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Clinical management of COVID-19: Experiences of the COVID-19 epidemic from Groote Schuur Hospital, Cape Town, South Africa

SAMJ: South African Medical Journal, 2020-10, Vol.110 (10), p.973

2020

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Prolonged treatment of COVID-19 pneumonia with high-flow nasal oxygen: A story of oxygen and resilience

SAMJ: South African Medical Journal, 2020-12, Vol.110 (12), p.1168

2020

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Specific features of Stokes photoluminescence of the La2S3–Ga2S3–Er2S3 glasses

Optical materials, 2022-06, Vol.128, p.112394, Article 112394

2022

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P05.93 Adult medulloblastoma: analysis of use of chemotherapy in clinical practice

Neuro-oncology (Charlottesville, Va.), 2018-09, Vol.20 (suppl_3), p.iii325-iii325

2018

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Design and characterization of nanostructured SERS substrates based on gold nanostars

Semiconductor physics, quantum electronics, and optoelectronics, 2017-04, Vol.20 (1), p.41-47

Yukhymchuk, V.O.

2017

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Comparison of the synthesis routes for the ZnO/porous silica nanocomposite

Semiconductor physics, quantum electronics, and optoelectronics, 2016-12, Vol.19 (4), p.352-357

Rudko, G.Yu

2016

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Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method

Semiconductor physics, quantum electronics, and optoelectronics, 2015-03, Vol.18 (1), p.20-25

Rudko, G.

2015

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Thin films of Cu2ZnSnS4 for solar cells: optical and structural properties

Functional materials, 2013-06, Vol.20 (2), p.186-191

Babichuk, I.S.

2013

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Effect of erbium fluoride doping on the photoluminescence of SiOx films

Semiconductors (Woodbury, N.Y.), 2012-03, Vol.46 (3), p.323-329

2012

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Effect of erbium fluoride doping on the photoluminescence of SiO x films

Semiconductors (Woodbury, N.Y.), 2012-03, Vol.46 (3), p.323-329

2012

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Imperativeness of the use of Assure Model in Inclusive Agricultural Education in Nigerian Universities

International Journal of Education and Evaluation, 2023-08, Vol.8 (8), p.12-22

2023

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Effect of erbium fluoride doping on the photoluminescence of SiO{sub x} films

Semiconductors (Woodbury, N.Y.), 2012-03, Vol.46 (3)

2012

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Structural and Photoluminescence Properties of ZnO Nanowires

Ukrainian journal of physics (Kiev), 2012-01, Vol.57 (12), p.1239

2012

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Electronic states on silicon surface after deposition and annealing of SiOx films

Semiconductors (Woodbury, N.Y.), 2011-05, Vol.45 (5), p.587-592

2011

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Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO{sub x} Films after Low-Temperature Annealing

Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11)

2011

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Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiOx Films after Low-Temperature Annealing

Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11), p.1414-1419

2011

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Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO x Films after Low-Temperature Annealing

Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11), p.1414-1419

2011

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Erratum to: 'Electronic States on Silicon Surface after Deposition and Annealing of SiO{sub x} Films'

Semiconductors (Woodbury, N.Y.), 2011-06, Vol.45 (6)

2011

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Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films”

Semiconductors (Woodbury, N.Y.), 2011-06, Vol.45 (6), p.836-836

2011

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Electronic states on silicon surface after deposition and annealing of SiO{sub x} films

Semiconductors (Woodbury, N.Y.), 2011-05, Vol.45 (5)

2011

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Electronic states on silicon surface after deposition and annealing of SiO x films

Semiconductors (Woodbury, N.Y.), 2011-05, Vol.45 (5), p.587-592

2011

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Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiOx Films”

Semiconductors (Woodbury, N.Y.), 2011, Vol.45 (6), p.836-836

2011

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Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with {gamma}-ray photons

Semiconductors (Woodbury, N.Y.), 2008-05, Vol.42 (5)

2008

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Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with γ-ray photons

Semiconductors (Woodbury, N.Y.), 2008-05, Vol.42 (5), p.576-579

2008

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Edge Photoluminescence of Single-Crystal Silicon at Room Temperature

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (4), p.406

Gule, E. G.

2005

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Clinical management of COVID-19: Experiences of the COVID-19 epidemic from Groote Schuur Hospital, Cape Town, South Africa

Prolonged treatment of COVID-19 pneumonia with high-flow nasal oxygen: A story of oxygen and resilience

Specific features of Stokes photoluminescence of the La2S3–Ga2S3–Er2S3 glasses

P05.93 Adult medulloblastoma: analysis of use of chemotherapy in clinical practice

Design and characterization of nanostructured SERS substrates based on gold nanostars

Comparison of the synthesis routes for the ZnO/porous silica nanocomposite

Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method

Thin films of Cu2ZnSnS4 for solar cells: optical and structural properties

Effect of erbium fluoride doping on the photoluminescence of SiOx films

Effect of erbium fluoride doping on the photoluminescence of SiO x films

Imperativeness of the use of Assure Model in Inclusive Agricultural Education in Nigerian Universities

Effect of erbium fluoride doping on the photoluminescence of SiO{sub x} films

Structural and Photoluminescence Properties of ZnO Nanowires

Electronic states on silicon surface after deposition and annealing of SiOx films

Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO{sub x} Films after Low-Temperature Annealing

Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiOx Films after Low-Temperature Annealing

Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO x Films after Low-Temperature Annealing

Erratum to: 'Electronic States on Silicon Surface after Deposition and Annealing of SiO{sub x} Films'

Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films”

Electronic states on silicon surface after deposition and annealing of SiO{sub x} films

Electronic states on silicon surface after deposition and annealing of SiO x films

Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiOx Films”

Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with {gamma}-ray photons

Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with γ-ray photons

Edge Photoluminescence of Single-Crystal Silicon at Room Temperature

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