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Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-11, Vol.11 (45), p.16026-16036

2023

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Effects of Oxygen Flow Rates on the Physical Characteristics of Magnetron Sputtered Single-Phase Polycrystalline Cu2O Films

Materials research (São Carlos, São Paulo, Brazil), 2020-01, Vol.23 (6), p.1

2020

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Effect of Sputtering Power on the Structural and Optical Properties of Inn Nanodots on Al2O3 by Magnetron Sputtering

Materials research (São Carlos, São Paulo, Brazil), 2019-01, Vol.22 (6)

2019

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Excellent electroluminescence and electrical characteristics from p-CuO/i-Ga2O3/n-GaN light-emitting diode prepared by magnetron sputtering

Journal of luminescence, 2022-03, Vol.243, p.118621, Article 118621

2022

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All-inorganic green light-emitting diode based on p-NiO/CsPbBr3/n-GaN heterojunction structure

Journal of luminescence, 2023-06, Vol.258, p.119826, Article 119826

2023

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Near-white light-emitting diode from p-CuO/n-GaN heterojunction with an i-CuO electron blocking layer

Journal of alloys and compounds, 2021-06, Vol.867, p.159145, Article 159145

2021

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Annealing temperature induced physical characteristics of CuO films grown by magnetron sputtering

Materials science in semiconductor processing, 2021-08, Vol.131, p.105883, Article 105883

2021

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The preparation of CuO film under different annealing atmospheres and investigation of the excellent electrical and undoped tunable electroluminescence characteristics of Au/i-CuO/n-GaN LED

Journal of alloys and compounds, 2024-02, Vol.973, p.172885, Article 172885

2024

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High storage and operational stability self-powered UV photodetector based on p-CuI/n-GaN heterojunction prepared by thermal evaporation method

Applied surface science, 2023-12, Vol.640, p.158397, Article 158397

2023

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Vacuum-deposited perovskite CsPbBr3 thin-films for temperature-stable Si based pure-green all-inorganic light-emitting diodes

Ceramics international, 2023-07, Vol.49 (13), p.21624-21633

2023

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Low current driven bidirectional violet light emitting diode based on p-GaN/n-InN heterojunction

Journal of luminescence, 2024-02, Vol.266, p.120295, Article 120295

2024

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Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Optics and laser technology, 2022-12, Vol.156, p.108470, Article 108470

2022

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Preparation of CuO films at different sputtering powers and the effect of operating temperatures on the photovoltaic characteristics of p-CuO/n-Si heterojunction

Vacuum, 2023-03, Vol.209, p.111769, Article 111769

2023

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Evolution of Frenkel defect pairs in β-Ga2O3 thin film with the introduction of oxygen and its application in GaN-based ultraviolet light-emitting diode

Journal of luminescence, 2023-09, Vol.261, p.119912, Article 119912

2023

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Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n-InN heterojunctions

Vacuum, 2024-02, Vol.220, p.112805, Article 112805

2024

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"Blue-free" orange ZnO-related light-emitting diode based on a natural interface layer of Ga2O3 and ZnGa2O4

Optics letters, 2023-07, Vol.48 (13), p.3571-3574

2023

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Pure ultraviolet light-emitting diode based on the p-NiO/i-NiO/n-GaN structure by magnetron sputtering

Optical materials, 2023-11, Vol.145, p.114452, Article 114452

2023

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The influence of deposition pressure on the physical properties of Ga2O3 films and the high responsivity self-powered DUV photodetector based on n-Ga2O3/CuO/p-GaN heterojunction

Optics and laser technology, 2025-01, Vol.180, p.111533, Article 111533

2025

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Preparation of InN films at different substrate temperatures and the effect of operating temperatures on the carrier transmission characteristics of p-NiO/n-InN heterojunction

Vacuum, 2021-12, Vol.194, p.110583, Article 110583

2021

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Thermal optimization of defected Cu2O photon-absorbing layer and the steady p-Cu2O/n-Si photovoltaic application

