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Structure of GaAs(001) (2×4)-c(2×8) determined by scanning tunneling microscopy

Physical review letters, 1988-05, Vol.60 (21), p.2176-2179

1988

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Blue-green injection lasers containing pseudomorphic Zn1-xMgxSySe1-y cladding layers and operating up to 394 K

Applied physics letters, 1993-05, Vol.62 (20), p.2462-2464

1993

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Compensating surface defects induced by Si doping of GaAs

Physical review letters, 1991-11, Vol.67 (19), p.2697-2700

1991

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Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy

Applied physics letters, 1991-01, Vol.58 (4), p.406-408

1991

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Effect of Si doping on surface ordering of MBE GaAs(001)

Ultramicroscopy, 1992-07, Vol.42 (B), p.1281-1287

1992

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Compensating surface defects induced by Si doping of GaAs

Physical review letters, 1991-11, Vol.67 (19), p.2697-2700

1991

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MBE growth on vicinal GaAs(001) surfaces studied by scanning tunneling microscopy

Surface science, 1992, Vol.267 (1), p.153-160

1992

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Characterization of low defect density blue-green lasers

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.573-581

1996

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Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular-beam epitaxially grown GaAs(001)

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1992-07, Vol.10 (4), p.1874-1880

1992

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Electrical characterization of p-type ZnSe:N and Zn1-xMgxSySe1-y:N thin films

Applied physics letters, 1993-11, Vol.63 (20), p.2800-2802

1993

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Different Fermi-level pinning behavior on n- and p-type GaAs(001)

Physical review. B, Condensed matter, 1993-08, Vol.48 (7), p.4612-4615

1993

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Defect characterization of etch pits in ZnSe based epitaxial layers

Applied physics letters, 1996-08, Vol.69 (8), p.1089-1091

1996

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Thermal characteristics of blue-green II-VI semiconductor lasers

Journal of applied physics, 1994-10, Vol.76 (7), p.3988-3993

1994

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GaAs(111) A-(2×2) reconstruction studied by scanning tunneling microscopy

Physical review. B, Condensed matter, 1990-02, Vol.41 (5), p.3226-3229

1990

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The effect of cooling rate on the surface reconstruction of annealed silicon(111) studied by scanning tunneling microscopy and low-energy electron diffraction

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1988-03, Vol.6 (2), p.488-492

1988

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Device characteristics of green II–VI semiconductor lasers

Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.43 (1), p.49-54

1997

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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.447-452

1999

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Compensing surface defects induced by Si doping of GaAs

Physical review letters, 1991, Vol.67 (19), p.2697-2700

1991

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Growth on (001) and vicinal (001) GaAs surfaces in a combined scanning tunneling microscope/molecular-beam epitaxy system

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1991-03, Vol.9 (2), p.938-943

1991

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Electrical characterization of p -type ZnSe:N and Zn1− x Mg x S y Se1− y :N thin films

Applied physics letters, 1993-11, Vol.63 (20), p.2800-2802

1993

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The (001) surface of molecular‐beam epitaxially grown GaAs studied by scanning tunneling microscopy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1988-07, Vol.6 (4), p.1468-1471

1988

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Device characteristics of green II-IV semiconductor lasers

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-01, Vol.B43 (1-3), p.49-54

1997

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Blue-green injection lasers containing pseudomorphic Zn(1-x)Mg(x)S(y)Se(1-y) cladding layers and operating up to 394 K

Applied physics letters, 1993-05, Vol.62 (20), p.2462-2464

1993

Volltextzugriff (PDF)

Blue-green injection lasers containing pseudomorphic Zn1− x Mg x S y Se1− y cladding layers and operating up to 394 K

Applied physics letters, 1993-05, Vol.62 (20), p.2462-2464

1993

Volltextzugriff (PDF)

Automatic real time arrhythmia monitoring in the intensive coronary care unit

The American journal of cardiology, 1977-01, Vol.39 (5), p.701-708

1977

Volltextzugriff (PDF)

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Structure of GaAs(001) (2×4)-c(2×8) determined by scanning tunneling microscopy

Blue-green injection lasers containing pseudomorphic Zn1-xMgxSySe1-y cladding layers and operating up to 394 K

Compensating surface defects induced by Si doping of GaAs

Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy

Effect of Si doping on surface ordering of MBE GaAs(001)

Compensating surface defects induced by Si doping of GaAs

MBE growth on vicinal GaAs(001) surfaces studied by scanning tunneling microscopy

Characterization of low defect density blue-green lasers

Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular-beam epitaxially grown GaAs(001)

Electrical characterization of p-type ZnSe:N and Zn1-xMgxSySe1-y:N thin films

Different Fermi-level pinning behavior on n- and p-type GaAs(001)

Defect characterization of etch pits in ZnSe based epitaxial layers

Thermal characteristics of blue-green II-VI semiconductor lasers

GaAs(111) A-(2×2) reconstruction studied by scanning tunneling microscopy

The effect of cooling rate on the surface reconstruction of annealed silicon(111) studied by scanning tunneling microscopy and low-energy electron diffraction

Device characteristics of green II–VI semiconductor lasers

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

Compensing surface defects induced by Si doping of GaAs

Growth on (001) and vicinal (001) GaAs surfaces in a combined scanning tunneling microscope/molecular-beam epitaxy system

Electrical characterization of p -type ZnSe:N and Zn1− x Mg x S y Se1− y :N thin films

The (001) surface of molecular‐beam epitaxially grown GaAs studied by scanning tunneling microscopy

Device characteristics of green II-IV semiconductor lasers

Blue-green injection lasers containing pseudomorphic Zn(1-x)Mg(x)S(y)Se(1-y) cladding layers and operating up to 394 K

Blue-green injection lasers containing pseudomorphic Zn1− x Mg x S y Se1− y cladding layers and operating up to 394 K

Automatic real time arrhythmia monitoring in the intensive coronary care unit

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