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Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs

Journal of applied physics, 2022-04, Vol.131 (14)

2022

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Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Applied physics letters, 2022-02, Vol.120 (6)

2022

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Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors

Applied physics letters, 2021-08, Vol.119 (7)

2021

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Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

Applied physics letters, 2020-07, Vol.117 (4)

2020

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Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Journal of applied physics, 2015-01, Vol.117 (2)

2015

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Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

Applied physics letters, 2017-08, Vol.111 (6)

2017

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Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Applied physics letters, 2019-09, Vol.115 (13)

2019

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Prevalence of neuropathic pain in terminally ill patients with cancer admitted to a general ward: a prospective observational study

Journal of international medical research, 2021-01, Vol.49 (1), p.300060520987726-300060520987726

2021

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Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, p.83-86

2021

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Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS

Materials science forum, 2020-07, Vol.1004, p.795-800, Article 795

2020

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Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2/SiC (0 3 ¯ 3 8 ¯ ) interfaces

Japanese Journal of Applied Physics, 2019-02, Vol.58 (SB)

2019

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Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 11¯00 m-face and 112¯ a-face characterized by Hall effect measurements

Applied physics letters, 2019-09, Vol.115 (13)

2019

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Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method

Materials science forum, 2019-07, Vol.963, p.80-84

2019

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Iron loss evaluation of magnetic materials excited by a SiC inverter with a Schottky barrier diode wall-integrated trench MOSFET

AIP advances, 2020-12, Vol.10 (12), p.125129-125129-5

2020

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High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET

Materials science forum, 2020-07, Vol.1004, p.1115-1122

2020

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Hole trapping in SiC-MOS devices evaluated by fast-capacitance-voltage method

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method

Japanese Journal of Applied Physics, 2021-06, Vol.60 (6), p.60901

2021

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Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

AIP advances, 2018-08, Vol.8 (8), p.085305-085305-6

2018

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Reduction of interface states by hydrogen treatment at the aluminum oxide/4H-SiC Si-face interface

AIP advances, 2016-10, Vol.6 (10), p.105206-105206-6

2016

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Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets

Materials science forum, 2018-06, Vol.924, p.748-751

2018

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Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3), p.6

2018

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Investigation of stress at SiO2/4H-SiC interface induced by thermal oxidation by confocal Raman microscopy

Japanese Journal of Applied Physics, 2019-02, Vol.58 (SB)

2019

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Dynamic characterization of the threshold voltage instability under the pulsed gate bias stress in 4H-SiC MOSFET

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

Volltextzugriff (PDF)

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4, Article 04FA07

2018

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Development of a High-Speed Switching Silicon Carbide Power Module

Materials science forum, 2019-07, Vol.963, p.864-868

2019

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Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs

Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors

Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Prevalence of neuropathic pain in terminally ill patients with cancer admitted to a general ward: a prospective observational study

Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET

Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS

Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2/SiC (0 3 ¯ 3 8 ¯ ) interfaces

Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 11¯00 m-face and 112¯ a-face characterized by Hall effect measurements

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method

Iron loss evaluation of magnetic materials excited by a SiC inverter with a Schottky barrier diode wall-integrated trench MOSFET

High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET

Hole trapping in SiC-MOS devices evaluated by fast-capacitance-voltage method

Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

Reduction of interface states by hydrogen treatment at the aluminum oxide/4H-SiC Si-face interface

Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets

Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors

Investigation of stress at SiO2/4H-SiC interface induced by thermal oxidation by confocal Raman microscopy

Dynamic characterization of the threshold voltage instability under the pulsed gate bias stress in 4H-SiC MOSFET

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

Development of a High-Speed Switching Silicon Carbide Power Module

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