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Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain

IEEE electron device letters, 2021-01, Vol.42 (1), p.10-13

2021

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Stacked Ge-Nanosheet GAAFETs Fabricated by Ge/Si Multilayer Epitaxy

IEEE electron device letters, 2018-08, Vol.39 (8), p.1133-1136

2018

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Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications

Scientific reports, 2023-06, Vol.13 (1), p.9433-9433, Article 9433

2023

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Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1265-1270

2022

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Application of Tivantinib for Hepatocellular Carcinoma: A Meta-Analysis Study

Evidence-based complementary and alternative medicine, 2022, Vol.2022, p.1-6

2022

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High-Mobility GeSn n-Channel MOSFETs by Low-Temperature Chemical Vapor Deposition and Microwave Annealing

IEEE electron device letters, 2018-04, Vol.39 (4), p.468-471

2018

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Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

IEEE electron device letters, 2021-12, Vol.42 (12), p.1727-1730

2021

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Improving Interface State Density and Thermal Stability of High- \kappa Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5

IEEE electron device letters, 2019-05, Vol.40 (5), p.678-681

2019

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Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel

IEEE electron device letters, 2019-02, Vol.40 (2), p.181-184

2019

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High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

Nanomaterials (Basel, Switzerland), 2023-04, Vol.13 (8), p.1310

2023

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High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process

IEEE electron device letters, 2016-01, Vol.37 (1), p.8-11

2016

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3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Selective dry-etching process for fabricating Ge gate-all-around field-effect transistors on Si substrates

Thin solid films, 2013-07, Vol.540, p.183-189

2013

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High-Performance Germanium p- and n-MOSFETs With NiGe Source/Drain

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2656-2661

2014

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Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.408-412

2022

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High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

Applied physics letters, 2011-04, Vol.98 (16), p.161905-161905-3

2011

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Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel

IEEE electron device letters, 2014-01, Vol.35 (1), p.12-14

2014

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Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2714-2721

2016

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Body-Tied Germanium FinFETs Directly on a Silicon Substrate

IEEE electron device letters, 2012-12, Vol.33 (12), p.1678-1680

2012

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Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

IEEE electron device letters, 2014-01, Vol.35 (1), p.6-8

2014

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Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review

IEEE journal of the Electron Devices Society, 2016-09, Vol.4 (5), p.286-293

2016

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Thermal conductivity of Si/SiGe superlattice films

Journal of applied physics, 2008-12, Vol.104 (11), p.114301-114301-8

2008

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3-D Self-Aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate Simple Process

IEEE electron device letters, 2024-10, Vol.45 (10), p.2013-2016

2024

Volltextzugriff (PDF)

High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5 Through Aluminum Capping

IEEE electron device letters, 2021-12, Vol.42 (12), p.1723-1726

2021

Volltextzugriff (PDF)

Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

Materials, 2015-11, Vol.8 (11), p.7519-7523

2015

Volltextzugriff (PDF)

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Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain

Stacked Ge-Nanosheet GAAFETs Fabricated by Ge/Si Multilayer Epitaxy

Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications

Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates

Application of Tivantinib for Hepatocellular Carcinoma: A Meta-Analysis Study

High-Mobility GeSn n-Channel MOSFETs by Low-Temperature Chemical Vapor Deposition and Microwave Annealing

Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

Improving Interface State Density and Thermal Stability of High- \kappa Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5

Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process

3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET

Selective dry-etching process for fabricating Ge gate-all-around field-effect transistors on Si substrates

High-Performance Germanium p- and n-MOSFETs With NiGe Source/Drain

Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO

High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel

Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

Body-Tied Germanium FinFETs Directly on a Silicon Substrate

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review

Thermal conductivity of Si/SiGe superlattice films

3-D Self-Aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate Simple Process

High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5 Through Aluminum Capping

Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

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