UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Applied physics letters, 2023-01, Vol.122 (3)

2023

Volltextzugriff (PDF)

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

IEEE electron device letters, 2012-08, Vol.33 (8), p.1168-1170

2012

Volltextzugriff (PDF)

Punch-through in short-channel AlGaN/GaN HFETs

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.395-398

2006

Volltextzugriff (PDF)

GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

Electronics letters, 2015-09, Vol.51 (19), p.1532-1534

2015

Volltextzugriff (PDF)

Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

Volltextzugriff (PDF)

Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate

IEEE electron device letters, 2011-09, Vol.32 (9), p.1230-1232

2011

Volltextzugriff (PDF)

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95016

2018

Volltextzugriff (PDF)

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

IEEE electron device letters, 2012-09, Vol.33 (9), p.1258-1260

2012

Volltextzugriff (PDF)

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

IEEE electron device letters, 2006-01, Vol.27 (1), p.7-9

2006

Volltextzugriff (PDF)

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

Microelectronic engineering, 2011-04, Vol.88 (4), p.370-372

2011

Volltextzugriff (PDF)

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

European physical journal. Applied physics, 2010-07, Vol.51 (1), p.10304

2010

Volltextzugriff (PDF)

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

IEEE electron device letters, 2004-07, Vol.25 (7), p.453-455

2004

Volltextzugriff (PDF)

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Journal of crystal growth, 2007, Vol.298, p.826-830

2007

Volltextzugriff (PDF)

Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

Applied physics express, 2013-04, Vol.6 (4), p.44001

2013

Volltextzugriff (PDF)

Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

Applied physics express, 2011-12, Vol.4 (12), p.124101

2011

Volltextzugriff (PDF)

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

Semiconductors (Woodbury, N.Y.), 2012-03, Vol.46 (3), p.382-385

2012

Volltextzugriff (PDF)

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

Applied physics letters, 2009-06, Vol.94 (23), p.233506-233506-3

2009

Volltextzugriff (PDF)

Thermal stability of Mo-based schottky contact for AlGaN/GaN HEMT

Electronics letters, 2005, Vol.41 (16), p.927-928

2005

Volltextzugriff (PDF)

Photonic band gap material for integrated photonic application: technological challenges

Microelectronic engineering, 2002-07, Vol.61, p.537-544

2002

Volltextzugriff (PDF)

Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design

2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.747-750

2006

Volltextzugriff (PDF)

Reliability Investigation of Gallium Nitride HEMT

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1369-1373

2004

Volltextzugriff (PDF)

High PAE high reliability AlN/GaN double heterostructure

Solid-state electronics, 2015-11, Vol.113, p.49-53

2015

Volltextzugriff (PDF)

Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Solid-state electronics, 2012-06, Vol.72, p.15-21

2012

Volltextzugriff (PDF)

Low-Noise Microwave Performance of AIN/GaN HEMTs Grown on Silicon Substrate

IEEE electron device letters, 2011, Vol.32 (9), p.1230-1232

2011

Volltextzugriff (PDF)

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

Applied physics express, 2012-03, Vol.5 (3), p.34103

2012

Volltextzugriff (PDF)

1 – 25 von 134

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(103)
Mit Volltextzugriff
(101)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(61)
Humans
(32)
Technology
(26)
Life Sciences & Biomedicine
(25)
Male
(25)
Engineering
(24)
Engineering, Electrical & Electronic
(24)
Female
(24)
Physics
(24)
Physical Sciences
(23)
Gallium Nitride
(21)
Physics, Applied
(19)
Engineering Sciences
(18)
Adult
(16)
Biological And Medical Sciences
(16)
Middle Aged
(16)
Medical Sciences
(15)
Aluminum Gallium Nitride
(13)
Exact Sciences And Technology
(13)
Hemts
(13)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

Punch-through in short-channel AlGaN/GaN HFETs

GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

Searching for THz Gunn oscillations in GaN planar nanodiodes

Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

Thermal stability of Mo-based schottky contact for AlGaN/GaN HEMT

Photonic band gap material for integrated photonic application: technological challenges

Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design

Reliability Investigation of Gallium Nitride HEMT

High PAE high reliability AlN/GaN double heterostructure

Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Low-Noise Microwave Performance of AIN/GaN HEMTs Grown on Silicon Substrate

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

Suchergebnisse filtern