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Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

IEEE electron device letters, 2010-03, Vol.31 (3), p.192-194

2010

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Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique

IEEE electron device letters, 2010-08, Vol.31 (8), p.848-850

2010

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Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film

Current Applied Physics, 2010, 10(1), , pp.41-46

2010

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High threshold voltage p-GaN gate power devices on 200 mm Si

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.315-318

2013

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Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

Microelectronic engineering, 2011-07, Vol.88 (7), p.1221-1224

2011

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AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.2013-2015

2010

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Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.1981

2007

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Effect of catalyst for nickel films for NiSi formation with improved interface roughness

Thin solid films, 2011-08, Vol.519 (20), p.6658-6661

2011

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Effects of TMAH Treatment on Device Performance of Normally Off \hbox\hbox/\hbox MOSFET

IEEE electron device letters, 2011-10, Vol.32 (10), p.1376-1378

2011

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Normally-off operation of Al2O3/GaN MOSFET based on AlGaN/GaN heterostructure with p-GaN buffer layer

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.229-231

2010

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Optimizing the Gate-to-Drift Overlap Length of Lateral Double Diffused Metal–Oxide–Semiconductor Field Effect Transistor Devices to Improve Hot-Carrier Device Lifetime

Japanese Journal of Applied Physics, 2006-03, Vol.45 (3R), p.1525

2006

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Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition

Journal of the Korean Physical Society, 2009, 55(3), , pp.1153-1157

2009

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Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal--Oxide--Semiconductor Field-Effect Transistor with Postdeposition Annealing

Jpn J Appl Phys, 2010-12, Vol.49 (12), p.126501-126501-4

2010

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Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2824

2008

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Effects of TMAH Treatment on Device Performance of Normally Off Al2O3/GaN MOSFET

IEEE electron device letters, 2011-10, Vol.32 (10), p.1376-1378

2011

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Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

Journal of physics. D, Applied physics, 2013-04, Vol.46 (15)

2013

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Superior contact properties of trench filled contact for 3D MOSFET

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), 2009, p.469-472

2009

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Effect of oxygen species on the positive flat-band voltage shift in Al 2 O 3 /GaN metal–insulator–semiconductor capacitors with post-deposition annealing

Journal of physics. D, Applied physics, 2013-04, Vol.46 (15), p.155101

2013

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Effect of pre-cleaning on the formation of low resistance Ni-silicide from atomic layer deposited nickel film

2009 International Semiconductor Device Research Symposium, 2009, p.1-2

2009

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Effects of TMAH Treatment on Device Performance of Normally Off [Formula Omitted] MOSFET

IEEE electron device letters, 2011-10, Vol.32 (10), p.1376

2011

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Effects of TMAH Treatment on Device Performance of Normally Off hbox Al 2 hbox O 3 / hbox GaN MOSFET

IEEE electron device letters, 2011-10, Vol.32 (10), p.1376-1378

2011

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Improvement of field effect mobility with dual-work function gate in n-LDMOST by using ni-silicidation of poly-Si gate

2010 Silicon Nanoelectronics Workshop, 2010, p.1-2

2010

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Normally-off operation of recess-gated GaN MOSFET on silicon substrate using AlGaN/GaN source/drain with high 2DEG density

2009 International Semiconductor Device Research Symposium, 2009, p.1-2

2009

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High Performance in a Normally-off Al2O3/GaN MOSFET Based on an AlGaN/GaN Heterostructure with a p-GaN Buffer Layer

Journal of the Korean Physical Society, 2011-05, Vol.58 (5(2)), p.1500-1504

2011

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Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al 2 O 3 /GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing

Japanese Journal of Applied Physics, 2010-12, Vol.49 (12R), p.126501

2010

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Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique

Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film

High threshold voltage p-GaN gate power devices on 200 mm Si

Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain

Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition

Effect of catalyst for nickel films for NiSi formation with improved interface roughness

Effects of TMAH Treatment on Device Performance of Normally Off \hbox\hbox/\hbox MOSFET

Normally-off operation of Al2O3/GaN MOSFET based on AlGaN/GaN heterostructure with p-GaN buffer layer

Optimizing the Gate-to-Drift Overlap Length of Lateral Double Diffused Metal–Oxide–Semiconductor Field Effect Transistor Devices to Improve Hot-Carrier Device Lifetime

Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition

Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal--Oxide--Semiconductor Field-Effect Transistor with Postdeposition Annealing

Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer

Effects of TMAH Treatment on Device Performance of Normally Off Al2O3/GaN MOSFET

Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

Superior contact properties of trench filled contact for 3D MOSFET

Effect of oxygen species on the positive flat-band voltage shift in Al 2 O 3 /GaN metal–insulator–semiconductor capacitors with post-deposition annealing

Effect of pre-cleaning on the formation of low resistance Ni-silicide from atomic layer deposited nickel film

Effects of TMAH Treatment on Device Performance of Normally Off [Formula Omitted] MOSFET

Effects of TMAH Treatment on Device Performance of Normally Off hbox Al 2 hbox O 3 / hbox GaN MOSFET

Improvement of field effect mobility with dual-work function gate in n-LDMOST by using ni-silicidation of poly-Si gate

Normally-off operation of recess-gated GaN MOSFET on silicon substrate using AlGaN/GaN source/drain with high 2DEG density

High Performance in a Normally-off Al2O3/GaN MOSFET Based on an AlGaN/GaN Heterostructure with a p-GaN Buffer Layer

Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al 2 O 3 /GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing

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