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Particle-Templated Emulsification for Microfluidics-Free Digital Biology

Analytical chemistry (Washington), 2018-08, Vol.90 (16), p.9813-9820

2018

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Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers

Physical review. B, Condensed matter and materials physics, 2004-06, Vol.69 (23), p.235332.1-235332.39, Article 235332

2004

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Srv2/CAP is required for polarized actin cable assembly and patch internalization during clathrin-mediated endocytosis

Journal of cell science, 2016-01, Vol.129 (2), p.367-379

2016

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Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs ∕ GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

Journal of applied physics, 2005-02, Vol.97 (4), p.043523-043523-8

2005

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Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers

IEEE photonics technology letters, 2002-08, Vol.14 (8), p.1139-1141

2002

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IEEE_Xplore

Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb/s and a new scheme of 3R regenerators

Measurement science & technology, 2002-11, Vol.13 (11), p.1683-1691

2002

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Dual‐layered hydrogels allow complete genome recovery with nucleic acid cytometry

Biotechnology journal, 2022-04, Vol.17 (4), p.e2100483-n/a

2022

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Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers

Applied physics letters, 2005-11, Vol.87 (21)

2005

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Pattern-effect-free semiconductor optical amplifier achieved using quantum dots

Electronics letters, 2002-09, Vol.38 (19), p.1139-1140

2002

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Particle Templated Emulsification enables Microfluidic-Free Droplet Assays

Journal of visualized experiments, 2021-03 (169)

2021

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Athermal silicon optical interposers with quantum dot lasers operating from 25 to 125°C

Electronics letters, 2014-09, Vol.50 (19), p.1377-1378

2014

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Relationship Between Microvascular Status And Diagnostic Performance Of Dynamic Ct Perfusion For Detecting Ischemia

Journal of cardiovascular computed tomography, 2023-07, Vol.17 (4), p.S31-S31

2023

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Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs [311] B substrate

IEEE journal of selected topics in quantum electronics, 1999-05, Vol.5 (3), p.530-536

1999

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IEEE_Xplore

A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate

IEEE photonics technology letters, 1998-05, Vol.10 (5), p.633-635

1998

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IEEE_Xplore

Polarization control of vertical-cavity surface emitting lasers using a birefringent metal/dielectric polarizer loaded on top distributed Bragg reflector

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.667-673

1995

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IEEE_Xplore

Intraoperative mapping of the right atrial free wall during sinus rhythm: variety of activation patterns and incidence of postoperative atrial fibrillation

European journal of cardio-thoracic surgery, 2006-07, Vol.30 (1), p.132-139

Sakamoto, Shun-ichiro

2006

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Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure

Electronics letters, 1995-03, Vol.31 (7), p.560-562

1995

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Process-free estimation of threshold current density of InAs quantum dot laser

Physica status solidi. C, 2008-07, Vol.5 (9), p.2935-2937

2008

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Excess intensity noise originated from polarization fluctuation in vertical-cavity surface-emitting lasers

IEEE photonics technology letters, 1995-10, Vol.7 (10), p.1113-1115

1995

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IEEE_Xplore

Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure

Physica Status Solidi (b), 2007-01, Vol.244 (1), p.82-86

2007

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Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth

Applied physics letters, 2004-11, Vol.85 (18), p.4145-4147

2004

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Recombination, Transport and Loss Mechanisms in p-doped InAs/GaAs Quantum Dots

Physics of Semiconductors; Part B, 2007, Vol.893, p.837-838

2007

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Single-transverse mode and stable-polarization operation under high-speed modulation of InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

IEEE photonics technology letters, 1998-12, Vol.10 (12), p.1676-1678

1998

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IEEE_Xplore

Wavelength control of vertical cavity surface-emitting lasers by using nonplanar MOCVD

IEEE photonics technology letters, 1995-01, Vol.7 (1), p.10-12

1995

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IEEE_Xplore

Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers

Applied physics letters, 2006-11, Vol.89 (19)

2006

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Particle-Templated Emulsification for Microfluidics-Free Digital Biology

Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers

Srv2/CAP is required for polarized actin cable assembly and patch internalization during clathrin-mediated endocytosis

Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs ∕ GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers

Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb/s and a new scheme of 3R regenerators

Dual‐layered hydrogels allow complete genome recovery with nucleic acid cytometry

Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers

Pattern-effect-free semiconductor optical amplifier achieved using quantum dots

Particle Templated Emulsification enables Microfluidic-Free Droplet Assays

Athermal silicon optical interposers with quantum dot lasers operating from 25 to 125°C

Relationship Between Microvascular Status And Diagnostic Performance Of Dynamic Ct Perfusion For Detecting Ischemia

Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs [311] B substrate

A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate

Polarization control of vertical-cavity surface emitting lasers using a birefringent metal/dielectric polarizer loaded on top distributed Bragg reflector

Intraoperative mapping of the right atrial free wall during sinus rhythm: variety of activation patterns and incidence of postoperative atrial fibrillation

Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure

Process-free estimation of threshold current density of InAs quantum dot laser

Excess intensity noise originated from polarization fluctuation in vertical-cavity surface-emitting lasers

Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure

Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth

Recombination, Transport and Loss Mechanisms in p-doped InAs/GaAs Quantum Dots

Single-transverse mode and stable-polarization operation under high-speed modulation of InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

Wavelength control of vertical cavity surface-emitting lasers by using nonplanar MOCVD

Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers

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