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Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

Surface science, 2012-07, Vol.606 (13-14), p.1093-1099

2012

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Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (16), p.1998-2006

2018

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Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method

Molecular Crystals and Liquid Crystals, 2016-03, Vol.627 (1), p.66-73

2016

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Development of Monte-Carlo simulations for nano-patterning surfaces associated with MM-EPES analysis Application to different Si(111) nanoporous surfaces

Surface science, 2013-12, Vol.618, p.72-77

2013

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Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

Vacuum, 2000-05, Vol.57 (2), p.219-228

2000

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XPS study of the formation of ultrathin GaN film on GaAs(1 0 0)

Applied surface science, 2008-04, Vol.254 (13), p.4150-4153

2008

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A study of the 42CrMo4 steel surface by quantitative XPS electron spectroscopy

Applied surface science, 2008-05, Vol.254 (15), p.4738-4743

2008

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Effect of surface roughness on EPES and AREPES measurements: Flat and crenels silicon surfaces

Surface science, 2008-06, Vol.602 (12), p.2114-2120

2008

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Electrical characterization of Au/n-GaN Schottky diodes

Materials chemistry and physics, 2004-05, Vol.85 (1), p.27-31

2004

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Energy dependence of the energy loss function parametrization of indium in the Drude-Lindhard model

Surface and interface analysis, 2014-04, Vol.46 (4), p.283-288

2014

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Monte Carlo simulation for Multi-Mode Elastic Peak Electron Spectroscopy of crystalline materials: Effects of surface structure and excitation

Surface science, 2010-01, Vol.604 (2), p.217-226

2010

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Illumination dependence of I– V and C– V characterization of Au/InSb/InP(1 0 0) Schottky structure

Applied surface science, 2006-11, Vol.253 (3), p.1065-1070

2006

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SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar + ion sputtering

Surface science, 2009-10, Vol.603 (19), p.2923-2927

2009

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Nitridation of InP(1 0 0) substrates studied by XPS spectroscopy and electrical analysis

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2006-11, Vol.437 (2), p.254-258

2006

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Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions

Materials chemistry and physics, 2009-11, Vol.118 (1), p.1-5

2009

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Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

Applied surface science, 2022-03, Vol.579, p.152191, Article 152191

2022

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Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

Applied surface science, 2019-11, Vol.495, p.143586, Article 143586

2019

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XPS study of the O2/SF6 microwave plasma oxidation of (0 0 1 ) GaAs surfaces

Applied surface science, 2009-10, Vol.256 (1), p.56-60

2009

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First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements

Applied surface science, 2009-08, Vol.255 (22), p.9206-9210

2009

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Nitridation of GaAs(1 0 0) substrates and Ga/GaAs systems studied by XPS spectroscopy

Applied surface science, 2003-05, Vol.212-213, p.614-618

2003

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XPS, EPMA and microstructural analysis of a defective industrial plasma-nitrided steel

Surface & coatings technology, 2008-08, Vol.202 (24), p.5887-5894

2008

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Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence

Journal of crystal growth, 2009-04, Vol.311 (9), p.2608-2614

2009

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Morphology and optical properties of p-type porous GaAs(1 0 0) layers made by electrochemical etching

Journal of luminescence, 2008-10, Vol.128 (10), p.1611-1616

2008

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XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation

Applied surface science, 2006-09, Vol.252 (22), p.7890-7894

2006

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Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods

Vacuum, 2004-11, Vol.76 (4), p.471-476

2004

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Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode

Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method

Development of Monte-Carlo simulations for nano-patterning surfaces associated with MM-EPES analysis Application to different Si(111) nanoporous surfaces

Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

XPS study of the formation of ultrathin GaN film on GaAs(1 0 0)

A study of the 42CrMo4 steel surface by quantitative XPS electron spectroscopy

Effect of surface roughness on EPES and AREPES measurements: Flat and crenels silicon surfaces

Electrical characterization of Au/n-GaN Schottky diodes

Energy dependence of the energy loss function parametrization of indium in the Drude-Lindhard model

Monte Carlo simulation for Multi-Mode Elastic Peak Electron Spectroscopy of crystalline materials: Effects of surface structure and excitation

Illumination dependence of I– V and C– V characterization of Au/InSb/InP(1 0 0) Schottky structure

SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar + ion sputtering

Nitridation of InP(1 0 0) substrates studied by XPS spectroscopy and electrical analysis

Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions

Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

XPS study of the O2/SF6 microwave plasma oxidation of (0 0 1 ) GaAs surfaces

First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements

Nitridation of GaAs(1 0 0) substrates and Ga/GaAs systems studied by XPS spectroscopy

XPS, EPMA and microstructural analysis of a defective industrial plasma-nitrided steel

Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence

Morphology and optical properties of p-type porous GaAs(1 0 0) layers made by electrochemical etching

XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation

Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods

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