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Theory of Jahn–Teller distortions of the P donor in diamond

Journal of physics. Condensed matter, 2005-09, Vol.17 (37), p.5831-5837

2005

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Models of GaSb/InAs type-II infrared detectors at very long wavelengths: band offsets and interface bonds

Semiconductor science and technology, 2003-04, Vol.18 (4), p.225-233

2003

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Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 μm wavelength range

Semiconductor science and technology, 2001-04, Vol.16 (4), p.263-272

2001

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Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-01, Vol.20 (1), p.209-215

2002

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Absorption and emission spectra of InAs/Ga1-xInxSb/AlSb nanostructures for infrared applications

Applied surface science, 2000-10, Vol.166 (1-4), p.35-39

2000

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Electronic structure and optical properties of Si-Ge superlattices

Physical review letters, 1988-05, Vol.60 (21), p.2221-2224

1988

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Absorption coefficient and electric-field-induced localization in InAs-AlGaSb multi-quantum well structures

Semiconductor science and technology, 1994-12, Vol.9 (12), p.2210-2216

1994

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The role of layer width in valley mixing and cross-interface recombination in GaAs-AlAs superlattices

Journal of physics. Condensed matter, 1991-06, Vol.3 (24), p.4365-4371

1991

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Band structure of GaInAs-InP superlattices

Semiconductor science and technology, 1987-05, Vol.2 (5), p.261-267, Article 261

1987

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Optical properties of mesoscopic Si-Ge heterostructures

Physica scripta, 1992-01, Vol.1992, p.174-177

1992

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Quantitative theory of scattering in antimonide-based heterostructures with imperfect interfaces

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-07, Vol.18 (4), p.2088-2095

2000

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Effects of stress on the dry oxidation of silicon theory of molecular-oxygen diffusion in silica

Philosophical magazine letters, 1987-07, Vol.56 (1), p.41-45

1987

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Effect of ordering, interface imperfections and clusters, and external electric fields on optical spectra of Si–SiGe heterostructures

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-07, Vol.11 (4), p.1689-1692

1993

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Microscopic description of electronic structure and scattering in disordered antimonide-based heterostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-09, Vol.17 (5), p.2025-2029

1999

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The effects of modulation doping, static electric field and alloy ordering upon the electronic structure of GaAs-Ga1-xAlxAs superlattices and heterojunctions

Semiconductor science and technology, 1986-10, Vol.1 (4), p.256-263

1986

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Microscopic theory of heterojunctions

Vacuum, 1990, Vol.41 (1), p.712-714

1990

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The effects of interface disorder on interband and intersubband transitions in Gem-Sin-Gem structures

Semiconductor science and technology, 1997-11, Vol.12 (11), p.1446-1450

1997

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Optical spectra and recombination in Si–Ge heterostructures

Thin solid films, 1997-02, Vol.294 (1), p.186-189

1997

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Optimisation and stability of optical spectra of novel SiGe quantum well structures in an external electric field

Journal of crystal growth, 1995-12, Vol.157 (1), p.11-14

1995

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Stark shifts in GaAs-Ga1-xAlxAs finite-length superlattices

Physical review. B, Condensed matter, 1990-02, Vol.41 (5), p.2900-2905

1990

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The role of band structure effects on electron capture and real space transfer in semiconductor superlattices

Superlattices and microstructures, 1991, Vol.10 (4), p.421-424

1991

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The effect of an electric field on optical spectra and transmission in Si-Si1-xGex quantum well structures

Superlattices and microstructures, 1994-09, Vol.16 (2), p.125-131

1994

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Confined electron states in GaAs-Ga1-xAlXAs quantum wires

Physical review. B, Condensed matter, 1987-02, Vol.35 (5), p.2463-2466

1987

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Effect of band structure on stark shifts in GaAs quantum wells

Physical review. B, Condensed matter, 1989-09, Vol.40 (9), p.6420-6423

1989

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Electronic structure of Ge in SiO2

Journal of physics. C, Solid state physics, 1985-09, Vol.18 (25), p.4957-4962

1985

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Theory of Jahn–Teller distortions of the P donor in diamond

Models of GaSb/InAs type-II infrared detectors at very long wavelengths: band offsets and interface bonds

Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 μm wavelength range

Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications

Absorption and emission spectra of InAs/Ga1-xInxSb/AlSb nanostructures for infrared applications

Electronic structure and optical properties of Si-Ge superlattices

Absorption coefficient and electric-field-induced localization in InAs-AlGaSb multi-quantum well structures

The role of layer width in valley mixing and cross-interface recombination in GaAs-AlAs superlattices

Band structure of GaInAs-InP superlattices

Optical properties of mesoscopic Si-Ge heterostructures

Quantitative theory of scattering in antimonide-based heterostructures with imperfect interfaces

Effects of stress on the dry oxidation of silicon theory of molecular-oxygen diffusion in silica

Effect of ordering, interface imperfections and clusters, and external electric fields on optical spectra of Si–SiGe heterostructures

Microscopic description of electronic structure and scattering in disordered antimonide-based heterostructures

The effects of modulation doping, static electric field and alloy ordering upon the electronic structure of GaAs-Ga1-xAlxAs superlattices and heterojunctions

Microscopic theory of heterojunctions

The effects of interface disorder on interband and intersubband transitions in Gem-Sin-Gem structures

Optical spectra and recombination in Si–Ge heterostructures

Optimisation and stability of optical spectra of novel SiGe quantum well structures in an external electric field

Stark shifts in GaAs-Ga1-xAlxAs finite-length superlattices

The role of band structure effects on electron capture and real space transfer in semiconductor superlattices

The effect of an electric field on optical spectra and transmission in Si-Si1-xGex quantum well structures

Confined electron states in GaAs-Ga1-xAlXAs quantum wires

Effect of band structure on stark shifts in GaAs quantum wells

Electronic structure of Ge in SiO2

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