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Physical basis for high-power semiconductor nanosecond opening switches

IEEE transactions on plasma science, 2000-10, Vol.28 (5), p.1540-1544

2000

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Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC [p.sup.+]-i-[n.sup.+] Diode

Technical physics, 2018-06, Vol.63 (6), p.928

2018

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Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes)

Technical physics, 2018, Vol.63 (1), p.86-89

2018

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Electric-field dependence of electron drift velocity in 4H–SiC

Solid-state electronics, 2016-09, Vol.123, p.15-18

2016

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High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters

Technical physics, 2015-06, Vol.60 (6), p.897-902

2015

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Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation

Technical physics, 2016-02, Vol.61 (2), p.240-243

2016

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Current-voltage characteristics of high-voltage 4H-SiC [p.sup.+]-[n.sub.0]-[n.sup.+] diodes in the avalanche breakdown mode

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.374

2017

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Novel Closing Switches Based on Propagation of Fast Ionization Fronts in Semiconductors

IEEE transactions on plasma science, 2008-04, Vol.36 (2), p.378-382

2008

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IEEE_Xplore

The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode

Technical physics, 2017-12, Vol.62 (12), p.1787-1790

2017

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High-power subnanosecond silicon avalanche shaper

Technical physics, 2017-05, Vol.62 (5), p.812-815

2017

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Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

Semiconductors (Woodbury, N.Y.), 2017-04, Vol.51 (4), p.444-448

2017

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Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

Semiconductors (Woodbury, N.Y.), 2016-07, Vol.50 (7), p.883-887

2016

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Powerful diode nanosecond current opening switch made of p-silicon (p-SOS)

Technical physics, 2016-03, Vol.61 (3), p.424-427

2016

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Analysis of the process of turning off an integrated thyristor with external MOSFET control

Technical physics, 2017, Vol.62 (1), p.183-186

2017

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Investigation of the polarization dependence of the transient current in polycrystalline and epitaxial Pb[O.sub.3] thin films

Physics of the solid state, 2014-12, Vol.56 (12), p.2451

2014

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Subnanosecond 4H-SiC diode current breakers

Semiconductors (Woodbury, N.Y.), 2012-04, Vol.46 (4), p.528-531

2012

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Dynamic characteristics of 4H-SiC drift step recovery diodes

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1511-1515

2015

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Analysis of integrated thyristor switching-off by a reverse gate pulse current

Technical physics, 2017-11, Vol.62 (11), p.1684-1688

2017

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Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties

Acta physica Polonica, A, 2013-08, Vol.124 (2), p.239-243

2013

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ZnO/GaN heterostructure for LED applications

Journal of modern optics, 2009-03, Vol.56 (5), p.653-660

2009

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Effects of current localization in high-power microgate bipolar switches with nonideal interconnection between controlled cells

Technical physics, 2012-05, Vol.57 (5), p.636-643

2012

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Spreading resistance microscopy of polycrystalline and single-crystal ferroelectric films

Physics of the solid state, 2012-05, Vol.54 (5), p.1005-1007

2012

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Crack-free interface in wafer-bonded Ge/Si by patterned grooves

Scripta materialia, 2010-03, Vol.62 (6), p.407-410

2010

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Dynamic current localization during turn-off of high-power microgate bipolar switches

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1529-1536

2010

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High-power semiconductor-based nano and subnanosecond pulse Generator with a low delay time

IEEE transactions on plasma science, 2005-08, Vol.33 (4), p.1240-1244

2005

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IEEE_Xplore

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Physical basis for high-power semiconductor nanosecond opening switches

Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC [p.sup.+]-i-[n.sup.+] Diode

Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes)

Electric-field dependence of electron drift velocity in 4H–SiC

High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters

Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation

Current-voltage characteristics of high-voltage 4H-SiC [p.sup.+]-[n.sub.0]-[n.sup.+] diodes in the avalanche breakdown mode

Novel Closing Switches Based on Propagation of Fast Ionization Fronts in Semiconductors

The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode

High-power subnanosecond silicon avalanche shaper

Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

Powerful diode nanosecond current opening switch made of p-silicon (p-SOS)

Analysis of the process of turning off an integrated thyristor with external MOSFET control

Investigation of the polarization dependence of the transient current in polycrystalline and epitaxial Pb[O.sub.3] thin films

Subnanosecond 4H-SiC diode current breakers

Dynamic characteristics of 4H-SiC drift step recovery diodes

Analysis of integrated thyristor switching-off by a reverse gate pulse current

Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties

ZnO/GaN heterostructure for LED applications

Effects of current localization in high-power microgate bipolar switches with nonideal interconnection between controlled cells

Spreading resistance microscopy of polycrystalline and single-crystal ferroelectric films

Crack-free interface in wafer-bonded Ge/Si by patterned grooves

Dynamic current localization during turn-off of high-power microgate bipolar switches

High-power semiconductor-based nano and subnanosecond pulse Generator with a low delay time

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