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Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

Applied physics letters, 2017-08, Vol.111 (9)

2017

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Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content

Applied physics letters, 2017-03, Vol.110 (11)

2017

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1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

Applied physics letters, 2015-11, Vol.107 (19)

2015

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Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content

Applied physics letters, 2016-12, Vol.109 (24)

2016

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Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress

Journal of applied physics, 2017-02, Vol.121 (5)

2017

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Accurate strain measurements in highly strained Ge microbridges

Applied physics letters, 2016-06, Vol.108 (24)

2016

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Germanium based photonic components toward a full silicon/germanium photonic platform

Progress in crystal growth and characterization of materials, 2017-06, Vol.63 (2), p.1-24

2017

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Uniform phosphorus doping of untapered germanium nanowires

Nanotechnology, 2016-12, Vol.27 (48), p.485701-485701

2016

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Study of the light emission in Ge layers and strained membranes on Si substrates

Thin solid films, 2016-08, Vol.613, p.64-67

2016

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Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition

Thin solid films, 2016-03, Vol.602, p.13-19

2016

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Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications

MRS communications, 2017-09, Vol.7 (3), p.691-694

2017

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Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ andbiaxial (001) stress

Journal of applied physics, 2017-02, Vol.121 (5)

2017

Volltextzugriff (PDF)

Will Ge and GeSn lasers enable Si photonics in the Mid-Infrared?

2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 2017, p.27-28

2017

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Highly strained direct bandgap Germanium cavities for a monolithic laser on Si

2016 IEEE 13th International Conference on Group IV Photonics (GFP), 2016, p.40-41

2016

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Photocurrent spectroscopy and X-ray microdiffraction study of highly strained germanium nanostructures

2015 IEEE 12th International Conference on Group IV Photonics (GFP), 2015, p.173-174

2015

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Distributed Bragg reflectors integration in highly strained Ge micro-bridges on 200 mm GeOI substrates for laser applications

2015 IEEE 12th International Conference on Group IV Photonics (GFP), 2015, p.51-52

2015

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Band structure engineering of strained and doped germanium nanowires and 2D layers

11th International Conference on Group IV Photonics (GFP), 2014, p.233-234

2014

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Fabrication of 200 mm Germanium-On-Insulator (GeOI): A step toward a Germanium photonic platform

2016 IEEE 13th International Conference on Group IV Photonics (GFP), 2016, p.140-142

2016

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Non-linear bandgap strain dependence in highly strained germanium using strain redistribution in 200 mm GeOI wafers for laser applications

2016 IEEE 13th International Conference on Group IV Photonics (GFP), 2016, p.104-105

2016

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Electron–phonon coupling in single-layer MoS2

Surface science, 2019-03, Vol.681, p.64-69

2019

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Quasi-one-dimensional metallic band dispersion in the commensurate charge density wave of 1T−TaS2

Physical review. B, 2017-11, Vol.96 (19)

2017

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Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

Physical review. B, 2017-09, Vol.96 (12)

2017

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Quasi-one-dimensional metallic band dispersion in the commensurate charge density wave of 1 T − TaS 2

Physical review. B, 2017-11, Vol.96 (19), Article 195147

2017

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The importance of different scale processes for the restoration of floodplain woodlands

Regulated rivers, 2001-07, Vol.17 (4-5), p.325-345

2001

Volltextzugriff (PDF)

Spin-dependent electron-phonon coupling in the valence band of single-layer WS 2

Physical review. B, 2017-09, Vol.96 (12), Article 121402

2017

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Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content

1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content

Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress

Accurate strain measurements in highly strained Ge microbridges

Germanium based photonic components toward a full silicon/germanium photonic platform

Uniform phosphorus doping of untapered germanium nanowires

Study of the light emission in Ge layers and strained membranes on Si substrates

Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition

Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications

Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ andbiaxial (001) stress

Will Ge and GeSn lasers enable Si photonics in the Mid-Infrared?

Highly strained direct bandgap Germanium cavities for a monolithic laser on Si

Photocurrent spectroscopy and X-ray microdiffraction study of highly strained germanium nanostructures

Distributed Bragg reflectors integration in highly strained Ge micro-bridges on 200 mm GeOI substrates for laser applications

Band structure engineering of strained and doped germanium nanowires and 2D layers

Fabrication of 200 mm Germanium-On-Insulator (GeOI): A step toward a Germanium photonic platform

Non-linear bandgap strain dependence in highly strained germanium using strain redistribution in 200 mm GeOI wafers for laser applications

Electron–phonon coupling in single-layer MoS2

Quasi-one-dimensional metallic band dispersion in the commensurate charge density wave of 1T−TaS2

Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

Quasi-one-dimensional metallic band dispersion in the commensurate charge density wave of 1 T − TaS 2

The importance of different scale processes for the restoration of floodplain woodlands

Spin-dependent electron-phonon coupling in the valence band of single-layer WS 2

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