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Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress

IEEE transactions on electron devices, 2012-06, Vol.59 (6), p.1661-1667

2012

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Investigation of hot carrier degradation in bulk FinFET

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.XT-6.1-XT-6.4

2017

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Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With \hbox\hbox Gate Dielectric Under PBTI Stress

IEEE transactions on electron devices, 2012-06, Vol.59 (6), p.1661-1667

2012

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Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs

IEEE transactions on nanotechnology, 2013-09, Vol.12 (5), p.806-809

2013

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Extraction of Channel Electron Effective Mobility in InGaAs/Al O n-FinFETs

IEEE transactions on nanotechnology, 2013-09, Vol.12 (5), p.806-809

2013

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Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2196-2202

2022

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Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

IEEE electron device letters, 2022-06, Vol.43 (6), p.894-897

2022

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Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.DG-6.1-DG-6.3

2017

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Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F 2 by Monolithic Stacking

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2196-2202

2022

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27‐3: Invited Paper: High‐Performance Sub‐50nm Channel Length 3D Monolithically Stackable Vertical IGZO TFTs for Active‐Matrix Application

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.318-321

2022

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PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3613-3618

2014

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Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.300-301

2022

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Diagram representations of charge pumping processes in CMOS transistors

Journal of semiconductors, 2010-08, Vol.31 (8), p.53-59

黄新运焦广泛沈忱曹伟黄大鸣李名复

2010

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Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.296-297

2022

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Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.31.2.1-31.2.4

2016

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Reliability of inversion channel InGaAs n-MOSFETs

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012, p.1-4

2012

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Novel Vertical Channel-All-Around(CAA) IGZO FETs for 2\mathrm0\mathrm DRAM with High Density beyond 4F2 by Monolithic Stacking

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.10.5.1-10.5.4

2021

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Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

IEEE transactions on device and materials reliability, 2013-12, Vol.13 (4), p.515-523

2013

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Characterization of thermal boundary resistance at solid–liquid interface based on continuous wave frequency domain thermal reflection method

Heat and mass transfer, 2023-02, Vol.59 (2), p.203-213

2023

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Synthesis of axially chiral thiourea by NHC-catalyzed desymmetrizative amidation

Green chemistry : an international journal and green chemistry resource : GC, 2024-09

2024

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Network pharmacology study on the active components of Pterocypsela elata and the mechanism of their effect against cerebral ischemia

Drug design, development and therapy, 2019-09, Vol.13, p.3009-3019

2019

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Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress

Investigation of hot carrier degradation in bulk FinFET

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With \hbox\hbox Gate Dielectric Under PBTI Stress

Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs

Extraction of Channel Electron Effective Mobility in InGaAs/Al O n-FinFETs

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking

Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F 2 by Monolithic Stacking

27‐3: Invited Paper: High‐Performance Sub‐50nm Channel Length 3D Monolithically Stackable Vertical IGZO TFTs for Active‐Matrix Application

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability

Diagram representations of charge pumping processes in CMOS transistors

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application

Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

Reliability of inversion channel InGaAs n-MOSFETs

Novel Vertical Channel-All-Around(CAA) IGZO FETs for 2\mathrm0\mathrm DRAM with High Density beyond 4F2 by Monolithic Stacking

Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

Characterization of thermal boundary resistance at solid–liquid interface based on continuous wave frequency domain thermal reflection method

Synthesis of axially chiral thiourea by NHC-catalyzed desymmetrizative amidation

Network pharmacology study on the active components of Pterocypsela elata and the mechanism of their effect against cerebral ischemia

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