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Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Light, science & applications, 2022-10, Vol.11 (1), p.299-299, Article 299

2022

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Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket

Photonics, 2023-05, Vol.10 (5), p.534

2023

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Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends

IEEE journal of solid-state circuits, 2016-09, Vol.51 (9), p.1985-1993

2016

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An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4175-4183

2013

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A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

IEEE journal of solid-state circuits, 1997-09, Vol.32 (9), p.1430-1439

1997

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RF FDSOI Technology and modelling

2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, p.154-154

Harame, David

2018

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RF FDSOI Technology and Modelling

ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 2018, p.214-214

Harame, David

2018

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Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs

IEEE transactions on microwave theory and techniques, 2005-02, Vol.53 (2), p.506-514

2005

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RF performance of 28nm PolySiON and HKMG CMOS devices

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015, p.43-46

2015

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Silicon Germanium: Technology, Modeling, and Design

1, 2004

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Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1440-1448

2000

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Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

IEEE journal of solid-state circuits, 1997-09, Vol.32 (9), p.1455-1459

1997

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Impact of collector-base junction traps on low-frequency noise in high breakdown Voltage SiGe HBTs

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1475-1482

2004

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A 1.7-dB Minimum NF, 22-32 GHz Low-Noise Feedback Amplifier with Multistage Noise Matching in 22-nm SOI-CMOS

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, p.211-214

2019

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Bilayer Silicon Nitride Based On-chip Polarization Rotator for O-band Photonic Applications

2023 IEEE Photonics Conference (IPC), 2023, p.1-2

2023

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Compact Modeling of Key Passive Silicon Photonic Components for a Process Design Kit

2023 IEEE Photonics Conference (IPC), 2023, p.1-2

2023

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Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2682-2689

2000

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AIM Photonics Demonstration of a 300 mm Si Photonics Interposer

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.233-238

2023

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2.2-pJ/bit 30-Gbit/s Mach-Zehnder Modulator Driver in 22-nm-FDSOI

2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.1530-1533

2018

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The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.429-435

2002

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Electrically Pumped Quantum-Dot Lasers Grown on CMOS-Compatible 300 mm Si Wafers

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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Integrated RF components in a SiGe bipolar technology

IEEE journal of solid-state circuits, 1997-09, Vol.32 (9), p.1440-1445, Article 1440

1997

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Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

Proceedings of the IEEE, 2005, Vol.93 (9), p.1539-1558

2005

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The influence of Ge grading on the bias and temperature characteristics of SiGe HBTs for precision analog circuits

IEEE transactions on electron devices, 2000-02, Vol.47 (2), p.292-298

2000

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On the optimization and design of SiGe HBT cascode low-noise amplifiers

Solid-state electronics, 2005-03, Vol.49 (3), p.329-341

2005

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Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket

Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends

An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

RF FDSOI Technology and modelling

RF FDSOI Technology and Modelling

Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs

RF performance of 28nm PolySiON and HKMG CMOS devices

Silicon Germanium: Technology, Modeling, and Design

Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

Impact of collector-base junction traps on low-frequency noise in high breakdown Voltage SiGe HBTs

A 1.7-dB Minimum NF, 22-32 GHz Low-Noise Feedback Amplifier with Multistage Noise Matching in 22-nm SOI-CMOS

Bilayer Silicon Nitride Based On-chip Polarization Rotator for O-band Photonic Applications

Compact Modeling of Key Passive Silicon Photonic Components for a Process Design Kit

Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

AIM Photonics Demonstration of a 300 mm Si Photonics Interposer

2.2-pJ/bit 30-Gbit/s Mach-Zehnder Modulator Driver in 22-nm-FDSOI

The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs

Electrically Pumped Quantum-Dot Lasers Grown on CMOS-Compatible 300 mm Si Wafers

Integrated RF components in a SiGe bipolar technology

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

The influence of Ge grading on the bias and temperature characteristics of SiGe HBTs for precision analog circuits

On the optimization and design of SiGe HBT cascode low-noise amplifiers

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