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Analysis of gas phase compounds in chemical vapor deposition of carbon from light hydrocarbons

Carbon (New York), 2006-08, Vol.44 (9), p.1790-1800

2006

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Kinetics of surface reactions in carbon deposition from light hydrocarbons

Carbon (New York), 2003, Vol.41 (8), p.1509-1514

2003

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Microstructure of SiC deposited from methyltrichlorosilane

Journal of the European Ceramic Society, 2003-08, Vol.23 (9), p.1499-1508

2003

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Mechanisms of carbon deposition—a kinetic approach

Carbon (New York), 2002-01, Vol.40 (4), p.624-628

2002

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CVD in Hot Wall Reactors-The Interaction Between Homogeneous Gas-Phase and Heterogeneous Surface Reactions

Chemical vapor deposition, 1998-07, Vol.4 (4), p.151-158

Hüttinger, Klaus J.

1998

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Chemistry and kinetics of chemical vapor deposition of pyrocarbon: VIII. Carbon deposition from methane at low pressures

Carbon (New York), 2001, Vol.39 (3), p.433-441

2001

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Chemical vapor infiltration of carbon – revised: Part I: Model simulations

Carbon (New York), 2001-01, Vol.39 (7), p.1013-1022

2001

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Simulation studies on chemical vapor infiltration of carbon

Composites science and technology, 2002-11, Vol.62 (15), p.1947-1955

2002

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Kinetics of mesophase formation in a stirred tank reactor and properties of the products—II. Discontinuous reactor

Carbon (New York), 1992, Vol.30 (1), p.1-8

1992

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Chemical vapor infiltration of carbon — revised: Part II: Experimental results

Carbon (New York), 2001-01, Vol.39 (7), p.1023-1032

2001

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CVD of SiC from Methyltrichlorosilane. Part I: Deposition Rates

Chemical vapor deposition, 2001-07, Vol.7 (4), p.167-172

2001

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A method for the determination of active sites and true activation energies in carbon gasification: (1) Theoretical treatment

Carbon (New York), 1990, Vol.28 (4), p.453-456

Hüttinger, Klaus J.

1990

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Modeling of the apparent viscosity of pitches and mesophases at linear temperature increase up to 500°C

Carbon (New York), 1993, Vol.31 (2), p.263-268

1993

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A method for the determination of active sites and true activation energies in carbon gasification: (II) Experimental results

Carbon (New York), 1990, Vol.28 (4), p.457-465

1990

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Kinetics of mesophase formation in a stirred tank reactor and properties of the products

Carbon (New York), 1991, Vol.29 (3), p.439-448

1991

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Chemical vapour deposition in hot-wall reactors: the role of the ratio of substrate surface area to reactor volume

High temperatures. High pressures, 2000, Vol.32 (6), p.725-736

2000

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Mechanism of water vapor gasification at high hydrogen levels

Carbon (New York), 1988, Vol.26 (1), p.79-87

Hüttinger, Klaus J.

1988

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Kinetics of mesophase formation in a stirred tank reactor and properties of the products—III. Continuous reactor

Carbon (New York), 1992, Vol.30 (1), p.9-15

1992

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A method for the determination of the acid-base interactions and the work of adhesion at a solid-liquid interface

Journal of adhesion science and technology, 1992-01, Vol.6 (3), p.317-331

1992

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Chemical vapor infiltration of carbon – revised

Carbon (New York), 2001-06, Vol.39 (7), p.1013-1022

2001

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Chemical vapor infiltration of carbon — revised

Carbon (New York), 2001-06, Vol.39 (7), p.1023-1032

2001

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Steam gasification of naphthalene as a model reaction of homogeneous gas/gas reactions during coal gasification

Fuel (Guildford), 1989-10, Vol.68 (10), p.1300-1310

1989

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Chemistry and kinetics of chemical vapor deposition of pyrocarbon

Carbon (New York), 2001-03, Vol.39 (3), p.433-441

2001

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CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Chemical vapor deposition, 2001-07, Vol.7 (4), p.173-181

2001

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Kinetics of mesophase formation in a stirred tank reactor and properties of the products—V. Catalysis by ferrocene

Carbon (New York), 1994, Vol.32 (6), p.1073-1085

1994

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Analysis of gas phase compounds in chemical vapor deposition of carbon from light hydrocarbons

Kinetics of surface reactions in carbon deposition from light hydrocarbons

Microstructure of SiC deposited from methyltrichlorosilane

Mechanisms of carbon deposition—a kinetic approach

CVD in Hot Wall Reactors-The Interaction Between Homogeneous Gas-Phase and Heterogeneous Surface Reactions

Chemistry and kinetics of chemical vapor deposition of pyrocarbon: VIII. Carbon deposition from methane at low pressures

Chemical vapor infiltration of carbon – revised: Part I: Model simulations

Simulation studies on chemical vapor infiltration of carbon

Kinetics of mesophase formation in a stirred tank reactor and properties of the products—II. Discontinuous reactor

Chemical vapor infiltration of carbon — revised: Part II: Experimental results

CVD of SiC from Methyltrichlorosilane. Part I: Deposition Rates

A method for the determination of active sites and true activation energies in carbon gasification: (1) Theoretical treatment

Modeling of the apparent viscosity of pitches and mesophases at linear temperature increase up to 500°C

A method for the determination of active sites and true activation energies in carbon gasification: (II) Experimental results

Kinetics of mesophase formation in a stirred tank reactor and properties of the products

Chemical vapour deposition in hot-wall reactors: the role of the ratio of substrate surface area to reactor volume

Mechanism of water vapor gasification at high hydrogen levels

Kinetics of mesophase formation in a stirred tank reactor and properties of the products—III. Continuous reactor

A method for the determination of the acid-base interactions and the work of adhesion at a solid-liquid interface

Chemical vapor infiltration of carbon – revised

Chemical vapor infiltration of carbon — revised

Steam gasification of naphthalene as a model reaction of homogeneous gas/gas reactions during coal gasification

Chemistry and kinetics of chemical vapor deposition of pyrocarbon

CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Kinetics of mesophase formation in a stirred tank reactor and properties of the products—V. Catalysis by ferrocene

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