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Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum

Physics of the solid state, 2022-03, Vol.64 (3), p.107-117

2022

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Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (15), p.1989-1989

2018

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Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure

Physics of metals and metallography, 2024-02, Vol.125 (2), p.137-141

2024

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Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites

Journal of magnetism and magnetic materials, 2020-11, Vol.513, p.167209, Article 167209

2020

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Quasiclassical calculations of Landau level spectrum for 20.5-nm-wide H gTe quantum well: “extremum loop” model and effects of cubic symmetry

Low temperature physics (Woodbury, N.Y.), 2021-01, Vol.47 (1), p.7-13

2021

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Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures

Low temperature physics (Woodbury, N.Y.), 2021-01, Vol.47 (1), p.14-18

2021

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Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.982-990

2020

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Scaling laws under quantum Hall effect for a smooth disorder potential

Low temperature physics (Woodbury, N.Y.), 2019-02, Vol.45 (2), p.176-180

2019

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On the issue of universality of critical exponents in the quantum Hall effect mode

Low temperature physics (Woodbury, N.Y.), 2019-02, Vol.45 (2), p.181-188

2019

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HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential

Low temperature physics (Woodbury, N.Y.), 2019-04, Vol.45 (4), p.412-418

2019

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Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1551-1558

2018

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Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.12-18

2018

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Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure

Journal of low temperature physics, 2016-12, Vol.185 (5-6), p.665-672

2016

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Insulator-quantum Hall transition in n -InGaAs/GaAs heterostructures

Low temperature physics (Woodbury, N.Y.), 2017-04, Vol.43 (4), p.491-494

2017

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Antisymmetric contribution to the magnetoresistance of heterostructures in a parallel magnetic field

Low temperature physics (Woodbury, N.Y.), 2017-04, Vol.43 (4), p.495-498

2017

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Quantum Hall transitions in the presence of Landau levels mixing in n-InGaAs/InAlAs structures

IOP conference series. Materials Science and Engineering, 2019-02, Vol.475 (1), p.12029

2019

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Activation transport under quantum Hall regime in HgTe-based heterostructure

Low temperature physics (Woodbury, N.Y.), 2017-04, Vol.43 (4), p.485-490

2017

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The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.272-278

2017

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Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1641-1646

2016

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Conditions for experimental observation of the critical behavior of the longitudinal and Hall resistance in the quantum Hall regime in gallium and indium arsenide-based heterostructures

Low temperature physics (Woodbury, N.Y.), 2017-04, Vol.43 (4), p.478-484

2017

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Quantum magnetotransport in n -InGaAs/GaAs structures with electron density changes caused by infrared radiation

Low temperature physics (Woodbury, N.Y.), 2015-03, Vol.41 (3), p.221-232

2015

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Czochralski silicon characterization by using thermoelectric power measurements at high pressure

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.1026-1030

2003

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Quantum Hall plateau-plateau transitions in n -InGaAs/GaAs heterostructures before and after IR illumination

Low temperature physics (Woodbury, N.Y.), 2015-02, Vol.41 (2), p.106-111

2015

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Temperature dependence of quantum lifetime in n -InGaAs/GaAs structures with strongly coupled double quantum wells

Low temperature physics (Woodbury, N.Y.), 2013-01, Vol.39 (1), p.43-49

2013

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Evolution of the energy structure of n-InGaAs/GaAs double quantum wells in tilted magnetic fields

Bulletin of the Russian Academy of Sciences. Physics, 2014-09, Vol.78 (9), p.927-931

2014

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Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum

Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure

Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites

Quasiclassical calculations of Landau level spectrum for 20.5-nm-wide H gTe quantum well: “extremum loop” model and effects of cubic symmetry

Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures

Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations

Scaling laws under quantum Hall effect for a smooth disorder potential

On the issue of universality of critical exponents in the quantum Hall effect mode

HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure

Insulator-quantum Hall transition in n -InGaAs/GaAs heterostructures

Antisymmetric contribution to the magnetoresistance of heterostructures in a parallel magnetic field

Quantum Hall transitions in the presence of Landau levels mixing in n-InGaAs/InAlAs structures

Activation transport under quantum Hall regime in HgTe-based heterostructure

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs

Conditions for experimental observation of the critical behavior of the longitudinal and Hall resistance in the quantum Hall regime in gallium and indium arsenide-based heterostructures

Quantum magnetotransport in n -InGaAs/GaAs structures with electron density changes caused by infrared radiation

Czochralski silicon characterization by using thermoelectric power measurements at high pressure

Quantum Hall plateau-plateau transitions in n -InGaAs/GaAs heterostructures before and after IR illumination

Temperature dependence of quantum lifetime in n -InGaAs/GaAs structures with strongly coupled double quantum wells

Evolution of the energy structure of n-InGaAs/GaAs double quantum wells in tilted magnetic fields

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