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Leveraging an electronic health record note template to standardize screening and testing for COVID-19

Healthcare : the journal of delivery science and innovation, 2020-09, Vol.8 (3), p.100454-100454, Article 100454

2020

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Acute Exercise Protects Newly Formed Motor Memories Against rTMS-induced Interference Targeting Primary Motor Cortex

Neuroscience, 2020-06, Vol.436, p.110-121

2020

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Burden of Community-Onset Escherichia coli Bacteremia in Seniors

The Journal of infectious diseases, 2005-05, Vol.191 (9), p.1523-1529

2005

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Program evaluation of the Methicillin Resistant Staphylococcus aureus (MRSA) Program at the VA Puget Sound Health Care System

Grandjean, Marcus

2012

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An outbreak of Salmonella serotype Saintpaul in a children's hospital

Infection control and hospital epidemiology, 2002-11, Vol.23 (11), p.671

2002

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205-GHz (Al,In)N/GaN HEMTs

IEEE electron device letters, 2010-09, Vol.31 (9), p.957-959

2010

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The effect of appraisal level on processing of emotional prosody in meaningless speech

NeuroImage (Orlando, Fla.), 2008-08, Vol.42 (2), p.919-927

2008

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Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

Applied physics letters, 2014-07, Vol.105 (3)

2014

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102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

IEEE electron device letters, 2009-08, Vol.30 (8), p.796-798

2009

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Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

IEEE electron device letters, 2009-10, Vol.30 (10), p.1030-1032

2009

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Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO2 or HfO2

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.937-941

2008

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Altered lateralisation of emotional prosody processing in schizophrenia

Schizophrenia research, 2009-05, Vol.110 (1), p.180-187

2009

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High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Japanese Journal of Applied Physics, 2010-06, Vol.49 (6), p.061001-061001-4

2010

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT = 144 GHz

IEEE electron device letters, 2010-04, Vol.31 (4), p.293-295

2010

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Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

Applied physics letters, 2012-12, Vol.101 (25)

2012

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High-speed and low-noise AlInN/GaN HEMTs on SiC

Physica status solidi. A, Applications and materials science, 2011-02, Vol.208 (2), p.429-433

2011

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Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

International journal of microwave and wireless technologies, 2010-02, Vol.2 (1), p.13-20

2010

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F rm T = hbox 144 Unknown character hbox GHz

IEEE electron device letters, 2010-04, Vol.31 (1-4), p.293-295

2010

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High-speed and low-noise AlInN/GaN HEMTs on SiC : Compound semiconductors

Physica status solidi. A, Applications and materials science, 2011, Vol.208 (2), p.429-433

2011

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With [Formula Omitted]

IEEE electron device letters, 2010-04, Vol.31 (4), p.293-295

2010

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Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr \hbox or Hf \hbox

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.937-941

2008

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102-GHz AIInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

IEEE electron device letters, 2009, Vol.30 (8), p.796-798

2009

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Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Jpn J Appl Phys, 2010-11, Vol.49 (11), p.116506-116506-5

2010

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Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl 4 and SF 6

Japanese Journal of Applied Physics, 2010-11, Vol.49 (11R), p.116506

2010

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Structure of assemblies of metal nanowires in mesoporous alumina membranes studied by EXAFS, XANES, X-ray diffraction and SAXS

Faraday discussions, 2004-01, Vol.125, p.327-342

2004

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Leveraging an electronic health record note template to standardize screening and testing for COVID-19

Acute Exercise Protects Newly Formed Motor Memories Against rTMS-induced Interference Targeting Primary Motor Cortex

Burden of Community-Onset Escherichia coli Bacteremia in Seniors

Program evaluation of the Methicillin Resistant Staphylococcus aureus (MRSA) Program at the VA Puget Sound Health Care System

An outbreak of Salmonella serotype Saintpaul in a children's hospital

205-GHz (Al,In)N/GaN HEMTs

The effect of appraisal level on processing of emotional prosody in meaningless speech

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO2 or HfO2

Altered lateralisation of emotional prosody processing in schizophrenia

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT = 144 GHz

Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

High-speed and low-noise AlInN/GaN HEMTs on SiC

Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F rm T = hbox 144 Unknown character hbox GHz

High-speed and low-noise AlInN/GaN HEMTs on SiC : Compound semiconductors

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With [Formula Omitted]

Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr \hbox or Hf \hbox

102-GHz AIInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl 4 and SF 6

Structure of assemblies of metal nanowires in mesoporous alumina membranes studied by EXAFS, XANES, X-ray diffraction and SAXS

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