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Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation

Nature materials, 2011-06, Vol.10 (7), p.539-544

2011

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Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes

Energy & environmental science, 2013-08, Vol.6 (8), p.2487

2013

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Electrical and Thermal Conduction in Atomic Layer Deposition Nanobridges Down to 7 nm Thickness

Nano letters, 2012-02, Vol.12 (2), p.683-686

2012

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Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

Applied physics letters, 2012-12, Vol.101 (24)

2012

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Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation

Journal of applied physics, 2011-01, Vol.109 (1)

2011

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EOT Scaling of / on Germanium pMOSFETs and Impact of Gate Metal Selection

IEEE electron device letters, 2013-06, Vol.34 (6), p.732-734

2013

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Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Applied physics letters, 2011-12, Vol.99 (23), p.232902-232902-3

2011

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EOT Scaling of TiO2/Al2O3 on Germanium pMOSFETs and Impact of Gate Metal Selection

IEEE electron device letters, 2013-06, Vol.34 (6), p.732-734

2013

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EOT Scaling of rm TiO 2 / rm Al 2 rm O 3 on Germanium pMOSFETs and Impact of Gate Metal Selection

IEEE electron device letters, 2013-06, Vol.34 (6), p.732-734

2013

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Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metalinsulatorsilicon anodesElectronic supplementary information (ESI) available. See DOI: 10.1039/c3ee41178h

2013-07

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Effects of catalyst material and atomic layer deposited TiO sub(2) oxide thickness on the water oxidation performance of metal-insulator-silicon anodes

Energy & environmental science, 2013-07, Vol.6 (8), p.2487-2496

2013

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Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals

Physical review. B, Condensed matter and materials physics, 2010-06, Vol.81 (23), Article 235317

2010

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Strain relaxation mechanisms in compressively strained thinSiGe-on-insulator films grown by selective Si oxidation

Journal of applied physics, 2011-01, Vol.109 (1), p.014324-014324-6

2011

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ALD-TiO 2 Preparation and Characterization for Metal-Insulator-Silicon Photoelectrochemical Applications

ECS transactions, 2013-08, Vol.58 (10), p.75-86

2013

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Nanostructured SiGe and Ge for Future Electronic Devices

Gunji, Marika

2012

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Enhanced oxygen exchange near the oxide/silicon interface during silicon thermal oxidation

Thin solid films, 2007-06, Vol.515 (16), p.6596-6600

2007

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Oxygen Self-Diffusion in Silicon Dioxide: Effect of the Si/SiO2 Interface

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2006-10, Vol.258-260, p.554-561

2006

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Direct-gap photoluminescence from germanium nanowires

Physical review. B, Condensed matter and materials physics, 2012-07, Vol.86 (3), Article 035306

2012

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ALD-TiO 2 Preparation and Characterization for Metal-Insulator-Silicon Photoelectrochemical Applications

Meeting abstracts (Electrochemical Society), 2013-10, Vol.MA2013-02 (24), p.1869-1869

2013

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Ultrathin TiO 2 on Si: Anode and Catalyst Durability

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (6), p.355-355

2010

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Atomic Layer Deposited TiO 2 on Si: A Corrosion Resistant (Photo)anode for Water Oxidation

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (6), p.462-462

2010

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Endothelial receptor tyrosine kinases activate the STAT signaling pathway : mutant Tie-2 causing venous malformations signals a distinct STAT activation response

Oncogene, 1999-01, Vol.18 (1), p.1-8

1999

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Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation

Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes

Electrical and Thermal Conduction in Atomic Layer Deposition Nanobridges Down to 7 nm Thickness

Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation

EOT Scaling of / on Germanium pMOSFETs and Impact of Gate Metal Selection

Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

EOT Scaling of TiO2/Al2O3 on Germanium pMOSFETs and Impact of Gate Metal Selection

EOT Scaling of rm TiO 2 / rm Al 2 rm O 3 on Germanium pMOSFETs and Impact of Gate Metal Selection

Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metalinsulatorsilicon anodesElectronic supplementary information (ESI) available. See DOI: 10.1039/c3ee41178h

Effects of catalyst material and atomic layer deposited TiO sub(2) oxide thickness on the water oxidation performance of metal-insulator-silicon anodes

Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals

Strain relaxation mechanisms in compressively strained thinSiGe-on-insulator films grown by selective Si oxidation

ALD-TiO 2 Preparation and Characterization for Metal-Insulator-Silicon Photoelectrochemical Applications

Nanostructured SiGe and Ge for Future Electronic Devices

Enhanced oxygen exchange near the oxide/silicon interface during silicon thermal oxidation

Oxygen Self-Diffusion in Silicon Dioxide: Effect of the Si/SiO2 Interface

Direct-gap photoluminescence from germanium nanowires

ALD-TiO 2 Preparation and Characterization for Metal-Insulator-Silicon Photoelectrochemical Applications

Ultrathin TiO 2 on Si: Anode and Catalyst Durability

Atomic Layer Deposited TiO 2 on Si: A Corrosion Resistant (Photo)anode for Water Oxidation

Endothelial receptor tyrosine kinases activate the STAT signaling pathway : mutant Tie-2 causing venous malformations signals a distinct STAT activation response

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