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Critical thickness of atomically ordered III-V alloys

Applied physics letters, 2015-10, Vol.107 (15)

2015

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Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

Applied physics letters, 2016-06, Vol.108 (26)

2016

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Explanation of red spectral shifts at CdTe grain boundaries

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Understanding the charge transport mechanisms through ultrathin SiO x layers in passivated contacts for high-efficiency silicon solar cells

Applied physics letters, 2019-02, Vol.114 (8)

2019

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Optical response of grain boundaries in upgraded metallurgical-grade silicon for photovoltaics

Solar energy materials and solar cells, 2011-08, Vol.95 (8), p.2497-2501

2011

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Local electrical degradations of solid-state electrolyte by nm-scale operando imaging of ionic and electronic transports

Journal of power sources, 2020-11, Vol.481

2020

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Metal-Insulator-Metal Diodes: Role of the Insulator Layer on the Rectification Performance

Advanced materials (Weinheim), 2013-03, Vol.25 (9), p.1301-1308

2013

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Pinhole electrical conductivity in polycrystalline Si on locally etched SiNy/SiOx passivating contacts for Si solar cells

Materials science in semiconductor processing, 2023-10, Vol.165, Article 107655

2023

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Local electrical degradations of solid-state electrolyte by nm-scale operando imaging of ionic and electronic transports

Journal of power sources, 2021-01, Vol.481 (C), p.229138, Article 229138

2021

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Critical thickness of atomically ordered III-V alloys

Applied physics letters, 2015-10, Vol.107 (15)

2015

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Critical thickness of atomically ordered III-V alloys

Applied physics letters, 2015-10, Vol.107 (15)

2015

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Stacking Faults Originating from Star-Defects in 4H-SiC

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2023-06, Vol.426, p.29-33

2023

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Understanding SiO x Layer Breakup in poly-Si/SiO x Passivating Contacts for Si Solar Cells Using Precisely Engineered Surface Textures

ACS applied energy materials, 2022-03, Vol.5 (3), p.3043-3051

2022

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Cathodoluminescence Analysis of Grain Boundaries and Grain Interiors in Thin-Film CdTe

IEEE journal of photovoltaics, 2014-11, Vol.4 (6), p.1671-1679

2014

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Investigating Electric Field and Light Induced Degradation in Perovskite Solar Cells Through Nanometer-Scale Potential Imaging

2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), 2023, p.1-6

2023

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Toward film-silicon solar cells on display glass

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.000626-000630

2010

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Correlating Multicrystalline Silicon Defect Types Using Photoluminescence, Defect-band Emission, and Lock-in Thermography Imaging Techniques

IEEE journal of photovoltaics, 2014-01, Vol.4 (1), p.348-354

2014

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Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl{sub 2}

Applied physics letters, 2016-06, Vol.108 (26)

2016

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Luminescence from poly-Si films and its application to study passivating-contact solar cells

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, p.2325-2328

2019

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Characterization of Photovoltaics: From Cells Properties to Atoms

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.952-953

2014

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Dislocation-limited open circuit voltage in film crystal silicon solar cells

Applied physics letters, 2012-09, Vol.101 (12)

2012

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Device Physics of Heteroepitaxial Film c-Si Heterojunction Solar Cells

IEEE journal of photovoltaics, 2013-01, Vol.3 (1), p.230-235

2013

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Reduced dislocation density in Ga^sub x^In^sub 1−x^P compositionally graded buffer layers through engineered glide plane switch

Journal of crystal growth, 2017-04, Vol.464, p.20

2017

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Cathodoluminescence study of carrier transport across grain boundaries in CdTe

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.0869-0872

2014

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Quantification of atomic scale defects in poly Si PV devices using atom probe tomography

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.001498-001500

2012

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Critical thickness of atomically ordered III-V alloys

Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

Explanation of red spectral shifts at CdTe grain boundaries

Understanding the charge transport mechanisms through ultrathin SiO x layers in passivated contacts for high-efficiency silicon solar cells

Optical response of grain boundaries in upgraded metallurgical-grade silicon for photovoltaics

Local electrical degradations of solid-state electrolyte by nm-scale operando imaging of ionic and electronic transports

Metal-Insulator-Metal Diodes: Role of the Insulator Layer on the Rectification Performance

Pinhole electrical conductivity in polycrystalline Si on locally etched SiNy/SiOx passivating contacts for Si solar cells

Local electrical degradations of solid-state electrolyte by nm-scale operando imaging of ionic and electronic transports

Critical thickness of atomically ordered III-V alloys

Critical thickness of atomically ordered III-V alloys

Stacking Faults Originating from Star-Defects in 4H-SiC

Understanding SiO x Layer Breakup in poly-Si/SiO x Passivating Contacts for Si Solar Cells Using Precisely Engineered Surface Textures

Cathodoluminescence Analysis of Grain Boundaries and Grain Interiors in Thin-Film CdTe

Investigating Electric Field and Light Induced Degradation in Perovskite Solar Cells Through Nanometer-Scale Potential Imaging

Toward film-silicon solar cells on display glass

Correlating Multicrystalline Silicon Defect Types Using Photoluminescence, Defect-band Emission, and Lock-in Thermography Imaging Techniques

Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl{sub 2}

Luminescence from poly-Si films and its application to study passivating-contact solar cells

Characterization of Photovoltaics: From Cells Properties to Atoms

Dislocation-limited open circuit voltage in film crystal silicon solar cells

Device Physics of Heteroepitaxial Film c-Si Heterojunction Solar Cells

Reduced dislocation density in Ga^sub x^In^sub 1−x^P compositionally graded buffer layers through engineered glide plane switch

Cathodoluminescence study of carrier transport across grain boundaries in CdTe

Quantification of atomic scale defects in poly Si PV devices using atom probe tomography

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