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Physical review. C, Nuclear physics, 1990-05, Vol.41 (5), p.2414-2417

1990

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0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

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0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

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A 0.004mm/sup 2/ Portable Multiphase Clock Generator Tile for 1.2GHz RISC Microprocessor

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers, 2006, p.104-105

2006

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A 0.08-cc fully integrated LTCC transceiver front-end module for 5-GHz wireless LAN systems

Radio and Wireless Conference, 2003. RAWCON '03. Proceedings, 2003, p.357-360

2003

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0–1 Laws and decision problems for fragments of second-order logic

Information and computation, 1990-07, Vol.87 (1), p.302-338

1990

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0-1 laws and decision problems for fragments of second-order logic

[1988] Proceedings. Third Annual Symposium on Logic in Computer Science, 1988, p.2-11

1988

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0–1 Laws for Fragments of Existential Second-Order Logic: A Survey

Lecture notes in computer science, 2000, p.84-98

2000

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0–1 Laws for Fragments of Second-Order Logic: An Overview

Logic from Computer Science, p.265-286

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0-1 laws for infinitary logics

[1990] Proceedings. Fifth Annual IEEE Symposium on Logic in Computer Science, 1990, p.156-167

1990

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(0, 1,…, m-2,m) INTERPOLATION FOR THE LAGUERRE ABSCISSAS

Journal of computational mathematics, 1994-07, Vol.12 (3), p.239-247

Ying-guang, Shi

1994

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(0,1, ..., m - 2, m) INTERPOLATION FOR THE LAGUERRE ABSCISSAS

Journal of computational mathematics, 1994-04, Vol.12 (2), p.123-131

Ying-guang, Shi

1994

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A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35, p.818-823

1988

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-01, Vol.35 (7), p.818-823

1988

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A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

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0.1 mu m MOVPE grown InAlAs/InGaAs HEMT's with above 150 GHz operation capability

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.18-21

1992

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0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications

Digest. International Electron Devices Meeting, 2002, p.667-670

2002

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A 0.1-μm gate Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications

2002

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A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction

2012 Symposium on VLSI Circuits (VLSIC), 2012, p.42-43

2012

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0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997, 1997, p.74-77

1997

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A 0.168/spl mu/m/sup 2//0.11/spl mu/m/sup 2/ highly scalable high performance embedded DRAM cell for 90/65-nm logic applications

IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), 2005, p.31-32

2005

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0

0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process

0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

A 0.004mm/sup 2/ Portable Multiphase Clock Generator Tile for 1.2GHz RISC Microprocessor

A 0.08-cc fully integrated LTCC transceiver front-end module for 5-GHz wireless LAN systems

0–1 Laws and decision problems for fragments of second-order logic

0-1 laws and decision problems for fragments of second-order logic

0–1 Laws for Fragments of Existential Second-Order Logic: A Survey

0–1 Laws for Fragments of Second-Order Logic: An Overview

0-1 laws for infinitary logics

(0, 1,…, m-2,m) INTERPOLATION FOR THE LAGUERRE ABSCISSAS

(0,1, ..., m - 2, m) INTERPOLATION FOR THE LAGUERRE ABSCISSAS

A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

0.1 mu m MOVPE grown InAlAs/InGaAs HEMT's with above 150 GHz operation capability

0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications

A 0.1-μm gate Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs substrates

0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications

A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction

0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography

A 0.168/spl mu/m/sup 2//0.11/spl mu/m/sup 2/ highly scalable high performance embedded DRAM cell for 90/65-nm logic applications

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