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Infrared spectroscopic analysis of an ordered Si/SiO2 interface

Applied physics letters, 2004-01, Vol.84 (4), p.493-495

2004

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IBMM of OH adsorbates and interphases on Si-based materials

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-02, Vol.272, p.330-333

2012

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Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements

AIP conference proceedings, 2011, Vol.1336 (1)

2011

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The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1 × 1) Si(100)

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-12, Vol.87 (3), p.303-316

2001

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H-passivation of Si(100) By Wet Chemical Cleaning: Discovery of Ordering

MRS proceedings, 1998, Vol.513, Article 399

1998

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New SiGe dielectrics grown at room temperature by low-energy ion beam oxidation and nitridation

Applied physics letters, 1991-10, Vol.59 (16), p.2031-2033

1991

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Characterization of carbon in heteroepitaxial Si1 − x − yGexCy thin films via combined ion channeling and nuclear resonance analysis

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-09, Vol.118 (1-4), p.88-96

1996

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Hydrogen passivation of Si(100) wafers as templates for low temperature ( T < 600°C) epitaxy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-09, Vol.118 (1), p.144-150

1996

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Kinetics of ion beam nitridation (IBN) of Si and of MBE-grown Ge and SixGe1−x alloys: The role of ion energy, ion dose and substrate temperature

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-04, Vol.67 (1-4), p.301-307

1992

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Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealing

IEEE transactions on electron devices, 1990-01, Vol.37 (1), p.183-190

1990

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Atomic displacement free interfaces and atomic registry in SiO2∕(1×1) Si(100)

Journal of applied physics, 2006-11, Vol.100 (10)

2006

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Role of ion energy in ion beam oxidation of semiconductors: Experimental study and model

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1992-07, Vol.10 (4), p.713-718

1992

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Stability of C49 and C54 phases of TiSi2 under ion bombardment

Journal of applied physics, 1991-09, Vol.70 (5), p.2660-2666

1991

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Ion beam oxidation of GaAs: The role of ion energy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1991-05, Vol.9 (3), p.1035-1039

1991

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Atomic displacement free interfaces and atomic registry in Si O 2 ∕ ( 1 × 1 ) Si(100)

Journal of applied physics, 2006-11, Vol.100 (10), p.104109-104109-4

2006

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Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon

Journal of materials research, 1993-09, Vol.8 (9), p.2305-2309

1993

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Atomic displacement free interfaces and atomic registry in SiO{sub 2}/(1x1) Si(100)

Journal of applied physics, 2006-11, Vol.100 (10)

2006

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Long Range Order in Ultra-Thin SiO2 Grown on Ordered Si(100)

MRS proceedings, 1999, Vol.567

1999

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Discovery of Long Range Order in Thin (2-20 NM) SiO2 Films by Ion Beam Analysis

MRS proceedings, 1998, Vol.510

1998

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Comparison and Reproducibility of H-Passivation of Si(100) with HF in Methanol, Ethanol, Isopropanol and Water by IBA, TMAFM, and FTIR

MRS proceedings, 1997, Vol.477, Article 281

1997

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Low-temperature epitaxy of Si and Ge by direct ion beam deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1987-07, Vol.5 (4), p.2135-2139

1987

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Damage to Crystalline Silicon Following Implantation by Low Energy Silicon Ions

MRS proceedings, 1992, Vol.262, Article 1037

1992

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Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam deposition

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1987, Vol.19, p.975-982

1987

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Ion beam deposition in materials research

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-02, Vol.37, p.16-21

1989

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Heteroepitaxial properties of Si1−x−yGexCy on Si(100) grown by combined ion- and molecular-beam deposition

Journal of applied physics, 1997-04, Vol.81 (7), p.3081-3091

1997

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Infrared spectroscopic analysis of an ordered Si/SiO2 interface

IBMM of OH adsorbates and interphases on Si-based materials

Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements

The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1 × 1) Si(100)

H-passivation of Si(100) By Wet Chemical Cleaning: Discovery of Ordering

New SiGe dielectrics grown at room temperature by low-energy ion beam oxidation and nitridation

Characterization of carbon in heteroepitaxial Si1 − x − yGexCy thin films via combined ion channeling and nuclear resonance analysis

Hydrogen passivation of Si(100) wafers as templates for low temperature ( T < 600°C) epitaxy

Kinetics of ion beam nitridation (IBN) of Si and of MBE-grown Ge and SixGe1−x alloys: The role of ion energy, ion dose and substrate temperature

Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealing

Atomic displacement free interfaces and atomic registry in SiO2∕(1×1) Si(100)

Role of ion energy in ion beam oxidation of semiconductors: Experimental study and model

Stability of C49 and C54 phases of TiSi2 under ion bombardment

Ion beam oxidation of GaAs: The role of ion energy

Atomic displacement free interfaces and atomic registry in Si O 2 ∕ ( 1 × 1 ) Si(100)

Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon

Atomic displacement free interfaces and atomic registry in SiO{sub 2}/(1x1) Si(100)

Long Range Order in Ultra-Thin SiO2 Grown on Ordered Si(100)

Discovery of Long Range Order in Thin (2-20 NM) SiO2 Films by Ion Beam Analysis

Comparison and Reproducibility of H-Passivation of Si(100) with HF in Methanol, Ethanol, Isopropanol and Water by IBA, TMAFM, and FTIR

Low-temperature epitaxy of Si and Ge by direct ion beam deposition

Damage to Crystalline Silicon Following Implantation by Low Energy Silicon Ions

Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam deposition

Ion beam deposition in materials research

Heteroepitaxial properties of Si1−x−yGexCy on Si(100) grown by combined ion- and molecular-beam deposition

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