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High Mobility Strained Ge pMOSFETs With High- \kappa /Metal Gate

IEEE electron device letters, 2007-09, Vol.28 (9), p.825-827

2007

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Characterization and modeling of n-n Si∕SiC heterojunction diodes

Journal of applied physics, 2007-07, Vol.102 (1)

2007

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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Semiconductor science and technology, 2004-10, Vol.19 (10), p.L106-L109

2004

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On the causes of mass extinctions

Palaeogeography, palaeoclimatology, palaeoecology, 2017-07, Vol.478, p.3-29

2017

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How Large Igneous Provinces affect global climate, sometimes cause mass extinctions, and represent natural markers in the geological record

Palaeogeography, palaeoclimatology, palaeoecology, 2017-07, Vol.478, p.30-52

2017

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Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

Thin solid films, 2008-11, Vol.517 (1), p.17-19

2008

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

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A new correlation of Triassic–Jurassic boundary successions in NW Europe, Nevada and Peru, and the Central Atlantic Magmatic Province: A time-line for the end-Triassic mass extinction

Palaeogeography, palaeoclimatology, palaeoecology, 2017-07, Vol.478, p.80-102

2017

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Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates

Applied physics letters, 2007-08, Vol.91 (6), p.063127-063127-3

2007

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Impact ionization in strained Si devices

Journal of applied physics, 2005-11, Vol.98 (10), p.104502-104502-4

2005

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SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

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Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors

Applied physics letters, 2004-12, Vol.85 (24), p.6019-6021

2004

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Investigation of the injection velocity of holes in strained Si pMOSFETs

Semiconductor science and technology, 2005-05, Vol.20 (5), p.L20-L22

2005

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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Response of macrobenthic communities to the Toarcian Oceanic Anoxic Event in northeastern Panthalassa (Ya Ha Tinda, Alberta, Canada)

Palaeogeography, palaeoclimatology, palaeoecology, 2017-07, Vol.478, p.103-120

2017

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Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Semiconductor science and technology, 2005-08, Vol.20 (8), p.673-676, Article 673

2005

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Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Journal of applied physics, 2001-01, Vol.89 (1), p.76-79

2001

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Early to Late Maastrichtian environmental changes in the Indian Ocean compared with Tethys and South Atlantic

Palaeogeography, palaeoclimatology, palaeoecology, 2017-07, Vol.478, p.121-138

2017

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Modeling climatic effects of carbon dioxide emissions from Deccan Traps volcanic eruptions around the Cretaceous–Paleogene boundary

Palaeogeography, palaeoclimatology, palaeoecology, 2017-07, Vol.478, p.139-148

2017

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Trilobite extinctions, facies changes and the ROECE carbon isotope excursion at the Cambrian Series 2–3 boundary, Great Basin, western USA

Palaeogeography, palaeoclimatology, palaeoecology, 2017-07, Vol.478, p.53-66

2017

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A novel measurement method of segregating adlayers in MBE

Thin solid films, 2000-07, Vol.369 (1-2), p.138-142

2000

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Terrace grading of SiGe for high-quality virtual substrates

Applied physics letters, 2002-12, Vol.81 (25), p.4775-4777

2002

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Stratigraphy and paleoenvironmental analysis of the Frasnian-Famennian (Upper Devonian) boundary interval in Tioga, north-central Pennsylvania

Palaeogeography, palaeoclimatology, palaeoecology, 2017-07, Vol.478, p.67-79

2017

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High Mobility Strained Ge pMOSFETs With High- \kappa /Metal Gate

Characterization and modeling of n-n Si∕SiC heterojunction diodes

High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

On the causes of mass extinctions

How Large Igneous Provinces affect global climate, sometimes cause mass extinctions, and represent natural markers in the geological record

Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

A new correlation of Triassic–Jurassic boundary successions in NW Europe, Nevada and Peru, and the Central Atlantic Magmatic Province: A time-line for the end-Triassic mass extinction

Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates

Impact ionization in strained Si devices

SiGe(C) epitaxial technologies—issues and prospectives

Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors

Investigation of the injection velocity of holes in strained Si pMOSFETs

Impact ionisation in strained SiGe pMOSFETs

Response of macrobenthic communities to the Toarcian Oceanic Anoxic Event in northeastern Panthalassa (Ya Ha Tinda, Alberta, Canada)

Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Evidence of reduced self-heating in strained Si MOSFETs

Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Early to Late Maastrichtian environmental changes in the Indian Ocean compared with Tethys and South Atlantic

Modeling climatic effects of carbon dioxide emissions from Deccan Traps volcanic eruptions around the Cretaceous–Paleogene boundary

Trilobite extinctions, facies changes and the ROECE carbon isotope excursion at the Cambrian Series 2–3 boundary, Great Basin, western USA

A novel measurement method of segregating adlayers in MBE

Terrace grading of SiGe for high-quality virtual substrates

Stratigraphy and paleoenvironmental analysis of the Frasnian-Famennian (Upper Devonian) boundary interval in Tioga, north-central Pennsylvania

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