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Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

Materials, 2019-08, Vol.12 (15), p.2455

2019

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Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching

Physica Status Solidi B. Basic Solid State Physics, 2017-08, Vol.254 (8), p.n/a

2017

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3a-7

Tim Dornis, Jan Eichelberger, Jochen Glöckner, Guido Toussaint, Louis Pahlow / Karl-Nikolaus Peifer, Tim Dornis, Jan Eichelberger, Jochen Glöckner, Guido Toussaint, Louis Pahlow

3, 2019

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Electrical characterization of RuOx/n-GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

AIP advances, 2020-01, Vol.10 (1), p.015116-015116-7

2020

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Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights

Semiconductor science and technology, 2019-09, Vol.34 (9), p.95003

2019

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Activating Thick Buried p-GaN for Device Applications

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4224-4230

2022

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Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

IEEE journal of the Electron Devices Society, 2015-07, Vol.3 (4), p.341-348

2015

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High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates

IEEE electron device letters, 2018-11, Vol.39 (11), p.1716-1719

2018

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Thin-film GaN Schottky diodes formed by epitaxial lift-off

Applied physics letters, 2017-04, Vol.110 (17)

2017

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Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

AIP advances, 2020-01, Vol.10 (1)

2020

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Threshold lowering in GaN micropillar lasers by means of spatially selective optical pumping

IEEE photonics technology letters, 2001-01, Vol.13 (1), p.1-3

2001

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Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors

Journal of applied physics, 2004-02, Vol.95 (3), p.909-912

2004

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Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates

Physica status solidi. A, Applications and materials science, 2019-02, Vol.216 (4), p.n/a

2019

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Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities

Applied physics letters, 1999-07, Vol.75 (2), p.166-168

1999

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Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019)

Physica status solidi. A, Applications and materials science, 2019-02, Vol.216 (4), p.n/a

2019

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Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching (Phys. Status Solidi B 8/2017)

physica status solidi (b), 2017-08, Vol.254 (8)

2017

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GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes

Materials science in semiconductor processing, 2016-11, Vol.55, p.2-6

2016

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GaInN/GaN - Ni/Au transparent conducting oxide Schottky barrier solar cells

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.1139-1142

2014

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Erratum: “Stimulated emission and lasing in whispering gallery modes of GaN microdisk cavities” [Appl. Phys. Lett. 75 , 166 (1999)]

Applied physics letters, 1999-12, Vol.75 (23), p.3719-3719

1999

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Annealed indium oxide transparent ohmic contacts to GaAs

Journal of applied physics, 1992-01, Vol.71 (2), p.1070-1072

1992

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Educators' attitudes toward the inclusion of severely/profoundly disabled students in regular classrooms

Denti, Louis Guido

1990

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Layer disordering and aluminum-gallium interchange in aluminum-gallium arsenide - gallium-arsenide quantum well heterostructures

Guido, Louis Joseph

1989

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INDIVIDUAL FREEDOM AND SOCIAL COOPERATION: ROUSSEAU AND A BASIC PROBLEM FOR MORAL AND POLITICAL PHILOSOPHY

LOMBARDI, LOUIS GUIDO

1980

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Directional laser emission from chaotic modes in quadrupole-deformed GaN microdisks

Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088), 2000, p.178-179

2000

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Directional stimulated emission from deformed GaN micropillar cavities

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009), 1999, Vol.2, p.556-557 vol.2

1999

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Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching

3a-7

Electrical characterization of RuOx/n-GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights

Activating Thick Buried p-GaN for Device Applications

Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates

Thin-film GaN Schottky diodes formed by epitaxial lift-off

Electrical characterization of RuO x / n -GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

Threshold lowering in GaN micropillar lasers by means of spatially selective optical pumping

Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates

Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019)

Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching (Phys. Status Solidi B 8/2017)

GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes

GaInN/GaN - Ni/Au transparent conducting oxide Schottky barrier solar cells

Erratum: “Stimulated emission and lasing in whispering gallery modes of GaN microdisk cavities” [Appl. Phys. Lett. 75 , 166 (1999)]

Annealed indium oxide transparent ohmic contacts to GaAs

Educators' attitudes toward the inclusion of severely/profoundly disabled students in regular classrooms

Layer disordering and aluminum-gallium interchange in aluminum-gallium arsenide - gallium-arsenide quantum well heterostructures

INDIVIDUAL FREEDOM AND SOCIAL COOPERATION: ROUSSEAU AND A BASIC PROBLEM FOR MORAL AND POLITICAL PHILOSOPHY

Directional laser emission from chaotic modes in quadrupole-deformed GaN microdisks

Directional stimulated emission from deformed GaN micropillar cavities

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