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Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

Applied physics letters, 2022-10, Vol.121 (14)

2022

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AlGaN/GaN MOS-HEMT enabled optoelectronic artificial synaptic devices for neuromorphic computing

APL machine learning, 2024-06, Vol.2 (2), p.026113-026113-9

2024

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Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.540-546

2022

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Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

IEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1-1

2020

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Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3290-3295

2021

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Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3302-3309

2022

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545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching

IEEE electron device letters, 2024-06, Vol.45 (6), p.968-971

2024

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Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT With ZrO2 Gate Dielectric

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5590-5595

2023

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Small V th Shift and Low Dynamic R on in GaN MOSHEMT With ZrO 2 Gate Dielectric

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5590-5595

2023

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4 V) by Ion Beam Etching

IEEE electron device letters, 2024-01, Vol.45 (6), p.968

2024

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Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier

Electronics (Basel), 2024-04, Vol.13 (7), p.1265

2024

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Toxic Effect of Visible Light on Drosophila Life Span Depending on Diet Protein Content

The journals of gerontology. Series A, Biological sciences and medical sciences, 2019-01, Vol.74 (2), p.163-167

2019

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Small V th Shift and Low Dynamic R on in GaN MOSHEMT With ZrO2 Gate Dielectric

IEEE transactions on electron devices, 2023-01, Vol.70 (11), p.5590

2023

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Emission and capture characteristics of electron trap (E emi = 0.8 eV) in Si-doped β-Ga2O3 epilayer

Semiconductor science and technology, 2023-01, Vol.38 (1)

2023

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Emission and capture characteristics of electron trap (E emi = 0.8 eV) in Si-doped β-Ga 2 O 3 epilayer

Semiconductor science and technology, 2023-01, Vol.38 (1), p.15001

2023

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CO2 anesthesia on Drosophila survival in aging research

Archives of insect biochemistry and physiology, 2020-01, Vol.103 (1), p.e21639-n/a

2020

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CO 2 anesthesia on Drosophila survival in aging research

Archives of insect biochemistry and physiology, 2020-01, Vol.103 (1), p.e21639

2020

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Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN x Dielectric Layer

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.540-546

2022

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Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection

Electronics (Basel), 2022-07, Vol.11 (13), p.1958

2022

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A laboratory exercise for detecting microbial contaminants

Biochemistry and molecular biology education, 2018-05, Vol.46 (3), p.279-284

2018

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A fail safe broadcast protocol for collaborative intelligent vehicles

2015 IEEE 16th International Symposium on A World of Wireless, Mobile and Multimedia Networks (WoWMoM), 2015, p.1-6

2015

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Demonstration and modeling of frequency tripler based on GaN Schottky diode pair

Microelectronics, 2022-07, Vol.125, p.105464, Article 105464

2022

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A multiple stack architecture for intelligent vehicles

2014 IEEE Intelligent Vehicles Symposium Proceedings, 2014, p.268-273

2014

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13 - Architectures for intelligent vehicles

Vehicular Communications and Networks, 2015, p.275-299

2015

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Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric

IEEE transactions on device and materials reliability, 2024-09, Vol.24 (3), p.358-364

2024

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Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

AlGaN/GaN MOS-HEMT enabled optoelectronic artificial synaptic devices for neuromorphic computing

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer

Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching

Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT With ZrO2 Gate Dielectric

Small V th Shift and Low Dynamic R on in GaN MOSHEMT With ZrO 2 Gate Dielectric

4 V) by Ion Beam Etching

Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier

Toxic Effect of Visible Light on Drosophila Life Span Depending on Diet Protein Content

Small V th Shift and Low Dynamic R on in GaN MOSHEMT With ZrO2 Gate Dielectric

Emission and capture characteristics of electron trap (E emi = 0.8 eV) in Si-doped β-Ga2O3 epilayer

Emission and capture characteristics of electron trap (E emi = 0.8 eV) in Si-doped β-Ga 2 O 3 epilayer

CO2 anesthesia on Drosophila survival in aging research

CO 2 anesthesia on Drosophila survival in aging research

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN x Dielectric Layer

Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection

A laboratory exercise for detecting microbial contaminants

A fail safe broadcast protocol for collaborative intelligent vehicles

Demonstration and modeling of frequency tripler based on GaN Schottky diode pair

A multiple stack architecture for intelligent vehicles

13 - Architectures for intelligent vehicles

Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric

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