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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

ACS photonics, 2019-11, Vol.6 (11), p.2807-2815

2019

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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission

Scientific reports, 2023-10, Vol.13 (1), p.18515-18515, Article 18515

2023

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UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices

Optical materials express, 2019-08, Vol.9 (8), p.3277

2019

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Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition

Optical materials express, 2020-09, Vol.10 (9), p.2242

2020

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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

Applied physics letters, 2022-10, Vol.121 (17)

2022

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Electrically injected GeSn lasers on Si operating up to 100 K

Optica, 2020-08, Vol.7 (8), p.924

2020

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High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging

Journal of applied physics, 2018-07, Vol.124 (1)

2018

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Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Journal of electronic materials, 2018-08, Vol.47 (8), p.4561-4570

2018

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Crystalline GeSn growth by plasma enhanced chemical vapor deposition

Optical materials express, 2018-10, Vol.8 (10), p.3220

2018

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Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System

Frontiers in materials, 2015-04, Vol.2

2015

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In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2024-07, Vol.42 (4)

2024

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Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications

Applied surface science, 2019-07, Vol.481, p.246-254

2019

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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

Photonics research (Washington, DC), 2022-01, Vol.10 (1), p.222

2022

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Comparison study of the low temperature growth of dilute GeSn and Ge

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-11, Vol.35 (6)

2017

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Growth and characterization of low-temperature Si 1-x Sn x on Si using plasma enhanced chemical vapor deposition

Optical materials express, 2020-09, Vol.10 (9), p.2242

2020

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UHV-CVD growth of high quality GeSn using SnCl 4 : from material growth development to prototype devices

Optical materials express, 2019-08, Vol.9 (8), p.3277

2019

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Investigation of Critical Technologies of Chemical Vapor Deposition for Advanced (Si)GeSn Materials

Grant, Joshua M

2019

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Optical Characterization of Si-Based Ge^sub 1-x^Sn^sub x^ Alloys with Sn Compositions up to 12

Journal of electronic materials, 2016-04, Vol.45 (4), p.2133

2016

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Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12

Journal of electronic materials, 2016-04, Vol.45 (4), p.2133-2141

2016

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Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12

Journal of electronic materials, 2016, Vol.45 (4), p.2133-2141

2016

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Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging

2019 Conference on Lasers and Electro-Optics (CLEO), 2019, p.1-2

2019

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Systematic Study of Ge0.89Sn0.11 Photodiodes for Low-Cost Shortwave Infrared Imaging

2018 Conference on Lasers and Electro-Optics (CLEO), 2018, p.1-2

2018

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Higher critical shoulder angle increases the risk of retear after rotator cuff repair

Journal of shoulder and elbow surgery, 2017-02, Vol.26 (2), p.241-245

2017

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The K2-138 System: A Near-resonant Chain of Five Sub-Neptune Planets Discovered by Citizen Scientists

The Astronomical journal, 2018-02, Vol.155 (2), p.57

2018

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Microfluidic and Paper-Based Devices for Disease Detection and Diagnostic Research

International journal of molecular sciences, 2018-09, Vol.19 (9), p.2731

2018

Volltextzugriff (PDF)

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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission

UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices

Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition

Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

Electrically injected GeSn lasers on Si operating up to 100 K

High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Crystalline GeSn growth by plasma enhanced chemical vapor deposition

Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications

Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

Comparison study of the low temperature growth of dilute GeSn and Ge

Growth and characterization of low-temperature Si 1-x Sn x on Si using plasma enhanced chemical vapor deposition

UHV-CVD growth of high quality GeSn using SnCl 4 : from material growth development to prototype devices

Investigation of Critical Technologies of Chemical Vapor Deposition for Advanced (Si)GeSn Materials

Optical Characterization of Si-Based Ge^sub 1-x^Sn^sub x^ Alloys with Sn Compositions up to 12

Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12

Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12

Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging

Systematic Study of Ge0.89Sn0.11 Photodiodes for Low-Cost Shortwave Infrared Imaging

Higher critical shoulder angle increases the risk of retear after rotator cuff repair

The K2-138 System: A Near-resonant Chain of Five Sub-Neptune Planets Discovered by Citizen Scientists

Microfluidic and Paper-Based Devices for Disease Detection and Diagnostic Research

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