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InN/InAlN heterostructures for new generation of fast electronics

Journal of applied physics, 2024-06, Vol.135 (24)

2024

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Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Applied physics letters, 2016-02, Vol.108 (6)

2016

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Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Applied physics letters, 2017-07, Vol.111 (3)

2017

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InN: Breaking the limits of solid-state electronics

AIP advances, 2021-12, Vol.11 (12), p.125325-125325-5

2021

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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Applied surface science, 2017-12, Vol.426, p.656-661

2017

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Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1086-1090

2015

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Current conduction mechanism and electrical break-down in InN grown on GaN

Applied physics letters, 2017-06, Vol.110 (23)

2017

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Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs

Applied surface science, 2020-10, Vol.528, p.146824, Article 146824

2020

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Applied surface science, 2018-12, Vol.461, p.255-259

2018

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Technology and application of in-situ AlOx layers on III-V semiconductors

Applied surface science, 2018-12, Vol.461, p.33-38

2018

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Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Applied surface science, 2017-02, Vol.395, p.140-144

2017

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Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

Solid-state electronics, 2008-06, Vol.52 (6), p.973-979

2008

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Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

Applied physics letters, 2021-01, Vol.118 (4)

2021

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Reduction of skin effect losses in double-level-T-gate structure

Applied physics letters, 2014-12, Vol.105 (23)

2014

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Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Semiconductor science and technology, 2016-06, Vol.31 (6), p.65011

2016

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Magnetic elements for switching magnetization magnetic force microscopy tips

Journal of magnetism and magnetic materials, 2010-09, Vol.322 (18), p.2715-2721

2010

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Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45022

2014

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Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Semiconductor science and technology, 2009-07, Vol.24 (7), p.075014-075014 (5)

2009

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Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Semiconductor science and technology, 2021-09, Vol.36 (9), p.95040

2021

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Non-uniform distribution of induced strain in a gate-recessed AlGaN GaN structure evaluated by micro-PL measurements

Semiconductor science and technology, 2012-10, Vol.27 (10), p.105008

2012

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Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

Applied physics letters, 2008-09, Vol.93 (12), p.124103

2008

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InN/InAlN heterostructures for new generation of fast electronics

Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

InN: Breaking the limits of solid-state electronics

Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Current conduction mechanism and electrical break-down in InN grown on GaN

Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Technology and application of in-situ AlOx layers on III-V semiconductors

Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

Reduction of skin effect losses in double-level-T-gate structure

Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Magnetic elements for switching magnetization magnetic force microscopy tips

Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics

Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Non-uniform distribution of induced strain in a gate-recessed AlGaN GaN structure evaluated by micro-PL measurements

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

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