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The effect of postannealing on the electrical properties of well-aligned n -ZnO nanorods/ p -Si heterojunction

Journal of applied physics, 2009-06, Vol.105 (11), p.114504-114504-5

2009

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The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method

Applied physics. A, Materials science & processing, 2009-03, Vol.94 (4), p.775-780

2009

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Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Thin solid films, 2009-06, Vol.517 (16), p.4689-4693

2009

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Superior thermal stability of Ta/TaN bi-layer structure for copper metallization

Applied surface science, 2006-11, Vol.253 (3), p.1666-1672

2006

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Cu adhesion on tantalum and ruthenium surface: Density functional theory study

Journal of applied physics, 2010-05, Vol.107 (10), p.103534-103534-7

2010

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Direct Observation of Dipole Influence Induced by a Spin Coated Organic Interfacial Layer on Effective Schottky Barrier Height Modulation of Hg/Si Contact

IEEE electron device letters, 2014-02, Vol.35 (2), p.262-264

2014

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Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Journal of applied physics, 2007-10, Vol.102 (8)

2007

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Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier： an improved Schottky rectifier with better reverse characteristics

Chinese physics B, 2011-08, Vol.20 (8), p.376-383

2011

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Simulation of transport properties in mid-infrared quantum cascade lasers: Simulation of transport properties in mid-infrared quantum cascade lasers

Hong wai yu hao mi bo xue bao, 2012-12, Vol.31 (6), p.486-490

2012

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Nickel silicidation on n and p-type junctions at 300°C

Applied physics letters, 2004-07, Vol.85 (3), p.410-412

2004

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Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

Chinese physics B, 2010-09, Vol.19 (9), p.548-558, Article 097304

茹国平俞融蒋玉龙阮刚

2010

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Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization

Applied physics letters, 2006-04, Vol.88 (15)

2006

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Effects of preannealing on the diffusion barrier properties for ultrathin W–Si–N thin film

Thin solid films, 2004-09, Vol.462 (Complete), p.67-71

2004

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Simulation of quantum cascade lasers

Journal of applied physics, 2011-11, Vol.110 (9), p.093109-093109-7

2011

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Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure

Microelectronic engineering, 2011-05, Vol.88 (5), p.573-577

2011

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The influence of ZnO seed layers on n-ZnO nanostructure/p-GaN LEDs

Applied physics. A, Materials science & processing, 2012-11, Vol.109 (2), p.489-495

2012

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Study of nickel silicide formation on Si(1 1 0) substrate

Applied surface science, 2011-10, Vol.257 (24), p.10571-10575

2011

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Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films

Chinese physics letters, 2007-05, Vol.24 (5), p.1400-1402

2007

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Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

Microelectronic engineering, 2013-06, Vol.106, p.121-124

2013

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Annealing induced hysteresis suppression for TiN/HfO2/GeON/p-Ge capacitor

Semiconductor science and technology, 2011-12, Vol.26 (12), p.125003

2011

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The properties of Ru on Ta-based barriers

Thin solid films, 2006-05, Vol.504 (1), p.231-234

2006

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Schottky barrier height lowering induced by CoSi2 nanostructure

Applied physics. A, Materials science & processing, 2010-04, Vol.99 (1), p.93-98

2010

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Cu contact on NiSi/Si with thin Ru/TaN barrier

Microelectronic engineering, 2011-05, Vol.88 (5), p.545-547

2011

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Patterned ZnO nanorods network transistor fabricated by low-temperature hydrothermal process

Microelectronic engineering, 2010-05, Vol.87 (5), p.1483-1486

2010

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Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

Semiconductor science and technology, 2005-08, Vol.20 (8), p.716-719

2005

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The effect of postannealing on the electrical properties of well-aligned n -ZnO nanorods/ p -Si heterojunction

The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method

Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Superior thermal stability of Ta/TaN bi-layer structure for copper metallization

Cu adhesion on tantalum and ruthenium surface: Density functional theory study

Direct Observation of Dipole Influence Induced by a Spin Coated Organic Interfacial Layer on Effective Schottky Barrier Height Modulation of Hg/Si Contact

Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier： an improved Schottky rectifier with better reverse characteristics

Simulation of transport properties in mid-infrared quantum cascade lasers: Simulation of transport properties in mid-infrared quantum cascade lasers

Nickel silicidation on n and p-type junctions at 300°C

Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization

Effects of preannealing on the diffusion barrier properties for ultrathin W–Si–N thin film

Simulation of quantum cascade lasers

Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure

The influence of ZnO seed layers on n-ZnO nanostructure/p-GaN LEDs

Study of nickel silicide formation on Si(1 1 0) substrate

Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films

Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

Annealing induced hysteresis suppression for TiN/HfO2/GeON/p-Ge capacitor

The properties of Ru on Ta-based barriers

Schottky barrier height lowering induced by CoSi2 nanostructure

Cu contact on NiSi/Si with thin Ru/TaN barrier

Patterned ZnO nanorods network transistor fabricated by low-temperature hydrothermal process

Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

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