Vacuum, 2022-04, Vol.198, p.110876, Article 110876

2022

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"Blue-free" orange ZnO-related light-emitting diode based on a natural interface layer of Ga 2 O 3 and ZnGa 2 O 4

Optics letters, 2023-07, Vol.48 (13), p.3571

2023

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Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Vacuum, 2024-02, Vol.220, p.112833, Article 112833

2024

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Investigation of sputtering pressure on physical properties of CuO films and the electrical properties-temperature relationship of CuO films and p-CuO/n-GaN heterojunction

Materials science in semiconductor processing, 2022-12, Vol.152, p.107082, Article 107082

2022

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Preparation of AlN thin film and the impacts of AlN buffer layer on the carrier transport properties of p-NiO/n-InN heterojunction by magnetron sputtering

Materials science in semiconductor processing, 2022-04, Vol.141, p.106417, Article 106417

2022

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Enhanced ultraviolet electroluminescence performance from p-NiO/n-GaN heterojunctions by using i-Ga2O3 as electron blocking layer

Optik (Stuttgart), 2022-07, Vol.262, p.169362, Article 169362

2022

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Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

Effects of Oxygen Flow Rates on the Physical Characteristics of Magnetron Sputtered Single-Phase Polycrystalline Cu2O Films

Effect of Sputtering Power on the Structural and Optical Properties of Inn Nanodots on Al2O3 by Magnetron Sputtering

Excellent electroluminescence and electrical characteristics from p-CuO/i-Ga2O3/n-GaN light-emitting diode prepared by magnetron sputtering

All-inorganic green light-emitting diode based on p-NiO/CsPbBr3/n-GaN heterojunction structure

Near-white light-emitting diode from p-CuO/n-GaN heterojunction with an i-CuO electron blocking layer

Annealing temperature induced physical characteristics of CuO films grown by magnetron sputtering

The preparation of CuO film under different annealing atmospheres and investigation of the excellent electrical and undoped tunable electroluminescence characteristics of Au/i-CuO/n-GaN LED

High storage and operational stability self-powered UV photodetector based on p-CuI/n-GaN heterojunction prepared by thermal evaporation method

Vacuum-deposited perovskite CsPbBr3 thin-films for temperature-stable Si based pure-green all-inorganic light-emitting diodes

Low current driven bidirectional violet light emitting diode based on p-GaN/n-InN heterojunction

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Preparation of CuO films at different sputtering powers and the effect of operating temperatures on the photovoltaic characteristics of p-CuO/n-Si heterojunction

Evolution of Frenkel defect pairs in β-Ga2O3 thin film with the introduction of oxygen and its application in GaN-based ultraviolet light-emitting diode

Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n-InN heterojunctions

"Blue-free" orange ZnO-related light-emitting diode based on a natural interface layer of Ga2O3 and ZnGa2O4

Pure ultraviolet light-emitting diode based on the p-NiO/i-NiO/n-GaN structure by magnetron sputtering

The influence of deposition pressure on the physical properties of Ga2O3 films and the high responsivity self-powered DUV photodetector based on n-Ga2O3/CuO/p-GaN heterojunction

Preparation of InN films at different substrate temperatures and the effect of operating temperatures on the carrier transmission characteristics of p-NiO/n-InN heterojunction

Thermal optimization of defected Cu2O photon-absorbing layer and the steady p-Cu2O/n-Si photovoltaic application

"Blue-free" orange ZnO-related light-emitting diode based on a natural interface layer of Ga 2 O 3 and ZnGa 2 O 4

Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Investigation of sputtering pressure on physical properties of CuO films and the electrical properties-temperature relationship of CuO films and p-CuO/n-GaN heterojunction

Preparation of AlN thin film and the impacts of AlN buffer layer on the carrier transport properties of p-NiO/n-InN heterojunction by magnetron sputtering

Enhanced ultraviolet electroluminescence performance from p-NiO/n-GaN heterojunctions by using i-Ga2O3 as electron blocking layer

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