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Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-8

2023

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Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1608-1611

2022

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Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6465-6472

2023

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Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6602-6609

2022

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Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6934-6939

2022

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Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs-Part I

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.72-79

2021

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Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

Journal of applied physics, 2021-07, Vol.130 (1)

2021

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Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

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On the Channel Hot-Electron's Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4869-4876

2021

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Structural and Magnetic Variations in a Family of Isoskeletal, Oximate‐Bridged {MnIV2MIII} Complexes (MIII=Mn, Gd, Dy)

Chemistry : a European journal, 2018-02, Vol.24 (11), p.2588-2592

2018

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Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.80-87

2021

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Heteroleptic Copper(I)-Based Complexes Incorporating BINAP and π-Extended Diimines: Synthesis, Catalysis and Biological Applications

Molecules (Basel, Switzerland), 2022-06, Vol.27 (12), p.3745

2022

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Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5728-5735

2021

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Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6934-6939

2022

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6035-6042

2022

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UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

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Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6211-6216

2023

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Structural Diversities in Heterometallic Mn–Ca Cluster Chemistry from the Use of Salicylhydroxamic Acid: {MnIII 4Ca2}, {MnII/III 6Ca2}, {MnIII/IV 8Ca}, and {MnIII 8Ca2} Complexes with Relevance to Both High- and Low-Valent States of the Oxygen-Evolving Complex

Inorganic chemistry, 2017-09, Vol.56 (17), p.10760-10774

2017

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Unprecedented Calcium Metalla-macrocycle Having Phosphinoselenoic Amide and Diphenylphosphinate in the Coordination Sphere

Zeitschrift für anorganische und allgemeine Chemie (1950), 2014-04, Vol.640 (5), p.994-999

2014

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Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic \textit} Behavior in AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2023-12, p.1-0

2023

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022, p.1-8

2022

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Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

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Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6175-6182

2023

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Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6183-6189

2023

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Development of Novel Chemical Tools for Biological and Environmental Applications

Gupta, Sayak

2023

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Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance

Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si

Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State

Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs-Part I

Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

On the Channel Hot-Electron's Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

Structural and Magnetic Variations in a Family of Isoskeletal, Oximate‐Bridged {MnIV2MIII} Complexes (MIII=Mn, Gd, Dy)

Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs-Part II

Heteroleptic Copper(I)-Based Complexes Incorporating BINAP and π-Extended Diimines: Synthesis, Catalysis and Biological Applications

Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs-Part II

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities

Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes

Structural Diversities in Heterometallic Mn–Ca Cluster Chemistry from the Use of Salicylhydroxamic Acid: {MnIII 4Ca2}, {MnII/III 6Ca2}, {MnIII/IV 8Ca}, and {MnIII 8Ca2} Complexes with Relevance to Both High- and Low-Valent States of the Oxygen-Evolving Complex

Unprecedented Calcium Metalla-macrocycle Having Phosphinoselenoic Amide and Diphenylphosphinate in the Coordination Sphere

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic \textit} Behavior in AlGaN/GaN HEMTs-Part II

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II

Development of Novel Chemical Tools for Biological and Environmental Applications

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