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Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4604-4616

2019

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Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2024-08, Vol.136 (8)

2024

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Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Microelectronics and reliability, 2018-08, Vol.87, p.286-320

2018

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On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.236-243

2021

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Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1056-1062

2009

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Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI

IEEE electron device letters, 2010-05, Vol.31 (5), p.411-413

2010

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An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4623-4630

2019

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Bias-temperature instability in single-layer graphene field-effect transistors

Applied physics letters, 2014-10, Vol.105 (14), p.143507

2014

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NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1662-1668

2019

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Highly-stable black phosphorus field-effect transistors with low density of oxide traps

NPJ 2D materials and applications, 2017-07, Vol.1 (1), p.1-7, Article 23

2017

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Superior NBTI in High- k SiGe Transistors–Part I: Experimental

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2092-2098

2017

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The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

2010 IEEE International Reliability Physics Symposium, 2010, p.16-25

2010

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Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs

Applied physics letters, 2017-04, Vol.110 (17)

2017

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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

NPJ 2D materials and applications, 2024-02, Vol.8 (1), p.8-7, Article 8

2024

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Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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Design and characterization of the Sandia free-piston reflected shock tunnel

Shock waves, 2023-06, Vol.33 (4), p.299-314

2023

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Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

NPJ 2D materials and applications, 2024-03, Vol.8 (1), p.23-10, Article 23

2024

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Observations of negative bias temperature instability defect generation via on the fly electron spin resonance

Applied physics letters, 2010-05, Vol.96 (22), p.223509-223509-3

2010

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Superior NBTI in High-k SiGe Transistors-Part II: Theory

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2099-2105

2017

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Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1876-1882

2009

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Origin of NBTI variability in deeply scaled pFETs

2010 IEEE International Reliability Physics Symposium, 2010, p.26-32

2010

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A review of hydrodynamic and energy-transport models for semiconductor device simulation

Proceedings of the IEEE, 2003, Vol.91 (2), p.251-274

2003

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A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.3B.1-1-3B.1-7

2024

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Similarities and Differences of BTI in SiC and Si Power MOSFETs

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-7

2020

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The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices

Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs

Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI

An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps

Bias-temperature instability in single-layer graphene field-effect transistors

NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling

Highly-stable black phosphorus field-effect transistors with low density of oxide traps

Superior NBTI in High- k SiGe Transistors–Part I: Experimental

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Design and characterization of the Sandia free-piston reflected shock tunnel

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Observations of negative bias temperature instability defect generation via on the fly electron spin resonance

Superior NBTI in High-k SiGe Transistors-Part II: Theory

Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)

Origin of NBTI variability in deeply scaled pFETs

A review of hydrodynamic and energy-transport models for semiconductor device simulation

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

Similarities and Differences of BTI in SiC and Si Power MOSFETs

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release

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