UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 45

Sortiert nach

Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4

Science (American Association for the Advancement of Science), 2020-02, Vol.367 (6480), p.895-900

2020

Volltextzugriff (PDF)

High‐Performance Wafer‐Scale MoS2 Transistors toward Practical Application

Small (Weinheim an der Bergstrasse, Germany), 2018-11, Vol.14 (48), p.e1803465-n/a

2018

Volltextzugriff (PDF)

Variable spin-charge conversion across metal-insulator transition

Nature communications, 2020-01, Vol.11 (1), p.476-476, Article 476

2020

Volltextzugriff (PDF)

Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application

Advanced functional materials, 2019-01, Vol.29 (4), p.n/a

2019

Volltextzugriff (PDF)

Ultra-sensitive graphene photodetector with plasmonic structure

Applied physics letters, 2016-10, Vol.109 (17)

2016

Volltextzugriff (PDF)

MoS2 dual-gate transistors with electrostatically doped contacts

Nano research, 2019-10, Vol.12 (10), p.2515-2519

2019

Volltextzugriff (PDF)

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

Advanced science, 2018-09, Vol.5 (9), p.1800237-n/a

2018

Volltextzugriff (PDF)

Charge transport and quantum confinement in MoS2 dual-gated transistors

Journal of semiconductors, 2020-07, Vol.41 (7), p.45-49

2020

Volltextzugriff (PDF)

A new device architecture based on two dimensional van der Waals heterostructures

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.674-677

2017

Volltextzugriff (PDF)

Progress of Large‐Scale Synthesis and Electronic Device Application of Two‐Dimensional Transition Metal Dichalcogenides

Small (Weinheim an der Bergstrasse, Germany), 2017-09, Vol.13 (35), p.n/a

2017

Volltextzugriff (PDF)

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

Chemistry of materials, 2019-08, Vol.31 (16), p.6105-6109

2019

Volltextzugriff (PDF)

MoS2/HfO2/Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection

Advanced functional materials, 2019-11, Vol.29 (46), p.n/a

2019

Volltextzugriff (PDF)

Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi 2 Te 4

Science (American Association for the Advancement of Science), 2020-02, Vol.367 (6480), p.895-900

2020

Volltextzugriff (PDF)

MoS 2 /HfO 2 /Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection

Advanced functional materials, 2019-11, Vol.29 (46)

2019

Volltextzugriff (PDF)

Integration of MoS2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Advanced optical materials, 2019-12, Vol.7 (23), p.n/a

2019

Volltextzugriff (PDF)

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Advanced electronic materials, 2021-07, Vol.7 (7), p.n/a

2021

Volltextzugriff (PDF)

Controlled Doping of Wafer‐Scale PtSe 2 Films for Device Application

Advanced functional materials, 2019-01, Vol.29 (4)

2019

Volltextzugriff (PDF)

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

ACS applied electronic materials, 2020-01, Vol.2 (1), p.111-119

2020

Volltextzugriff (PDF)

High-Performance Wafer-Scale MoS 2 Transistors toward Practical Application

Small (Weinheim an der Bergstrasse, Germany), 2018-11, Vol.14 (48), p.e1803465

2018

Volltextzugriff (PDF)

Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices

Nano research, 2018-07, Vol.11 (7), p.3739-3745

2018

Volltextzugriff (PDF)

Integration of MoS 2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Advanced optical materials, 2019-12, Vol.7 (23)

2019

Volltextzugriff (PDF)

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Advanced electronic materials, 2019-07, Vol.5 (7), p.n/a

2019

Volltextzugriff (PDF)

Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Advanced electronic materials, 2021-07, Vol.7 (7)

2021

Volltextzugriff (PDF)

Charge transport and quantum confinement in MoS 2 dual-gated transistors

Journal of semiconductors, 2020-07, Vol.41 (7), p.72904

2020

Volltextzugriff (PDF)

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Advanced electronic materials, 2019-12, Vol.5 (12), p.n/a

2019

Volltextzugriff (PDF)

1 – 25 von 45

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(38)
Mit Volltextzugriff
(42)

Publikationsform

Artikel
(40)
Tagungsberichte
(5)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(29)
Technology
(18)
Physical Sciences
(14)
Materials Science
(13)
Materials Science, Multidisciplinary
(12)
Science & Technology - Other Topics
(11)
Mos
(9)
Nanoscience & Nanotechnology
(9)
Physics
(9)
Physics, Applied
(9)
Chemistry
(8)
Engineering
(8)
Chemistry, Physical
(7)
Life Sciences & Biomedicine
(7)
Molybdenum Disulfide
(6)
Chemistry, Multidisciplinary
(5)
Nanotechnology
(4)
Physics, Condensed Matter
(4)
Semiconductor Devices
(4)
2d Materials
(3)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4

High‐Performance Wafer‐Scale MoS2 Transistors toward Practical Application

Variable spin-charge conversion across metal-insulator transition

Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application

Ultra-sensitive graphene photodetector with plasmonic structure

MoS2 dual-gate transistors with electrostatically doped contacts

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

Charge transport and quantum confinement in MoS2 dual-gated transistors

A new device architecture based on two dimensional van der Waals heterostructures

Progress of Large‐Scale Synthesis and Electronic Device Application of Two‐Dimensional Transition Metal Dichalcogenides

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

MoS2/HfO2/Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection

Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi 2 Te 4

MoS 2 /HfO 2 /Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection

Integration of MoS2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Controlled Doping of Wafer‐Scale PtSe 2 Films for Device Application

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

High-Performance Wafer-Scale MoS 2 Transistors toward Practical Application

Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices

Integration of MoS 2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Charge transport and quantum confinement in MoS 2 dual-gated transistors

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Suchergebnisse filtern