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Effects of roughness, fibronectin and vitronectin on attachment, spreading, and proliferation of human osteoblast-like cells (Saos-2) on titanium surfaces

Calcified tissue international, 1999-06, Vol.64 (6), p.499-507

1999

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Study of oxygen/tetraethoxysilane plasmas in a helicon reactor using optical emission spectroscopy and mass spectrometry

Plasma sources science & technology, 2000-08, Vol.9 (3), p.331-339

2000

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Mass spectrometric investigation of the positive ions formed in low-pressure oxygen/tetraethoxysilane and argon/tetraethoxysilane plasmas

Journal of applied physics, 2001-05, Vol.89 (9), p.5227-5229

2001

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Study of oxygen/TEOS plasmas and thin SiOx films obtained in an helicon diffusion reactor

Surface & coatings technology, 1998, Vol.98 (1-3), p.1578-1583

1998

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An XPS study of the SF6 reactive ion beam etching of silicon at low temperatures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999-08, Vol.155 (3), p.280-288

1999

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Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-05, Vol.16 (3), p.1552-1559

1998

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Study of DLC/silicon interfaces by XPS and in-situ ellipsometry

Applied surface science, 1993-05, Vol.68 (1), p.149-160

1993

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Plasma diagnostics of a SF6 radiofrequency discharge used for the etching of silicon

Journal of physics. D, Applied physics, 1986-06, Vol.19 (6), p.991-1005

1986

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Mass spectrometric study of tetraethoxysilane and tetraethoxysilane–oxygen plasmas in a diode type radio-frequency reactor

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1992-07, Vol.10 (4), p.1407-1413

1992

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Mass spectrometry of a silane glow discharge during plasma deposition of a-Si: H films

Thin solid films, 1980-04, Vol.67 (2), p.309-320

1980

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Neon ion beam-induced surface reactions of SF6 adsorbed molecules with silicon at low temperature

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1996-01, Vol.14 (1), p.234-239

1996

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In situ XPS analysis of the tungsten/sublayer interface after SF6 based reactive ion etching

Applied surface science, 1993-06, Vol.70-71 (1-4), p.613-618

1993

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Interaction of 100 eV and 5 keV electrons with a condensed layer of SF6 on silicon at 100 K

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-12, Vol.72 (3-4), p.369-379

1992

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Study of the characteristics of the ion beam extracted from an rf discharge in hydrogen under conditions of resonance

Journal of applied physics, 1974-08, Vol.45 (8), p.3385-3393

Grolleau, B.

1974

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Systematics of the black rat in Madagascar: consequences for the transmission and distribution of plague

Biological journal of the Linnean Society, 2003-03, Vol.78 (3), p.335-341

2003

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Reaction mechanisms in plasma deposition of SixC1-x:H films

Thin solid films, 1981-01, Vol.76 (1), p.23-34

1981

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A study of the silane glow discharge deposition by isotopic labelling

Thin solid films, 1981-01, Vol.77 (4), p.287-300

1981

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Reaction mechanisms of the radio frequency glow discharged deposition process in silane-helium

Thin solid films, 1979-06, Vol.60 (2), p.147-155

1979

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Contamination of Silicon Surfaces Exposed to CHF 3 Plasmas: An XPS Study of the Film and the Film‐Surface Interface

Journal of the Electrochemical Society, 1988-06, Vol.135 (6), p.1472-1477

1988

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Ion and radical reactions in the silane glow discharge deposition of a-Si:H films

Plasma chemistry and plasma processing, 1982-03, Vol.2 (1), p.61-80

1982

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Silicon damage and residue overlayer caused by rie and ribe processes with CHF3

Applied surface science, 1989-01, Vol.36 (1-4), p.322-331

1989

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Energy Distribution of Ions in Plasma Etching Reactors

MRS proceedings, 1986, Vol.68, Article 109

1986

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An XPS study of the SF 6 reactive ion beam etching of silicon at low temperatures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.155 (3), p.280-288

1999

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Etch product identification during - RIE of InP using mass spectrometry

Plasma sources science & technology, 1997-11, Vol.6 (4), p.561-568

1997

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Study of oxygen/TEOS plasmas and thin SiO x films obtained in an helicon diffusion reactor

Surface & coatings technology, 1998, Vol.98 (1), p.1578-1583

1998

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Effects of roughness, fibronectin and vitronectin on attachment, spreading, and proliferation of human osteoblast-like cells (Saos-2) on titanium surfaces

Study of oxygen/tetraethoxysilane plasmas in a helicon reactor using optical emission spectroscopy and mass spectrometry

Mass spectrometric investigation of the positive ions formed in low-pressure oxygen/tetraethoxysilane and argon/tetraethoxysilane plasmas

Study of oxygen/TEOS plasmas and thin SiOx films obtained in an helicon diffusion reactor

An XPS study of the SF6 reactive ion beam etching of silicon at low temperatures

Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis

Study of DLC/silicon interfaces by XPS and in-situ ellipsometry

Plasma diagnostics of a SF6 radiofrequency discharge used for the etching of silicon

Mass spectrometric study of tetraethoxysilane and tetraethoxysilane–oxygen plasmas in a diode type radio-frequency reactor

Mass spectrometry of a silane glow discharge during plasma deposition of a-Si: H films

Neon ion beam-induced surface reactions of SF6 adsorbed molecules with silicon at low temperature

In situ XPS analysis of the tungsten/sublayer interface after SF6 based reactive ion etching

Interaction of 100 eV and 5 keV electrons with a condensed layer of SF6 on silicon at 100 K

Study of the characteristics of the ion beam extracted from an rf discharge in hydrogen under conditions of resonance

Systematics of the black rat in Madagascar: consequences for the transmission and distribution of plague

Reaction mechanisms in plasma deposition of SixC1-x:H films

A study of the silane glow discharge deposition by isotopic labelling

Reaction mechanisms of the radio frequency glow discharged deposition process in silane-helium

Contamination of Silicon Surfaces Exposed to CHF 3 Plasmas: An XPS Study of the Film and the Film‐Surface Interface

Ion and radical reactions in the silane glow discharge deposition of a-Si:H films

Silicon damage and residue overlayer caused by rie and ribe processes with CHF3

Energy Distribution of Ions in Plasma Etching Reactors

An XPS study of the SF 6 reactive ion beam etching of silicon at low temperatures

Etch product identification during - RIE of InP using mass spectrometry

Study of oxygen/TEOS plasmas and thin SiO x films obtained in an helicon diffusion reactor

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