UB Paderborn / Katalog / Suche / in CDI

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-03, Vol.26 (2), p.891-897

2008

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Graphene Growth on SiC and Metal Surfaces by Solid Source Carbon Deposition

MRS proceedings, 2010, Vol.1246, Article 1246-B10-02

2010

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Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Opto-electronics review, 2006-01, Vol.14 (1), p.69-75

2006

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Characterization and field emission properties of lanthanum monosulfide nanoprotrusion arrays obtained by pulsed laser deposition on self-assembled nanoporous alumina templates

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-03, Vol.25 (2), p.594-603

2007

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Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.289-292

2006

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Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Journal of electronic materials, 2001-03, Vol.30 (3), p.228-234

2001

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Field Emission from Self-Assembled Arrays of Lanthanum Monosulfide Nanoprotrusions

Journal of nanomaterials, 2008-01, Vol.2008 (1)

2008

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Growth optimization studies to develop InAs/GaInSb superlattice materials for very long wavelength infrared detection

Infrared physics & technology, 2015-05, Vol.70, p.99-102

2015

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Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells

Journal of crystal growth, 2002, Vol.234 (2-3), p.369-372

2002

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Study of the driving force for the self-assembly of heterojunction quantum dots (zero D molecules) using finite element analysis

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.C3-C3C36

2010

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Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C 60 and Si effusion cells

Journal of crystal growth, 2002, Vol.234 (2), p.369-372

2002

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Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2003-01, Vol.21 (1), p.110-115

2003

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Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

Journal of electronic materials, 2000-07, Vol.29 (7), p.906-908

2000

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Micro-raman study of the damage in nanopatterned GaAs(001)

Journal of electronic materials, 2002-10, Vol.31 (10), p.1112-1116

2002

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Einstellungen

Studies of interfacial layers between 4H-SiC (0 0 0 1) and graphene

Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection

Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry

Role of extended defected SiC interface layer on the growth of epitaxial graphene on SiC

Grain size, texture, and crystallinity in lanthanum monosulfide thin films grown by pulsed laser deposition

Exploring optimum growth for high quality InAs/GaSb type-II superlattices

Growth of short-period InAs∕GaSb superlattices

Optical and electrical quality improvements of undoped InAs∕GaSb superlattices

Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices

InAs/GaSb type-II superlattices for high performance mid-infrared detectors

Self-assembly of heterojunction quantum dots

Field emission from lanthanum monosulfide thin films grown on the (100) magnesium oxide substrates

Graphene Growth on SiC and Metal Surfaces by Solid Source Carbon Deposition

Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Characterization and field emission properties of lanthanum monosulfide nanoprotrusion arrays obtained by pulsed laser deposition on self-assembled nanoporous alumina templates

Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Field Emission from Self-Assembled Arrays of Lanthanum Monosulfide Nanoprotrusions

Growth optimization studies to develop InAs/GaInSb superlattice materials for very long wavelength infrared detection

Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells

Study of the driving force for the self-assembly of heterojunction quantum dots (zero D molecules) using finite element analysis

Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C 60 and Si effusion cells

Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy

Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

Micro-raman study of the damage in nanopatterned GaAs(001)

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