UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Cu passivation for integration of gap-filling ultralow-k dielectrics

Applied physics letters, 2016-12, Vol.109 (23)

2016

Volltextzugriff (PDF)

Influence of absorbed water components on SiOCH low- k reliability

Journal of applied physics, 2008-08, Vol.104 (3), p.034113-034113-6

2008

Volltextzugriff (PDF)

A Thermally Stable and High-Performance 90-nm \backslash-Based 1T1R CBRAM Cell

IEEE transactions on electron devices, 2013-11, Vol.60 (11), p.3690-3695

2013

Volltextzugriff (PDF)

Chemical mechanical polishing for indium bond pad damascene processing

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.03SP39

2024

Volltextzugriff (PDF)

Advanced Organic Polymer for the Aggressive Scaling of Low-$k$ Materials

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DB01-04DB01-5

2011

Volltextzugriff (PDF)

W versus Co--Al as Gate Fill-Metal for Aggressively Scaled Replacement High-$k$/Metal Gate Devices for (Sub-)22 nm Technology Nodes

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CA03-04CA03-6

2013

Volltextzugriff (PDF)

A Thermally Stable and High-Performance 90-nm Al2O3\Cu-Based 1T1R CBRAM Cell

IEEE transactions on electron devices, 2013-11, Vol.60 (11), p.3690-3695

2013

Volltextzugriff (PDF)

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

ACS applied materials & interfaces, 2016-10, Vol.8 (39), p.26119-26125

2016

Volltextzugriff (PDF)

Ruthenium metallization for advanced interconnects

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, p.34-36

2016

Volltextzugriff (PDF)

Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora ® LK HM

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

Volltextzugriff (PDF)

Dielectric Reliability of 50 nm Half Pitch Structures in Aurora ® LK

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

Volltextzugriff (PDF)

Integration of Porogen-Based Low-$k$ Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-$k$ Damage and Reliability

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05FD03-05FD03-4

2010

Volltextzugriff (PDF)

Integration of porous low-k dielectrics using post porosity pore protection

Journal of physics. D, Applied physics, 2016-12, Vol.49 (50), p.505105

2016

Volltextzugriff (PDF)

Integration of a templated directed self-assembly-based hole shrink in a short loop via chain

Journal of micro/nanolithography, MEMS, and MOEMS, 2016-10, Vol.15 (4), p.43505

2016

Volltextzugriff (PDF)

Full reliability study of advanced metallization options for 30 nm A12pitch interconnects

Microelectronic engineering, 2013-06, Vol.106, p.210-213

2013

Volltextzugriff (PDF)

Full reliability study of advanced metallization options for 30nm ½pitch interconnects

Microelectronic engineering, 2013-06, Vol.106, p.210-213

2013

Volltextzugriff (PDF)

A Static Model for Scratches Generated during Aluminum Chemical-Mechanical Polishing Process: Orbital Technology

Japanese Journal of Applied Physics, 1999-04, Vol.38 (4R), p.1932

1999

Volltextzugriff (PDF)

Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding

2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 2020, p.216-222

2020

Volltextzugriff (PDF)

High-Aspect-Ratio Ruthenium Lines for Buried Power Rail

2018 IEEE International Interconnect Technology Conference (IITC), 2018, p.4-6

2018

Volltextzugriff (PDF)

Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-$k$ Last Replacement Metal Gate Technology

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CA02-04CA02-7

2013

Volltextzugriff (PDF)

Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-silicon via interconnects

2012 IEEE 62nd Electronic Components and Technology Conference, 2012, p.822-826

2012

Volltextzugriff (PDF)

Thermal and plasma treatments for improved (sub-)1nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme

Japanese Journal of Applied Physics, 2014, Vol.53 (4S), p.04EA04-1-04EA04-7

2014

Volltextzugriff (PDF)

Advanced Organic Polymer for the Aggressive Scaling of Low- k Materials

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

Volltextzugriff (PDF)

Reduced resistivity of NiAl by backthinning for advanced interconnect metallization

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM), 2023, p.1-3

2023

Volltextzugriff (PDF)

1 – 25 von 53

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(25)
Mit Volltextzugriff
(38)

Publikationsform

Artikel
(29)
Tagungsberichte
(24)

Sprache

Englisch
(53)
Japanisch
(14)
Deutsch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(34)
Physical Sciences
(18)
Technology
(18)
Engineering
(16)
Engineering, Electrical & Electronic
(15)
Physics
(15)
Physics, Applied
(14)
Materials Science
(7)
Metallization
(7)
Dielectrics
(6)
Materials Science, Multidisciplinary
(6)
Bonding
(5)
Electromigration
(5)
General Physics And Astronomy
(5)
Through-Silicon Vias
(5)
Annealing
(4)
Conferences
(4)
Copper
(4)
Electronics
(4)
General Engineering
(4)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Cu passivation for integration of gap-filling ultralow-k dielectrics

Influence of absorbed water components on SiOCH low- k reliability

A Thermally Stable and High-Performance 90-nm \backslash-Based 1T1R CBRAM Cell

Chemical mechanical polishing for indium bond pad damascene processing

Advanced Organic Polymer for the Aggressive Scaling of Low-$k$ Materials

W versus Co--Al as Gate Fill-Metal for Aggressively Scaled Replacement High-$k$/Metal Gate Devices for (Sub-)22 nm Technology Nodes

A Thermally Stable and High-Performance 90-nm Al2O3\Cu-Based 1T1R CBRAM Cell

Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

Ruthenium metallization for advanced interconnects

Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora ® LK HM

Dielectric Reliability of 50 nm Half Pitch Structures in Aurora ® LK

Integration of Porogen-Based Low-$k$ Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-$k$ Damage and Reliability

Integration of porous low-k dielectrics using post porosity pore protection

Integration of a templated directed self-assembly-based hole shrink in a short loop via chain

Full reliability study of advanced metallization options for 30 nm A12pitch interconnects

Full reliability study of advanced metallization options for 30nm ½pitch interconnects

A Static Model for Scratches Generated during Aluminum Chemical-Mechanical Polishing Process: Orbital Technology

Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding

High-Aspect-Ratio Ruthenium Lines for Buried Power Rail

Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-$k$ Last Replacement Metal Gate Technology

Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-silicon via interconnects

Thermal and plasma treatments for improved (sub-)1nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme

Advanced Organic Polymer for the Aggressive Scaling of Low- k Materials

Reduced resistivity of NiAl by backthinning for advanced interconnect metallization

Suchergebnisse filtern