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Low-defect-density SnSe2 films nucleated via thin layer crystallization

Journal of crystal growth, 2024-04, Vol.631, p.127615, Article 127615

2024

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Silicon layers atop iron silicide nanoislands on Si(100) substrate: Island formation, silicon growth, morphology and structure

Thin solid films, 2007-07, Vol.515 (20), p.7805-7812

2007

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Structural changes of MoS2 nano-powder in dependence on the annealing temperature

Applied physics. A, Materials science & processing, 2005-01, Vol.80 (1), p.61-67

2005

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Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

Physica. E, Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1), p.828-831

2000

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Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-02, Vol.122 (3), p.571-574

1997

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Effect of synthesis conditions on the structure and properties of new SiCxNyMz materials for spintronics

Žurnal strukturnoj himii, 2017, Vol.58 (8), p.1543-1552

2017

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Evolution of silicon nanoclusters and hydrogen in SiNx:H films: Influence of high hydrostatic pressure under annealing

Thin solid films, 2012-07, Vol.520 (19), p.6207-6214

2012

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Ge and GexSi1−x islands formation on GexSi1−x solid solution surface

Thin solid films, 2012-02, Vol.520 (8), p.3319-3321

2012

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MORPHOLOGICAL AND CHEMICAL CHARACTERIZATION OF MAGNESIUM PHOSPHATE AND CALCIUM PHOSPHATE BIONS

Siberian Medical Review, 2019, Vol.3 (3), p.34-42

2019

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Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy

Journal of crystal growth, 2005-02, Vol.274 (3-4), p.339-346

2005

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High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

Journal of crystal growth, 2011-12, Vol.337 (1), p.93-96

2011

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High-quality structures with InAs/Al 0.9Ga 0.1As QDs produced by droplet epitaxy

Journal of crystal growth, 2011, Vol.337 (1), p.93-96

2011

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Defects in the crystal structure of [Cd.sub.x][Hg.sub.1 - x]Te layers grown on the Si substrates

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7), p.926

2011

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The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clusters

Thin solid films, 2008-11, Vol.517 (1), p.69-70

2008

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Optical vibrational modes in (Cd, Pb, Zn)S quantum dots embedded in Langmuir–Blodgett matrices

Thin solid films, 2002-12, Vol.422 (1), p.200-204

2002

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Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-08, Vol.222 (3-4), p.497-504

2004

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Properties of silicon oversaturated with implanted hydrogen

Thin solid films, 2002-02, Vol.403, p.500-504

2002

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Implantation of P ions in SiO 2 layers with embedded Si nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004, Vol.222 (3), p.497-504

2004

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Light particle irradiation effects in Si nanocrystals

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999, Vol.147 (1), p.356-360

1999

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HREM of epitaxial layers in the InAs/GaAs system

Ultramicroscopy, 1991, Vol.35 (1), p.11-18

1991

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Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructures

Microelectronic engineering, 1996-01, Vol.30 (1-4), p.439-442

1996

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Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy

Materials science in semiconductor processing, 2005-02, Vol.8 (1), p.47-50

2005

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Self-Assembled Islands in the (Ga,Al)As/InAs Heteroepitaxial System Studied by Raman Spectroscopy

physica status solidi (b), 2001-03, Vol.224 (1), p.25-29

2001

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Cleavage of thin films for X-HREM study of interface quality in heterostructures

Journal of crystal growth, 2000-03, Vol.210 (1), p.182-186

2000

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Stress relaxation by generation of L-shape misfit dislocations in (001) heterostructures with diamond and sphalerite lattices

Applied surface science, 2000-10, Vol.166 (1), p.57-60

2000

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Low-defect-density SnSe2 films nucleated via thin layer crystallization

Silicon layers atop iron silicide nanoislands on Si(100) substrate: Island formation, silicon growth, morphology and structure

Structural changes of MoS2 nano-powder in dependence on the annealing temperature

Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing

Effect of synthesis conditions on the structure and properties of new SiCxNyMz materials for spintronics

Evolution of silicon nanoclusters and hydrogen in SiNx:H films: Influence of high hydrostatic pressure under annealing

Ge and GexSi1−x islands formation on GexSi1−x solid solution surface

MORPHOLOGICAL AND CHEMICAL CHARACTERIZATION OF MAGNESIUM PHOSPHATE AND CALCIUM PHOSPHATE BIONS

Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy

High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

High-quality structures with InAs/Al 0.9Ga 0.1As QDs produced by droplet epitaxy

Defects in the crystal structure of [Cd.sub.x][Hg.sub.1 - x]Te layers grown on the Si substrates

The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clusters

Optical vibrational modes in (Cd, Pb, Zn)S quantum dots embedded in Langmuir–Blodgett matrices

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Properties of silicon oversaturated with implanted hydrogen

Implantation of P ions in SiO 2 layers with embedded Si nanocrystals

Light particle irradiation effects in Si nanocrystals

HREM of epitaxial layers in the InAs/GaAs system

Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructures

Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy

Self-Assembled Islands in the (Ga,Al)As/InAs Heteroepitaxial System Studied by Raman Spectroscopy

Cleavage of thin films for X-HREM study of interface quality in heterostructures

Stress relaxation by generation of L-shape misfit dislocations in (001) heterostructures with diamond and sphalerite lattices

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