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Visualization of Swift Ion Tracks in Suspended Local Diamondized Few-Layer Graphene

Materials, 2023-02, Vol.16 (4), p.1391

2023

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Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

Nanomaterials (Basel, Switzerland), 2022-12, Vol.12 (24), p.4449

2022

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Ion-Beam Synthesis of Structure-Oriented Iron Nanoparticles in Single-Crystalline Rutile TiO2

Crystals (Basel), 2023-02, Vol.13 (2), p.355

2023

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The Nature of Ferromagnetism in a System of Self-Ordered α-FeSi2 Nanorods on a Si(111)-4° Vicinal Surface: Experiment and Theory

Nanomaterials (Basel, Switzerland), 2022-10, Vol.12 (20), p.3707

2022

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The convenient preparation of stable aryl-coated zerovalent iron nanoparticles

Beilstein journal of nanotechnology, 2015-05, Vol.6 (1), p.1192-1198

2015

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Resistive switching on individual V2O5 nanoparticles encapsulated in fluorinated graphene films

Physical chemistry chemical physics : PCCP, 2021-09, Vol.23 (36), p.20434-20443

2021

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Different electrochemical responses of LiFe0.5Mn0.5PO4 prepared by mechanochemical and solvothermal methods

Journal of alloys and compounds, 2018-04, Vol.742, p.454-465

2018

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Hemozoin "knobs" in Opisthorchis felineus infected liver

Parasites & vectors, 2015-09, Vol.8 (1), p.459-459, Article 459

2015

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Transformation of the InP(001) surface upon annealing in an arsenic flux

Surface science, 2021-08, Vol.710, p.121861, Article 121861

2021

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Charge Berezinskii-Kosterlitz-Thouless transition in superconducting NbTiN films

Scientific reports, 2018-03, Vol.8 (1), p.4082-11, Article 4082

2018

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Synthesis of crystalline Mg2Si films by ultrafast deposition of Mg on Si(111) and Si(001) at high temperatures. Mg/Si intermixing and reaction mechanisms

Materials chemistry and physics, 2021-01, Vol.258, p.123903, Article 123903

2021

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Selective MOCVD synthesis of VO2 crystals on nanosharp Si structures

CrystEngComm, 2021-01, Vol.23 (2), p.443-452

2021

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A new approach to the fabrication of VO2 nanoswitches with ultra-low energy consumption

Nanoscale, 2020-02, Vol.12 (5), p.3443-3454

2020

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A new approach to the fabrication of VO 2 nanoswitches with ultra-low energy consumption

Nanoscale, 2020-02, Vol.12 (5), p.3443-3454

2020

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Fluorinated graphene suspension for flexible and printed electronics: Flakes, 2D films, and heterostructures

Materials & design, 2019-02, Vol.164, p.107526, Article 107526

2019

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Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots

Nanotechnology, 2020-05, Vol.31 (29), p.295602-295602

2020

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Ca silicide films—promising materials for silicon optoelectronics

Japanese Journal of Applied Physics, 2023-05, Vol.62 (SD), p.SD0803

2023

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Bimetallic Pt,Ir-containing coatings formed by MOCVD for medical applications

Journal of materials science. Materials in medicine, 2019-06, Vol.30 (6), p.69-12, Article 69

2019

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Formation and thermoelectric properties of the n- and p-type silicon nanostructures with embedded GaSb nanocrystals

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SF), p.SFFB04

2020

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LiVPO4F/Li3V2(PO4)3 nanostructured composite cathode materials prepared via mechanochemical way

Journal of solid state electrochemistry, 2014, Vol.18 (5), p.1389-1399

2014

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Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films

Applied physics letters, 2013-01, Vol.102 (4)

2013

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Synthesis and Characterization of Cu x S (x = 1–2) Nanocrystals Formed by the Langmuir–Blodgett Technique

Journal of physical chemistry. C, 2014-10, Vol.118 (40), p.23409-23414

2014

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The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

Microscopy and microanalysis, 2013-08, Vol.19 (S5), p.38-42

2013

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Resistive switching on individual V 2 O 5 nanoparticles encapsulated in fluorinated graphene films

Physical chemistry chemical physics : PCCP, 2021-09, Vol.23 (36), p.20434-20443

2021

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Resistive switching on individual VO nanoparticles encapsulated in fluorinated graphene films

Physical chemistry chemical physics : PCCP, 2021-09, Vol.23 (36), p.2434-2443

2021

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Visualization of Swift Ion Tracks in Suspended Local Diamondized Few-Layer Graphene

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

Ion-Beam Synthesis of Structure-Oriented Iron Nanoparticles in Single-Crystalline Rutile TiO2

The Nature of Ferromagnetism in a System of Self-Ordered α-FeSi2 Nanorods on a Si(111)-4° Vicinal Surface: Experiment and Theory

The convenient preparation of stable aryl-coated zerovalent iron nanoparticles

Resistive switching on individual V2O5 nanoparticles encapsulated in fluorinated graphene films

Different electrochemical responses of LiFe0.5Mn0.5PO4 prepared by mechanochemical and solvothermal methods

Hemozoin "knobs" in Opisthorchis felineus infected liver

Transformation of the InP(001) surface upon annealing in an arsenic flux

Charge Berezinskii-Kosterlitz-Thouless transition in superconducting NbTiN films

Synthesis of crystalline Mg2Si films by ultrafast deposition of Mg on Si(111) and Si(001) at high temperatures. Mg/Si intermixing and reaction mechanisms

Selective MOCVD synthesis of VO2 crystals on nanosharp Si structures

A new approach to the fabrication of VO2 nanoswitches with ultra-low energy consumption

A new approach to the fabrication of VO 2 nanoswitches with ultra-low energy consumption

Fluorinated graphene suspension for flexible and printed electronics: Flakes, 2D films, and heterostructures

Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots

Ca silicide films—promising materials for silicon optoelectronics

Bimetallic Pt,Ir-containing coatings formed by MOCVD for medical applications

Formation and thermoelectric properties of the n- and p-type silicon nanostructures with embedded GaSb nanocrystals

LiVPO4F/Li3V2(PO4)3 nanostructured composite cathode materials prepared via mechanochemical way

Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films

Synthesis and Characterization of Cu x S (x = 1–2) Nanocrystals Formed by the Langmuir–Blodgett Technique

The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

Resistive switching on individual V 2 O 5 nanoparticles encapsulated in fluorinated graphene films

Resistive switching on individual VO nanoparticles encapsulated in fluorinated graphene films

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