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Identification and separation of rectifier mechanisms in Si/SiGe ballistic cross junctions

Journal of applied physics, 2017-01, Vol.121 (1)

2017

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Quantization and anomalous structures in the conductance of Si/SiGe quantum point contacts

Journal of applied physics, 2016-04, Vol.119 (13)

2016

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Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Solid-state electronics, 2004-08, Vol.48 (8), p.1317-1323

2004

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Results of a Precrash Application Based on Laser Scanner and Short-Range Radars

IEEE Transactions on intelligent transportation systems, 2009-12, Vol.10 (4), p.584-593

2009

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Influence of channel width on the performance of an injection-type ballistic rectifier: Carrier injection versus hot-electron thermopower

Microelectronic engineering, 2011-08, Vol.88 (8), p.2386-2389

2011

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Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

Applied physics letters, 2000-06, Vol.76 (24), p.3552-3554

2000

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Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

Journal of applied physics, 2002-10, Vol.92 (8), p.4290-4295

2002

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Efficient injection-type ballistic rectification in Si/SiGe cross junctions

Physica. E, Low-dimensional systems & nanostructures, 2010-09, Vol.42 (10), p.2618-2621

2010

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Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

Semiconductor science and technology, 2008-10, Vol.23 (10), p.105001

2008

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Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition

Applied physics letters, 2003-12, Vol.83 (26), p.5464-5466

2003

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Phonon-induced breakdown of negative bend resistance in an asymmetric Si∕SiGe cross junction

Applied physics letters, 2005-12, Vol.87 (25)

2005

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Low energy plasma enhanced chemical vapor deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.89 (1), p.288-295

2002

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Quantum Interference Effects in p-Si1−xGex Quantum Wells

Journal of low temperature physics, 2010-04, Vol.159 (1-2), p.230-233

2010

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Quantized conductance and bend resistance in an asymmetric Si/SiGe cross junction

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.539-542

2006

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Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.147 (1), p.29-34

1999

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Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

Applied physics letters, 2004-01, Vol.84 (4), p.610-612

2004

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Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

Solid-state electronics, 2007-03, Vol.51 (3), p.449-459

2007

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DC performance of deep submicrometer Schottky-gated n-channel Si:SiGe HFETs at low temperatures

IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.2067-2074

2005

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Enhanced strain relaxation of epitaxial SiGe layers on Si(1 0 0) after H + ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.148 (1), p.200-205

1999

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Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

Journal of crystal growth, 2005-08, Vol.281 (2), p.281-289

2005

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High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition

Thin solid films, 2004-07, Vol.459 (1), p.37-40

2004

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Microwave noise performance and modeling of SiGe-based HFETs

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2409-2415

2005

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Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Microelectronics and reliability, 2004-07, Vol.44 (7), p.1101-1107

2004

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Monolithic micropower amplifier using SiGe n-MODFET device

Electronics letters, 2003-06, Vol.39 (12), p.884

2003

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Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance

Solid-state electronics, 2004-10, Vol.48 (10), p.1921-1925

2004

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Identification and separation of rectifier mechanisms in Si/SiGe ballistic cross junctions

Quantization and anomalous structures in the conductance of Si/SiGe quantum point contacts

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Results of a Precrash Application Based on Laser Scanner and Short-Range Radars

Influence of channel width on the performance of an injection-type ballistic rectifier: Carrier injection versus hot-electron thermopower

Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

Efficient injection-type ballistic rectification in Si/SiGe cross junctions

Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition

Phonon-induced breakdown of negative bend resistance in an asymmetric Si∕SiGe cross junction

Low energy plasma enhanced chemical vapor deposition

Quantum Interference Effects in p-Si1−xGex Quantum Wells

Quantized conductance and bend resistance in an asymmetric Si/SiGe cross junction

Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation

Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

DC performance of deep submicrometer Schottky-gated n-channel Si:SiGe HFETs at low temperatures

Enhanced strain relaxation of epitaxial SiGe layers on Si(1 0 0) after H + ion implantation

Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition

Microwave noise performance and modeling of SiGe-based HFETs

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Monolithic micropower amplifier using SiGe n-MODFET device

Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance

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