3215

2012

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Authentic Leadership, Trust (in the Leader), and Flourishing: Does Precariousness Matter?

Frontiers in psychology, 2022-04, Vol.13, p.798759-798759

2022

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Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

IEEE electron device letters, 2008-12, Vol.29 (12), p.1398-1401

2008

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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Applied physics letters, 2011-10, Vol.99 (15), p.152103-152103-3

2011

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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Journal of the Electrochemical Society, 2008, Vol.155 (7), p.H552

2008

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Auroral, Ionospheric and Ground Magnetic Signatures of Magnetopause Surface Modes

Journal of geophysical research. Space physics, 2023-03, Vol.128 (3), p.n/a

2023

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Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms

npj quantum information, 2022-08, Vol.8 (1), p.1-7, Article 93

2022

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Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

Applied physics letters, 2008-10, Vol.93 (16)

2008

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Social well-being, job satisfaction, organisational citizenship behaviour and intentions to leave in a utility organisation

SA Journal of Industrial Psychology, 2022, Vol.48 (1), p.1-11

2022

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Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

Journal of applied physics, 2014-01, Vol.115 (2)

2014

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Positive non-linear capacitance: the origin of the steep subthreshold-slope in ferroelectric FETs

Scientific reports, 2019-10, Vol.9 (1), p.14957-9, Article 14957

2019

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Optimisation of surveillance camera site locations and viewing angles using a novel multi-attribute, multi-objective genetic algorithm: A day/night anti-poaching application

Computers, environment and urban systems, 2021-07, Vol.88, p.101638, Article 101638

Heyns, Andries M.

2021

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Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature

The Journal of chemical physics, 2019-03, Vol.150 (10), p.104703

2019

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Drive current enhancement in p-tunnel FETs by optimization of the process conditions

Solid-state electronics, 2011-11, Vol.65-66, p.28-32

2011

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Strain coupling optimization in magnetoelectric transducers

Microelectronic engineering, 2018-02, Vol.187-188, p.144-147

2018

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High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2503-2511

2007

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Oxidative enzyme activation of cellulose substrates for surface modification

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Authentic leadership and flourishing: Do trust in the organization and organizational support matter during times of uncertainty?

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

Social wellbeing profiles: associations with trust in managers and colleagues, job satisfaction, and intention to leave

Switching mechanism in two-terminal vanadium dioxide devices

Reduced Target-Resolution Strategy for Rapid Multi-Observer Site Location Optimisation

Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Authentic Leadership, Trust (in the Leader), and Flourishing: Does Precariousness Matter?

Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Auroral, Ionospheric and Ground Magnetic Signatures of Magnetopause Surface Modes

Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms

Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

Social well-being, job satisfaction, organisational citizenship behaviour and intentions to leave in a utility organisation

Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

Positive non-linear capacitance: the origin of the steep subthreshold-slope in ferroelectric FETs

Optimisation of surveillance camera site locations and viewing angles using a novel multi-attribute, multi-objective genetic algorithm: A day/night anti-poaching application

Chemical vapor deposition of monolayer-thin WS 2 crystals from the WF 6 and H 2 S precursors at low deposition temperature

Drive current enhancement in p-tunnel FETs by optimization of the process conditions

Strain coupling optimization in magnetoelectric transducers

High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

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