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Optical properties of gallium oxide thin films

Applied physics letters, 2002-07, Vol.81 (2), p.250-252

2002

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Phase relations and optical properties of semiconducting ternary sulfides in the system Cu–Sn–S

The Journal of physics and chemistry of solids, 2003-09, Vol.64 (9), p.1859-1862

2003

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Wet-chemical preparation and spectroscopic characterization of Si interfaces

Applied surface science, 2004-08, Vol.235 (3), p.322-339

2004

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Spectroscopic investigations of hydrogen termination, oxide coverage, roughness, and surface state density of silicon during native oxidation in air

Applied surface science, 2002-12, Vol.202 (3), p.199-205

2002

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Optical properties of ZnO thin films: Ion layer gas reaction compared to sputter deposition

Applied physics letters, 2002-05, Vol.80 (19), p.3518-3520

2002

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Wet-chemical passivation and characterization of silicon interfaces for solar cell applications

Solar energy materials and solar cells, 2004-07, Vol.83 (4), p.331-346

2004

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Interband optical properties of higher manganese silicide thin films

Applied physics letters, 2002-07, Vol.81 (4), p.649-651

2002

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Electronic and related properties of crystalline semiconducting iron disilicide

Journal of applied physics, 1996-05, Vol.79 (10), p.7708-7712

1996

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Wet-chemical passivation of Si(111)- and Si(100)-substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-04, Vol.73 (1), p.178-183

2000

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Ellipsometric comparison of the native oxides of silicon and semiconducting iron disilicide (β-FeSi 2)

Surface science, 2000-08, Vol.462 (1), p.143-150

2000

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Growth and morphological properties of β-FeSi2 layers

Applied surface science, 2005-05, Vol.244 (1-4), p.326-329

2005

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Exciton absorption in β-FeSi2 epitaxial films

Applied physics letters, 1999-02, Vol.74 (7), p.970-972

1999

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Theoretical and experimental study of interband optical transitions in semiconducting iron disilicide

Journal of applied physics, 1998-04, Vol.83 (8), p.4410-4414

1998

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Optical investigations of β-FeSi2 with and without Cr addition

Journal of applied physics, 2001-11, Vol.90 (10), p.5018-5026

2001

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Optical interband spectra and band structure of Ru2Si3 and Ru2Ge3

Thin solid films, 2000-03, Vol.364 (1-2), p.171-176

2000

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Excitonic transitions in β-FeSi2 epitaxial films and single crystals

Journal of applied physics, 2004-03, Vol.95 (5), p.2441-2447

2004

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H-terminated silicon: spectroscopic ellipsometry measurements correlated to the surface electronic properties

Thin solid films, 1998-02, Vol.313 (1-2), p.552-556

1998

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Structural, electronic and optical properties of semiconducting rhenium silicide

Journal of physics. Condensed matter, 2004-01, Vol.16 (3), p.303-312

2004

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Structural, electronic, and optical properties of β − ( Fe 1 − x Co x ) Si 2

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (11), Article 115204

2004

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Preparation and properties of thin polycrystalline MnSi1.73 films

Applied surface science, 1996-09, Vol.104-105, p.679-684

1996

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Application of UV-VIS and FTIR Spectroscopic Ellipsometry to the Characterization of Wet-Chemically Treated Si Surfaces

Physica status solidi. A, Applied research, 1999-09, Vol.175 (1), p.121-128

1999

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Electronic and optical properties of semiconducting iron disilicide

Journal of luminescence, 1998-12, Vol.80 (1), p.479-484

1998

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Optical characterization of Ru2Si3 by spectroscopic ellipsometry, UV-VIS-NIR spectroscopy and band structure calculations

Thin solid films, 1998-02, Vol.313-314, p.218-221

1998

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Characterization of chemically prepared Si-surfaces by uv-vis and IR spectroscopic ellipsometry and surface photovoltage

Surface science, 1997-10, Vol.388 (1), p.15-23

1997

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Initial stages of microcrystalline silicon film growth

Journal of non-crystalline solids, 1996-05, Vol.198, p.1012-1016

1996

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Optical properties of gallium oxide thin films

Phase relations and optical properties of semiconducting ternary sulfides in the system Cu–Sn–S

Wet-chemical preparation and spectroscopic characterization of Si interfaces

Spectroscopic investigations of hydrogen termination, oxide coverage, roughness, and surface state density of silicon during native oxidation in air

Optical properties of ZnO thin films: Ion layer gas reaction compared to sputter deposition

Wet-chemical passivation and characterization of silicon interfaces for solar cell applications

Interband optical properties of higher manganese silicide thin films

Electronic and related properties of crystalline semiconducting iron disilicide

Wet-chemical passivation of Si(111)- and Si(100)-substrates

Ellipsometric comparison of the native oxides of silicon and semiconducting iron disilicide (β-FeSi 2)

Growth and morphological properties of β-FeSi2 layers

Exciton absorption in β-FeSi2 epitaxial films

Theoretical and experimental study of interband optical transitions in semiconducting iron disilicide

Optical investigations of β-FeSi2 with and without Cr addition

Optical interband spectra and band structure of Ru2Si3 and Ru2Ge3

Excitonic transitions in β-FeSi2 epitaxial films and single crystals

H-terminated silicon: spectroscopic ellipsometry measurements correlated to the surface electronic properties

Structural, electronic and optical properties of semiconducting rhenium silicide

Structural, electronic, and optical properties of β − ( Fe 1 − x Co x ) Si 2

Preparation and properties of thin polycrystalline MnSi1.73 films

Application of UV-VIS and FTIR Spectroscopic Ellipsometry to the Characterization of Wet-Chemically Treated Si Surfaces

Electronic and optical properties of semiconducting iron disilicide

Optical characterization of Ru2Si3 by spectroscopic ellipsometry, UV-VIS-NIR spectroscopy and band structure calculations

Characterization of chemically prepared Si-surfaces by uv-vis and IR spectroscopic ellipsometry and surface photovoltage

Initial stages of microcrystalline silicon film growth

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