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Structural Characterization of Carbon-implanted GaSb

Journal of Wuhan University of Technology. Materials science edition, 2023-10, Vol.38 (5), p.969-973

2023

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Discharge modeling and characteristic analysis of semi-circular side weir based on the soft computing method

Journal of hydroinformatics, 2024-01, Vol.26 (1), p.175-188

2024

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Research on a Multi-Objective Optimization Method for Transient Flow Oscillation in Multi-Stage Pressurized Pump Stations

Water (Basel), 2024-06, Vol.16 (12), p.1728

2024

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Analysis of discharge characteristics of a symmetrical stepped labyrinth side weir based on global sensitivity

Journal of hydroinformatics, 2024-01, Vol.26 (1), p.337-349

2024

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A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods

Journal of electronic materials, 2020-09, Vol.49 (9), p.5104-5109

2020

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Prediction and parameter quantitative analysis of side orifice discharge coefficient based on machine learning

Water science & technology. Water supply, 2022-12, Vol.22 (12), p.8880-8892

2022

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Impurity band conduction in Mn-doped p type InAs single crystal

Materials science in semiconductor processing, 2018-09, Vol.84, p.115-118

2018

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Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment

半导体学报：英文版, 2017-11, Vol.38 (11), p.60-65

2017

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Numerical and sensitivity analysis of hydraulic characteristics of triangular labyrinth side weir

Flow measurement and instrumentation, 2024-12, Vol.100, p.102686, Article 102686

2024

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Improvement of Field Emission Performance of Multilayered Porous Silicon-Based Electron Source Through Hydrogen Passivation

IEEE electron device letters, 2024-10, Vol.45 (10), p.1706-1709

2024

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Discharge coefficient prediction and sensitivity analysis for triangular broad‐crested weir using machine learning methods

River, 2024-08, Vol.3 (3), p.316-323

2024

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Impurities related micro-defects in GaSb crystal grown by LEC method

Journal of crystal growth, 2024-03, Vol.630, p.127585, Article 127585

2024

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Carbon agent chemical vapor transport growth of Ga2O3 crystal

半导体学报：英文版, 2016-10 (10), p.47-51

苏杰刘彤刘京明杨俊沈桂英白永彪董志远赵有文

2016

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Oxidation related particles on GaSb (100) substrate surfaces

Journal of crystal growth, 2022-03, Vol.581, p.126499, Article 126499

2022

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Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method

Materials science in semiconductor processing, 2023-11, Vol.167, p.107770, Article 107770

2023

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Integrated learning model for water intake capacity of Tyrolean weirs under supercritical flow

Journal of hydroinformatics, 2024-09, Vol.26 (9), p.2443-2455

2024

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Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals

Journal of crystal growth, 2019-11, Vol.526, p.125237, Article 125237

2019

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HCl-H2SO4-H2O solution etching behavior of InAs (100) surface

Journal of crystal growth, 2020-10, Vol.547, p.125800, Article 125800

2020

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VGF growth of high quality InAs single crystals with low dislocation density

Journal of crystal growth, 2020-02, Vol.531, p.125350, Article 125350

2020

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Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth

Materials science in semiconductor processing, 2021-04, Vol.125, p.105624, Article 105624

2021

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Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate

Japanese Journal of Applied Physics, 2021-03, Vol.60 (3), p.35510

2021

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Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods

Materials science in semiconductor processing, 2021-01, Vol.121, p.105460, Article 105460

2021

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LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method

Journal of electronic materials, 2018-09, Vol.47 (9), p.4998-5001

2018

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Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

Chinese physics B, 2019-05, Vol.28 (5), p.57102

2019

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The measurement of responsivity of infrared photodetectors using a cavity blackbody

Journal of semiconductors, 2023-10, Vol.44 (10), p.102301

2023

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Structural Characterization of Carbon-implanted GaSb

Discharge modeling and characteristic analysis of semi-circular side weir based on the soft computing method

Research on a Multi-Objective Optimization Method for Transient Flow Oscillation in Multi-Stage Pressurized Pump Stations

Analysis of discharge characteristics of a symmetrical stepped labyrinth side weir based on global sensitivity

A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods

Prediction and parameter quantitative analysis of side orifice discharge coefficient based on machine learning

Impurity band conduction in Mn-doped p type InAs single crystal

Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment

Numerical and sensitivity analysis of hydraulic characteristics of triangular labyrinth side weir

Improvement of Field Emission Performance of Multilayered Porous Silicon-Based Electron Source Through Hydrogen Passivation

Discharge coefficient prediction and sensitivity analysis for triangular broad‐crested weir using machine learning methods

Impurities related micro-defects in GaSb crystal grown by LEC method

Carbon agent chemical vapor transport growth of Ga2O3 crystal

Oxidation related particles on GaSb (100) substrate surfaces

Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method

Integrated learning model for water intake capacity of Tyrolean weirs under supercritical flow

Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals

HCl-H2SO4-H2O solution etching behavior of InAs (100) surface

VGF growth of high quality InAs single crystals with low dislocation density

Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth

Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate

Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods

LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method

Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

The measurement of responsivity of infrared photodetectors using a cavity blackbody

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