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High Mobility Strained Ge pMOSFETs With High- \kappa /Metal Gate

IEEE electron device letters, 2007-09, Vol.28 (9), p.825-827

2007

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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Semiconductor science and technology, 2004-10, Vol.19 (10), p.L106-L109

2004

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

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Investigation of the injection velocity of holes in strained Si pMOSFETs

Semiconductor science and technology, 2005-05, Vol.20 (5), p.L20-L22

2005

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Impact ionization in strained Si devices

Journal of applied physics, 2005-11, Vol.98 (10), p.104502-104502-4

2005

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Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors

Applied physics letters, 2004-12, Vol.85 (24), p.6019-6021

2004

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Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Semiconductor science and technology, 2005-08, Vol.20 (8), p.673-676, Article 673

2005

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Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates

Applied physics letters, 2007-08, Vol.91 (6), p.063127-063127-3

2007

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Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Journal of applied physics, 2001-01, Vol.89 (1), p.76-79

2001

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

Thin solid films, 2008-11, Vol.517 (1), p.17-19

2008

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

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Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1-3), p.444-448

2002

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Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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Terrace grading of SiGe for high-quality virtual substrates

Applied physics letters, 2002-12, Vol.81 (25), p.4775-4777

2002

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Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Applied physics letters, 2001-03, Vol.78 (10), p.1424-1426

2001

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Investigation of nanoscale Ge segregation in p -channel SiGe/Si field effect transistor structures by electron energy loss imaging

Journal of applied physics, 1999-12, Vol.86 (12), p.7183-7185

1999

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Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

Applied physics letters, 1999-03, Vol.74 (13), p.1848-1850

1999

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On the electron mobility enhancement in biaxially strained Si MOSFETs

Solid-state electronics, 2008-04, Vol.52 (4), p.498-505

2008

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Erratum: "Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates" [ Appl. Phys. Lett. 91 , 063127 ( 2007 ) ]

Applied physics letters, 2007-11, Vol.91 (18), p.189902-189902-1

2007

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High Mobility Strained Ge pMOSFETs With High-K/Metal Gate

IEEE electron device letters, 2007-09, Vol.28 (9), p.825-827

2007

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.1-1

2005

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On the electron mobility enhancement in biaxially strained Si MOSFETs : Ultimate integration on silicon conference 2007

Solid-state electronics, 2008, Vol.52 (4), p.498-505

2008

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High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms

Physical review. B, Condensed matter, 1999-02, Vol.59 (7), p.5097-5105

1999

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High Mobility Strained Ge pMOSFETs With High- \kappa /Metal Gate

High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

SiGe(C) epitaxial technologies—issues and prospectives

Investigation of the injection velocity of holes in strained Si pMOSFETs

Impact ionization in strained Si devices

Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors

Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates

Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Impact ionisation in strained SiGe pMOSFETs

Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Evidence of reduced self-heating in strained Si MOSFETs

Terrace grading of SiGe for high-quality virtual substrates

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Investigation of nanoscale Ge segregation in p -channel SiGe/Si field effect transistor structures by electron energy loss imaging

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

On the electron mobility enhancement in biaxially strained Si MOSFETs

Erratum: "Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates" [ Appl. Phys. Lett. 91 , 063127 ( 2007 ) ]

High Mobility Strained Ge pMOSFETs With High-K/Metal Gate

Impact ionisation in strained SiGe pMOSFETs

On the electron mobility enhancement in biaxially strained Si MOSFETs : Ultimate integration on silicon conference 2007

High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms

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