UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction

ACS omega, 2018-05, Vol.3 (5), p.5522-5530

2018

Volltextzugriff (PDF)

A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C - V Characteristics in Exfoliated MoS2 FET

IEEE electron device letters, 2016-02, Vol.37 (2), p.231-233

2016

Volltextzugriff (PDF)

Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction

Nano letters, 2020-08, Vol.20 (8), p.5741-5748

2020

Volltextzugriff (PDF)

Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric

2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, p.295-298

2016

Volltextzugriff (PDF)

Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction

Journal of physics. D, Applied physics, 2018-10, Vol.51 (47)

2018

Volltextzugriff (PDF)

Si–MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power

ACS applied materials & interfaces, 2019-02, Vol.11 (7), p.7626-7634

2019

Volltextzugriff (PDF)

Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

ACS applied materials & interfaces, 2018-11, Vol.10 (46), p.40212-40218

2018

Volltextzugriff (PDF)

Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating

ACS applied materials & interfaces, 2020-08, Vol.12 (34), p.38563-38569

2020

Volltextzugriff (PDF)

Si–MoS 2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power

ACS applied materials & interfaces, 2019-02, Vol.11 (7), p.7626-7634

2019

Volltextzugriff (PDF)

Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric

Advanced functional materials, 2017-11, Vol.27 (43), p.n/a

2017

Volltextzugriff (PDF)

Ultrasensitive Phototransistor Based on WSe 2 –MoS 2 van der Waals Heterojunction

Nano letters, 2020-08, Vol.20 (8), p.5741-5748

2020

Volltextzugriff (PDF)

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials

Nanoscale, 2018-08, Vol.10 (32), p.15205-15212

2018

Volltextzugriff (PDF)

Probing temperature-dependent interlayer coupling in a MoS2/h-BN heterostructure

Nano research, 2020-02, Vol.13 (2), p.576-582

2020

Volltextzugriff (PDF)

Ultrasensitive WSe2/α‐In2Se3 NIR Photodetector Based on Ferroelectric Gating Effect

Advanced materials technologies, 2021-11, Vol.6 (11), p.n/a

2021

Volltextzugriff (PDF)

Atomically thin Schottky junction with a gap-mode plasmon for enhanced photoresponsivity in MoS 2 -based photodetectors

Journal of physics. D, Applied physics, 2021-04, Vol.54 (14), p.145301

2021

Volltextzugriff (PDF)

Atomically thin Schottky junction with a gap-mode plasmon for enhanced photoresponsivity in MoS2-based photodetectors

Journal of physics. D, Applied physics, 2021-04, Vol.54 (14)

2021

Volltextzugriff (PDF)

High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure

ACS applied materials & interfaces, 2020-01, Vol.12 (4), p.5106-5112

2020

Volltextzugriff (PDF)

Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric

Advanced electronic materials, 2020-07, Vol.6 (7), p.n/a

2020

Volltextzugriff (PDF)

Photoconductivity Switching in MoTe 2 /Graphene Heterostructure by Trap-Assisted Photogating

ACS applied materials & interfaces, 2020-08, Vol.12 (34), p.38563-38569

2020

Volltextzugriff (PDF)

Vertical-tunneling field-effect transistor based on MoTe 2 /MoS 2 2D–2D heterojunction

Journal of physics. D, Applied physics, 2018-11, Vol.51 (47), p.475101

2018

Volltextzugriff (PDF)

Atomically thin heterostructure with gap-mode plasmon for overcoming trade-off between photoresponsivity and response time

Nano research, 2021-05, Vol.14 (5), p.1305-1310

2021

Volltextzugriff (PDF)

Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS 2 Three-Dimensional-Two-Dimensional Heterostructure

ACS applied materials & interfaces, 2018-11, Vol.10 (46), p.40212-40218

2018

Volltextzugriff (PDF)

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materialsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr02451k

2018-08

Volltextzugriff (PDF)

Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide

2d materials, 2016-08, Vol.3 (3)

2016

Volltextzugriff (PDF)

High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS 2 van der Waals Heterostructure

ACS applied materials & interfaces, 2020-01, Vol.12 (4), p.5106-5112

2020

Volltextzugriff (PDF)

1 – 25 von 87

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(67)
Mit Volltextzugriff
(83)

Publikationsform

Sprache

Englisch
(72)
Koreanisch
(13)

Erscheinungsjahr

n.n

Thema

Science & Technology
(36)
Technology
(16)
Life Sciences & Biomedicine
(15)
Materials Science
(15)
Materials Science, Multidisciplinary
(14)
Physical Sciences
(11)
Science & Technology - Other Topics
(11)
Nanoscience & Nanotechnology
(10)
Physics
(9)
Physics, Applied
(9)
Chemistry
(7)
Humans
(7)
Lymphatic Metastasis
(7)
Mos
(7)
Endoscopic Mucosal Resection
(6)
Male
(6)
Molybdenum Disulfide
(6)
Stomach Neoplasms
(6)
Undifferentiated-Type Histology
(6)
Chemical Vapor Deposition
(5)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction

A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C - V Characteristics in Exfoliated MoS2 FET

Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction

Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric

Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction

Si–MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power

Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating

Si–MoS 2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power

Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric

Ultrasensitive Phototransistor Based on WSe 2 –MoS 2 van der Waals Heterojunction

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials

Probing temperature-dependent interlayer coupling in a MoS2/h-BN heterostructure

Ultrasensitive WSe2/α‐In2Se3 NIR Photodetector Based on Ferroelectric Gating Effect

Atomically thin Schottky junction with a gap-mode plasmon for enhanced photoresponsivity in MoS 2 -based photodetectors

Atomically thin Schottky junction with a gap-mode plasmon for enhanced photoresponsivity in MoS2-based photodetectors

High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure

Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric

Photoconductivity Switching in MoTe 2 /Graphene Heterostructure by Trap-Assisted Photogating

Vertical-tunneling field-effect transistor based on MoTe 2 /MoS 2 2D–2D heterojunction

Atomically thin heterostructure with gap-mode plasmon for overcoming trade-off between photoresponsivity and response time

Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS 2 Three-Dimensional-Two-Dimensional Heterostructure

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materialsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr02451k

Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide

High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS 2 van der Waals Heterostructure

Suchergebnisse filtern