UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1816-1823

2008

Volltextzugriff (PDF)

Design and process related MIM cap reliability improvement

Microelectronics and reliability, 2015-12, Vol.55 (12), p.2516-2521

2015

Volltextzugriff (PDF)

Reproducible operating margins on a 72 800-device digital superconducting chip

Superconductor science & technology, 2015-10, Vol.28 (12), p.124003

2015

Volltextzugriff (PDF)

Reproducible operating margins on a 72800-device digital superconducting chip

Superconductor science & technology, 2015-12, Vol.28 (12), p.1-6

2015

Volltextzugriff (PDF)

6.9-cm super(2) Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.767-771

2016

Volltextzugriff (PDF)

6.9-cm2 Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.767-771

2016

Volltextzugriff (PDF)

6.9-cm 2 Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.767-771

2016

Volltextzugriff (PDF)

Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size

Microelectronics and reliability, 2014-12, Vol.54 (12), p.2682-2687

2014

Volltextzugriff (PDF)

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Materials science forum, 2010-01, Vol.645-648, p.1147-1150

2010

Volltextzugriff (PDF)

Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

IEEE electron device letters, 2009-07, Vol.30 (7), p.736-738

2009

Volltextzugriff (PDF)

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

Materials science forum, 2012, Vol.717-720, p.977-980, Article 977

2012

Volltextzugriff (PDF)

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

Materials science forum, 2011, Vol.679-680, p.591-594

2011

Volltextzugriff (PDF)

11.72 cm2 SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode

Materials science forum, 2012-05, Vol.717-720, p.961-964

2012

Volltextzugriff (PDF)

VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications

Materials science forum, 2009-01, Vol.615-617, p.711-714

2009

Volltextzugriff (PDF)

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection

Materials science forum, 2012, Vol.717-720, p.1171-1174

2012

Volltextzugriff (PDF)

4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications

SAE International journal of aerospace, 2009, Vol.1 (1), p.973-981, Article 2008-01-2883

2009

Volltextzugriff (PDF)

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Materials science forum, 2011, Vol.679-680, p.617-620

2011

Volltextzugriff (PDF)

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

Materials science forum, 2010-01, Vol.645-648, p.929-932

2010

Volltextzugriff (PDF)

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Materials science forum, 2009, Vol.600-603, p.1047-1050

2009

Volltextzugriff (PDF)

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Materials science forum, 2012, Vol.717-720, p.1013-1016

2012

Volltextzugriff (PDF)

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Materials science forum, 2009-01, Vol.615-617, p.719-722

2009

Volltextzugriff (PDF)

10 kV Silicon Carbide Junction Barrier Schottky Rectifier

Materials science forum, 2009, Vol.600-603, p.951-954

2009

Volltextzugriff (PDF)

Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs : Silicon carbide devices and technology

IEEE transactions on electron devices, 2008, Vol.55 (8), p.1816-1823

2008

Volltextzugriff (PDF)

Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter

Materials science forum, 2007-09, Vol.556-557, p.979-982

2007

Volltextzugriff (PDF)

Demonstration of superconducting memory for an RQL CPU

Proceedings of the International Symposium on Memory Systems, 2018, p.321-323

2018

Volltextzugriff (PDF)

1 – 25 von 35

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(28)
Mit Volltextzugriff
(33)

Publikationsform

Sprache

Englisch
(35)

Erscheinungsjahr

n.n

Thema

Science & Technology
(22)
Technology
(18)
Engineering
(11)
Materials Science
(11)
Silicon Carbide
(11)
Materials Science, Multidisciplinary
(9)
Engineering, Electrical & Electronic
(8)
Jfet
(8)
Physical Sciences
(6)
Physics
(6)
High Voltage
(5)
Physics, Applied
(5)
Devices
(4)
Electronics
(4)
Materials Science, Ceramics
(4)
Normally-Off
(4)
Transistors
(4)
4h-Sic
(3)
Applied Sciences
(3)
Exact Sciences And Technology
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs

Design and process related MIM cap reliability improvement

Reproducible operating margins on a 72 800-device digital superconducting chip

Reproducible operating margins on a 72800-device digital superconducting chip

6.9-cm super(2) Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA

6.9-cm2 Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA

6.9-cm 2 Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA

Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

11.72 cm2 SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode

VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection

4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

10 kV Silicon Carbide Junction Barrier Schottky Rectifier

Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs : Silicon carbide devices and technology

Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter

Demonstration of superconducting memory for an RQL CPU

Suchergebnisse filtern