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Density control of GaN quantum dots on AlN single crystal

Applied physics letters, 2019-02, Vol.114 (8)

2019

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III-nitride photonic cavities

Nanophotonics (Berlin, Germany), 2020-03, Vol.9 (3), p.569-598

2020

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AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900–1200°C temperature range

Journal of crystal growth, 2017-10, Vol.476, p.58-63

2017

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205-GHz (Al,In)N/GaN HEMTs

IEEE electron device letters, 2010-09, Vol.31 (9), p.957-959

2010

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Room temperature polariton lasing in a GaN ∕ AlGaN multiple quantum well microcavity

Applied physics letters, 2008-08, Vol.93 (5), p.051102-051102-3

2008

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Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Applied physics letters, 2012-10, Vol.101 (15)

2012

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Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

ACS photonics, 2020-06, Vol.7 (6), p.1515-1522

2020

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Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Light, science & applications, 2022-04, Vol.11 (1), p.114-114, Article 114

2022

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A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities

Nature communications, 2018-02, Vol.9 (1), p.564-7, Article 564

2018

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Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

Journal of physical chemistry. C, 2014-10, Vol.118 (41), p.24136-24151

2014

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Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum

Optica, 2020-09, Vol.7 (9), p.1126

2020

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Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Journal of applied physics, 2018-03, Vol.123 (11)

2018

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Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon

Nano letters, 2015-02, Vol.15 (2), p.1259-1263

2015

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Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Applied physics letters, 2016-12, Vol.109 (25)

2016

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Low-temperature growth of n++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Semiconductor science and technology, 2019-01, Vol.34 (1), p.15002

2019

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Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Applied physics letters, 2018-01, Vol.112 (3)

2018

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Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Journal of applied physics, 2013-02, Vol.113 (6)

2013

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Mg doping for p -type AlInN lattice-matched to GaN

Applied physics letters, 2012-08, Vol.101 (8), p.82113

2012

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Near ultraviolet photonic integrated lasers based on silicon nitride

APL photonics, 2022-04, Vol.7 (4), p.046108-046108-7

2022

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Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2793-2801

2014

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Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory

Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (12), Article 125305

2010

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A novel class of coherent light emitters: polariton lasers

Semiconductor science and technology, 2011-01, Vol.26 (1), p.014030

2011

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Study of the epitaxial relationships between III-nitrides and M-plane sapphire

Journal of applied physics, 2010-12, Vol.108 (11), p.113521-113521-6

2010

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Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Optics express, 2014-01, Vol.22 (1), p.411-426

2014

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Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors

Applied physics letters, 2011-05, Vol.98 (18), p.181111-181111-3

2011

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Density control of GaN quantum dots on AlN single crystal

III-nitride photonic cavities

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900–1200°C temperature range

205-GHz (Al,In)N/GaN HEMTs

Room temperature polariton lasing in a GaN ∕ AlGaN multiple quantum well microcavity

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Low-temperature growth of n++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Mg doping for p -type AlInN lattice-matched to GaN

Near ultraviolet photonic integrated lasers based on silicon nitride

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory

A novel class of coherent light emitters: polariton lasers

Study of the epitaxial relationships between III-nitrides and M-plane sapphire

Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors

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