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Valproic acid inhibits adhesion of vincristine- and cisplatin-resistant neuroblastoma tumour cells to endothelium

British journal of cancer, 2007-06, Vol.96 (11), p.1699-1706

2007

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GaAs/GaSb-AlAs/AlSb optical Bragg reflectors

Electronics letters, 2006-05, Vol.42 (10), p.597-598

2006

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Recent advances in Sb-based midwave-infrared lasers

IEEE journal of quantum electronics, 1997-08, Vol.33 (8), p.1403-1406

1997

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Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

Applied physics letters, 1995-12, Vol.67 (25), p.3700-3702

1995

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High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing

Electronics letters, 2000-07, Vol.36 (15), p.1301-1303

2000

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Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice

Physical review. B, Condensed matter, 1998-11, Vol.58 (19), p.13047-13054

1998

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Wavelength dependence of combined local and carrier transport optical nonlinearities in a hetero n - i - p - i structure

Journal of applied physics, 2006-01, Vol.99 (2), p.023501-023501-4

2006

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NONLINEAR OPTICAL PROPERTIES OF A HETERO-nipi STRUCTURE WITH COUPLED QUANTUM WELLS

Journal of nonlinear optical physics & materials, 2005-09, Vol.14 (3), p.449-460

2005

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Ion-induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1991-05, Vol.9 (3), p.1395-1401

1991

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Design and measurement of an MQW nipi waveguide modulator for optoelectronic integrated circuits

IEEE journal of quantum electronics, 1996-06, Vol.32 (6), p.1029-1037

1996

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Combined local and carrier transport optical nonlinearities in a hetero n-i-p-i structure

Applied physics letters, 1991-03, Vol.58 (10), p.1018-1020

1991

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Differential gain, differential index, and linewidth enhancement factor for a 4 μm superlattice laser active layer

Journal of applied physics, 1999-07, Vol.86 (2), p.713-718

1999

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Room-temperature optical nonlinearities in strained (InAs)2(GaAs)5 superlattice quantum wells

Journal of applied physics, 1991-03, Vol.69 (5), p.3243-3248

1991

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InAs/antimonide-based resonant tunneling structures with ternary alloy layers

Solid-state electronics, 1994-04, Vol.37 (4), p.981-985

1994

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Optical control of microwaves with semiconductor n-i-p-i structures

Applied physics letters, 1993-12, Vol.63 (25), p.3494-3496

1993

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Linear optical properties of quantum wells composed of all-binary InAs/GaAs short-period strained-layer superlattices

Applied physics letters, 1991-03, Vol.58 (9), p.937-939

1991

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InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.1368-1374

1995

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InAs/GaAs short-period strained-layer superlattices grown in GaAs as quantum confined Stark effect modulators

Applied physics letters, 1992-02, Vol.60 (6), p.686-688

1992

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Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures

Journal of applied physics, 2001-03, Vol.89 (6), p.3283-3289

2001

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Mycophenolate mofetil increases adhesion capacity of tumor cells in vitro

Transplantation, 2003-12, Vol.76 (12), p.1735

2003

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An improved Au/Be contact to p-type InP

Journal of applied physics, 1987-01, Vol.61 (2), p.808-809

1987

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GaAs/GaSb-AlAs/AlSb optical Bragg reflectors

Electronics letters, 2006-05, Vol.42 (10), p.1-1

2006

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III-V interband 5.2 μm laser operating at 185 K

Applied physics letters, 1997-12, Vol.71 (26), p.3764-3766

1997

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Demonstration of 3.5μm Ga1-xInxSb/InAs superlattice diode laser

Electronics letters, 1995-02, Vol.31 (4), p.275-276

1995

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Optical nonlinearities and ultrafast charge transport in all-binary InAs/GaAs strained hetero n-i-p-i's

Journal of applied physics, 1991-12, Vol.70 (11), p.6891-6897

1991

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Valproic acid inhibits adhesion of vincristine- and cisplatin-resistant neuroblastoma tumour cells to endothelium

GaAs/GaSb-AlAs/AlSb optical Bragg reflectors

Recent advances in Sb-based midwave-infrared lasers

Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing

Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice

Wavelength dependence of combined local and carrier transport optical nonlinearities in a hetero n - i - p - i structure

NONLINEAR OPTICAL PROPERTIES OF A HETERO-nipi STRUCTURE WITH COUPLED QUANTUM WELLS

Ion-induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation

Design and measurement of an MQW nipi waveguide modulator for optoelectronic integrated circuits

Combined local and carrier transport optical nonlinearities in a hetero n-i-p-i structure

Differential gain, differential index, and linewidth enhancement factor for a 4 μm superlattice laser active layer

Room-temperature optical nonlinearities in strained (InAs)2(GaAs)5 superlattice quantum wells

InAs/antimonide-based resonant tunneling structures with ternary alloy layers

Optical control of microwaves with semiconductor n-i-p-i structures

Linear optical properties of quantum wells composed of all-binary InAs/GaAs short-period strained-layer superlattices

InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques

InAs/GaAs short-period strained-layer superlattices grown in GaAs as quantum confined Stark effect modulators

Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures

Mycophenolate mofetil increases adhesion capacity of tumor cells in vitro

An improved Au/Be contact to p-type InP

GaAs/GaSb-AlAs/AlSb optical Bragg reflectors

III-V interband 5.2 μm laser operating at 185 K

Demonstration of 3.5μm Ga1-xInxSb/InAs superlattice diode laser

Optical nonlinearities and ultrafast charge transport in all-binary InAs/GaAs strained hetero n-i-p-i's

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